scholarly journals Study of Ga2O3 deposition by MOCVD

2021 ◽  
Vol 2103 (1) ◽  
pp. 012092
Author(s):  
W V Lundin ◽  
S N Rodin ◽  
A V Sakharov ◽  
M A Yagovkina ◽  
A N Smirnov ◽  
...  
Keyword(s):  
Growth Rate ◽  
Wide Temperature Range ◽  
Vapour Deposition ◽  
Flow Reactor ◽  
Chemical Vapour ◽  
Temperature Growth ◽  
Device Applications ◽  
Metalorganic Chemical Vapour Deposition ◽  
Thick Layers ◽  
Metalorganic Chemical

Abstract Growth of Ga2O3 by metalorganic chemical vapour deposition in horizontal flow reactor from trimethylgallium (TMG) and oxygen is studied in a wide temperature range. The growth rate is directly proportional to TMG flow, weakly affected by O2 flow and non-monotonically depends on temperature. Growth rate over 3 μm/h is demonstrated, indicating that TMG can be used for growth of β-Ga2O3 thick layers for device applications.

scholarly journals Growth of AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition

2010 ◽  
Vol 2010 ◽  
pp. 1-8 ◽  
Author(s):  
A. H. Ramelan ◽  
H. Harjana ◽  
P. Arifin
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
Growth Temperature ◽  
Gaas Substrate ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Flux Ratio ◽  
Metalorganic Chemical Vapour Deposition ◽  
Very High ◽  
Metalorganic Chemical

EpitaxialAlxGa1-xSb layers on GaAs substrate have been grown by atmospheric pressure metalorganic chemical vapour deposition using TMAl, TMGa, and TMSb. We report the effect of V/III flux ratio and growth temperature on growth rate, surface morphology, electrical properties, and composition analysis. A growth rate activation energy of 0.73 eV was found. For layers grown on GaAs at 580∘C and 600∘C with a V/III ratio of 3 a high quality surface morphology is typical, with a mirror-like surface and good composition control. It was found that a suitable growth temperature and V/III flux ratio was beneficial for producing good AlGaSb layers. Undoped AlGaSb grown at 580∘C with a V/III flux ratio of 3 at the rate of 3.5 μm/hour shows p-type conductivity with smooth surface morphology and its hole mobility and carrier concentration are equal to 237 cm2/V.s and 4.6 × 1017 cm-3, respectively, at 77 K. The net hole concentration of unintentionally doped AlGaSb was found to be significantly decreased with the increased of aluminium concentration. All samples investigated show oxide layers (Al2O3,Sb2O3, andGa2O5) on their surfaces. In particular the percentage of aluminium-oxide was very high compared with a small percentage of AlSb. Carbon content on the surface was also very high.

Complementary self-aligned laser by metalorganic chemical vapour deposition

1985 ◽  
Vol 21 (20) ◽  
pp. 903 ◽  
Author(s):  
L.J. Mawst ◽  
G. Costrini ◽  
C.A. Zmudzinski ◽  
M.E. Givens ◽  
M.A. Emanuel ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Metalorganic Chemical Vapour Deposition ◽  
Metalorganic Chemical

AlInAs/GaInAs heterostructure bipolar transistors grown by metalorganic chemical vapour deposition

1989 ◽  
Vol 25 (22) ◽  
pp. 1496 ◽  
Author(s):  
B. Jalali ◽  
R.N. Nottenburg ◽  
W.S. Hobson ◽  
Y.K. Chen ◽  
T. Fullowan ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Bipolar Transistors ◽  
Metalorganic Chemical Vapour Deposition ◽  
Metalorganic Chemical
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