scholarly journals Effect of Zr content on the structure and morphology of CrZrN thin films prepared by reactive DC magnetron co-sputtering method

2021 ◽  
Vol 2145 (1) ◽  
pp. 012030
Author(s):  
Adisorn Buranawong ◽  
Nirun Witit-Anun
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Structure ◽  
Zirconium Nitride ◽  
X Ray Diffraction ◽  
Sem Images ◽  
X Ray ◽  
Substrate Heating ◽  
Structure And Morphology ◽  
Microstructure Morphology

Abstract In this research, nanostructured chromium zirconium nitride (CrZrN) thin film has been deposited on Si(100) substrates by reactive DC magnetron co-sputtering method without in situ substrate heating and post-deposition annealing. The effects of Zr content on thin film structure and morphology were investigated. The Zr content in the films were varied by applied the sputtering current of Zr target (Izr) in the range of 300 to 900 mA, whereas the current of Cr target was kept at 300 mA. The crystal structure, microstructure, morphology, thickness, and chemical composition were characterized by glancing angle X-ray diffraction (GA-XRD), field emission scanning electron microscopy (FE-SEM), and energy-dispersive X-ray spectroscopy (EDS) techniques, respectively. The results showed that the increase of Izr not only increased the deposition rate, but also increased the Zr content of the as-deposited film ranging from 3.9 to 26.5 at%. The as-deposited thin films were formed as a (Cr,Zr)N solid solution, with fcc structure in (111) and (200) plane, where Cr atoms were replaced by Zr atoms in the CrN lattice. The 2θ diffraction peaks were shifted to the lower value as increase of Zr content which was obtained by increased Izr. The nanocrystalline CrZrN structure with crystal sizes smaller than 10 nm structure were calculated for as-deposited thin films. The lattice parameters increased from 4.187 to 4.381 Å, whereas the crystal size decreased from 8.3 to 6.4 nm. The FE-SEM images of all the CrZrN films exhibited compact columnar with dense morphology as a function of Zr content. Moreover, the thickness of the CrZrN thin films was increased of 302 – 421 nm.

Optical Properties of Nano-CuInSi Thin Films Prepared by Multilayer Synthesized Method

2011 ◽  
Vol 403-408 ◽  
pp. 1094-1098
Author(s):  
Jian Sheng Xie ◽  
Ping Luan ◽  
Jin Hua Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Surface ◽  
X Ray Diffraction ◽  
Sem Images ◽  
X Ray ◽  
N2 Atmosphere ◽  
Double Beam ◽  
Absorption Studies ◽  
Different Temperatures

Thin Nano-CuInSi films have been prepared by multilayer synthesized method using magnetron sputtering technology, and followed by annealing in N2 atmosphere at different temperatures. The structures of CuInSi films were detected by X-ray diffraction(XRD); X-ray diffraction studies of the annealed films indicate the presence of CuInSi, the peak of main crystal phase is at 2θ=42.450°; the morphology of the film surface was studied by SEM. The SEM images show that the crystalline of the film prepared by multilayer synthesized method was granulated. The transmittance (T) spectra of the films were measured by Shimadzu UV-2450 double beam spectrophotometer. The calculated absorption coefficient is larger than 105 cm−1 when the wavelength is shorter than 750 nm. The band gap has been estimated from the optical absorption studies and found to be about 1.47 eV, but changes with purity of CuInSi. CuInSi thin film is a potential absorber layer material applied in solar cells and photoelectric automatic control.

Influence of Sr-Doping on the Structure of LaCoO3 Thin Films Prepared by Pulsed Laser Deposition

2015 ◽  
Vol 231 ◽  
pp. 19-24 ◽  
Author(s):  
Agnieszka Kopia ◽  
Łukasz Cieniek ◽  
Kazimierz Kowalski ◽  
Jan Kusiński
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Sem Analysis ◽  
Laser Deposition ◽  
Layer Surface ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structure And Morphology

The aim of the research was to investigate the influence of strontium on the structure thin films La1-x SrxCoO3 (x=0; 0.1, 0.2). The LaCoO3 and LaCoO3 doped by Sr films were grown by pulsed laser deposition (PLD) on Si [100] substrate using an Excimer KrF (= 248 nm). To characterize the structure and morphology of the thin films were used the SEM, AFM and XRD methods. X-Ray Diffraction analysis showed only LaCoO3 phase in the thin film not doped andLa0.1Sr0.9CoO3 and La0.2Sr0.8CoO3 phases in thin films doped by Sr. The crystallites size, calculated by Williamson-Hall plots, was smaller for films doped by Sr. The surface of the thin films was free from the drops. SEM analysis showed change of the shape of thin films as a result of doping by Sr. Highly developed layer surface was observed using the AFM microscope for thin films doped by Sr.

