Preface to the Special Issue on ^|^ldquo;Current Technologies and Applications on Power Semiconductor Devices ^|^mdash;Silicon and Wide Bandgap Semiconductors^|^mdash;^|^rdquo;

2010 ◽  
Vol 130 (6) ◽  
pp. 911-911
Author(s):  
Mutsuhiro Mori
Keyword(s):  
Semiconductor Devices ◽  
Wide Bandgap ◽  
Special Issue ◽  
Wide Bandgap Semiconductors ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Bandgap Semiconductors

A Survey of Wide Bandgap Power Semiconductor Devices

2014 ◽  
Vol 29 (5) ◽  
pp. 2155-2163 ◽  
Author(s):  
Jose Millan ◽  
Philippe Godignon ◽  
Xavier Perpina ◽  
Amador Perez-Tomas ◽  
Jose Rebollo
Keyword(s):  
Semiconductor Devices ◽  
Wide Bandgap ◽  
Power Semiconductor ◽  
Power Semiconductor Devices

High-Temperature Characterization and Comparison of 1.2 kV SiC Power Semiconductor Devices

2013 ◽  
Vol 10 (4) ◽  
pp. 138-143 ◽  
Author(s):  
Christina DiMarino ◽  
Zheng Chen ◽  
Dushan Boroyevich ◽  
Rolando Burgos ◽  
Paolo Mattavelli
Keyword(s):  
High Temperature ◽  
Semiconductor Devices ◽  
Wide Bandgap ◽  
Current Gain ◽  
Dynamic Characterization ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Unbiased Manner ◽  
Insight Into

Focused on high-temperature (200°C) operation, this paper seeks to provide insight into state-of-the-art 1.2 kV silicon carbide (SiC) power semiconductor devices; namely the MOSFET, BJT, SJT, and normally-off JFET. This is accomplished by characterizing and comparing the latest generation of these wide bandgap devices from various manufacturers (Cree, GE, ROHM, Fairchild, GeneSiC, and SemiSouth). To carry out this study, the static and dynamic characterization of each device is performed under increasing temperatures (25–200°C). Accordingly, this paper describes the experimental setup used and the different measurements conducted, which include: threshold voltage, current gain, specific on-resistance, and the turn-on and turn-off switching energies of the devices. The driving method used for each device is also detailed. Key trends and observations are reported in an unbiased manner throughout the paper and summarized in the conclusion.

Modeling of Wide Bandgap Power Semiconductor Devices—Part I

2015 ◽  
Vol 62 (2) ◽  
pp. 423-433 ◽  
Author(s):  
Homer Alan Mantooth ◽  
Kang Peng ◽  
Enrico Santi ◽  
Jerry L. Hudgins
Keyword(s):  
Semiconductor Devices ◽  
Wide Bandgap ◽  
Power Semiconductor ◽  
Power Semiconductor Devices

scholarly journals Superinjection of Holes in Homojunction Diodes Based on Wide-Bandgap Semiconductors

Materials ◽  
2019 ◽  
Vol 12 (12) ◽  
pp. 1972 ◽  
Author(s):  
Igor A. Khramtsov ◽  
Dmitry Yu. Fedyanin
Keyword(s):  
High Speed ◽  
Semiconductor Devices ◽  
Data Communication ◽  
Wide Bandgap ◽  
Light Sources ◽  
Wide Bandgap Semiconductors ◽  
Wide Bandgap Semiconductor ◽  
Wide Range ◽  
Bandgap Semiconductors ◽  
P Type

Electrically driven light sources are essential in a wide range of applications, from indication and display technologies to high-speed data communication and quantum information processing. Wide-bandgap semiconductors promise to advance solid-state lighting by delivering novel light sources. However, electrical pumping of these devices is still a challenging problem. Many wide-bandgap semiconductor materials, such as SiC, GaN, AlN, ZnS, and Ga2O3, can be easily n-type doped, but their efficient p-type doping is extremely difficult. The lack of holes due to the high activation energy of acceptors greatly limits the performance and practical applicability of wide-bandgap semiconductor devices. Here, we study a novel effect which allows homojunction semiconductor devices, such as p-i-n diodes, to operate well above the limit imposed by doping of the p-type material. Using a rigorous numerical approach, we show that the density of injected holes can exceed the density of holes in the p-type injection layer by up to four orders of magnitude depending on the semiconductor material, dopant, and temperature, which gives the possibility to significantly overcome the doping problem. We present a clear physical explanation of this unexpected feature of wide-bandgap semiconductor p-i-n diodes and closely examine it in 4H-SiC, 3C-SiC, AlN, and ZnS structures. The predicted effect can be exploited to develop bright-light-emitting devices, especially electrically driven nonclassical light sources based on color centers in SiC, AlN, ZnO, and other wide-bandgap semiconductors.

High-Temperature Characterization and Comparison of 1.2 kV SiC Power Semiconductor Devices

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000082-000087 ◽  
Author(s):  
Christina DiMarino ◽  
Zheng Chen ◽  
Dushan Boroyevich ◽  
Rolando Burgos ◽  
Paolo Mattavelli
Keyword(s):  
High Temperature ◽  
Semiconductor Devices ◽  
Wide Bandgap ◽  
Current Gain ◽  
Dynamic Characterization ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Unbiased Manner ◽  
Insight Into

Focused on high-temperature (200 °C) operation, this paper seeks to provide insight into state-of-the-art 1.2 kV Silicon Carbide (SiC) power semiconductor devices; namely the MOSFET, BJT, SJT, and normally-off JFET. This is accomplished by characterizing and comparing the latest generation of these wide bandgap devices from various manufacturers (Cree, GE, Rohm, Fairchild, GeneSiC, and SemiSouth). To carry out this study, the static and dynamic characterization of each device is performed under increasing temperatures (25–200 °C). Accordingly, this paper describes the experimental setup used and the different measurements conducted, which include: threshold voltage, current gain, specific on-resistance, and the turn-on and turn-off switching energies of the devices. The driving method used for each device is also detailed. Key trends and observations are reported in an unbiased manner throughout the paper and summarized in the conclusion.

Modeling of Wide-Bandgap Power Semiconductor Devices—Part II

2015 ◽  
Vol 62 (2) ◽  
pp. 434-442 ◽  
Author(s):  
Enrico Santi ◽  
Kang Peng ◽  
Homer Alan Mantooth ◽  
Jerry L. Hudgins
Keyword(s):  
Semiconductor Devices ◽  
Wide Bandgap ◽  
Power Semiconductor ◽  
Power Semiconductor Devices
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