scholarly journals Effect of Annealing on Ion Implantation Process in 4H-SiC power semiconductor devices

2021 ◽  
Vol 2033 (1) ◽  
pp. 012097
Author(s):  
Huan Ge ◽  
Rui Liu ◽  
Jialin Li
Keyword(s):  
Ion Implantation ◽  
Semiconductor Devices ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Implantation Process

The use of aluminium ion implantation for power semiconductor devices

1989 ◽  
Vol 39 (3) ◽  
pp. 406-409 ◽  
Author(s):  
E Halder ◽  
P Roggwiller ◽  
J Gobrecht
Keyword(s):  
Ion Implantation ◽  
Semiconductor Devices ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Aluminium Ion

ChemInform Abstract: Al and Ga Ion Implantation Techniques for Power Semiconductor Devices.

ChemInform ◽  
1990 ◽  
Vol 21 (43) ◽  
Author(s):  
M. WATANABE ◽  
O. ISHIWATA ◽  
S. ISHIDA ◽  
O. HASHIMOTO
Keyword(s):  
Ion Implantation ◽  
Semiconductor Devices ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Implantation Techniques

Al and Ga Ion Implantation Techniques for Power Semiconductor Devices

1990 ◽  
Vol 137 (8) ◽  
pp. 2604-2608 ◽  
Author(s):  
Masahide Watanabe ◽  
Osamu Ishiwata ◽  
Sueshige Ishida ◽  
Osamu Hashimoto
Keyword(s):  
Ion Implantation ◽  
Semiconductor Devices ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Implantation Techniques

Residual Voids in Degassing Process of Encapsulation Gel for Power Semiconductor Devices

2014 ◽  
Vol 134 (6) ◽  
pp. 432-433
Author(s):  
Masahiro Sato ◽  
Akiko Kumada ◽  
Kunihiko Hidaka ◽  
Keisuke Yamashiro ◽  
Yuji Hayase ◽  
...  
Keyword(s):  
Semiconductor Devices ◽  
Power Semiconductor ◽  
Power Semiconductor Devices
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