Examination of CoNiCu thin films by using XRF and XRD

2014 ◽  
Vol 92 (5) ◽  
pp. 435-439 ◽  
Author(s):  
Ö. Söğüt ◽  
Ç. Dönük ◽  
G. Apaydın ◽  
Ö.F. Bakkaloğlu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
X Rays ◽  
X Ray Diffraction ◽  
Sem Images ◽  
X Ray ◽  
Radioisotope Source ◽  
Surface Morphologies ◽  
Xrf Spectroscopy ◽  
Fcc Structure

A series of thin films of CoNiCu and NiCu produced using the electrodeposition method have been examined using X-ray fluorescence (XRF), X-ray diffraction (XRD), and scanning electron microscopy (SEM). Energy dispersive XRF spectroscopy was used to determine the concentrations of the atomic percentage in these films. CoNiCu and NiCu thin film samples were excited by gamma rays with 59.5 keV energy photons from 100 mCi 241Am radioisotope source. K X-rays emitted by samples were counted by an Ultra-LEGe detector having a resolution of 150 eV at 5.9 keV. Structural analyses of these films have been done using the XRD technique and thin films were found to have a face-centred cubic (fcc) structure. In addition, surface morphologies of the films have been analysed by SEM. If one examines the SEM images of thin film samples, it can be seen that these elements have been homogeneously distributed in the samples of the thin films.

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

Al1-x ScxN Thin Film Structures for Pyroelectric Sensing Applications

MRS Advances ◽  
2016 ◽  
Vol 1 (39) ◽  
pp. 2711-2716 ◽  
Author(s):  
V. Vasilyev ◽  
J. Cetnar ◽  
B. Claflin ◽  
G. Grzybowski ◽  
K. Leedy ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pyroelectric Coefficient ◽  
X Ray Diffraction ◽  
Ir Detectors ◽  
Pyroelectric Properties ◽  
X Ray ◽  
Sensing Applications ◽  
Pyroelectric Material ◽  
Deposited Films

ABSTRACTAlN thin film structures have many useful and practical piezoelectric and pyroelectric properties. The potential enhancement of the AlN piezo- and pyroelectric constants allows it to compete with more commonly used materials. For example, combination of AlN with ScN leads to new structural, electronic, and mechanical characteristics, which have been reported to substantially enhance the piezoelectric coefficients in solid-solution AlN-ScN compounds, compared to a pure AlN-phase material.In our work, we demonstrate that an analogous alloying approach results in considerable enhancement of the pyroelectric properties of AlN - ScN composites. Thin films of ScN, AlN and Al1-x ScxN (x = 0 – 1.0) were deposited on silicon (004) substrates using dual reactive sputtering in Ar/N2 atmosphere from Sc and Al targets. The deposited films were studied and compared using x-ray diffraction, XPS, SEM, and pyroelectric characterization. An up to 25% enhancement was observed in the pyroelectric coefficient (Pc = 0.9 µC /m2K) for Sc1-xAlxN thin films structures in comparison to pure AlN thin films (Pc = 0.71 µC/m2K). The obtained results suggest that Al1-x ScxN films could be a promising novel pyroelectric material and might be suitable for use in uncooled IR detectors.

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

Synthesis of CaWO4:(Eu3+,Tb3+) Thin Films by a Two-Step Method at Room Temperature

2013 ◽  
Vol 710 ◽  
pp. 170-173
Author(s):  
Lian Ping Chen ◽  
Yuan Hong Gao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Composition ◽  
Room Temperature ◽  
Electrochemical Techniques ◽  
Luminescent Properties ◽  
X Ray Diffraction ◽  
Step Method ◽  
X Ray ◽  
Rare Earth Doped

It is hardly possible to obtain rare earth doped CaWO4thin films directly through electrochemical techniques. A two-step method has been proposed to synthesize CaWO4:(Eu3+,Tb3+) thin films at room temperature. X-ray diffraction, energy dispersive X-ray analysis, spectrophotometer were used to characterize their phase, composition and luminescent properties. Results reveal that (Eu3+,Tb3+)-doped CaWO4films have a tetragonal phase. When the ratio of n (Eu)/n (Tb) in the solution is up to 3:1, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Tb element; on the contrary, when the ratio in the solution is lower than 1:4, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Eu element. Under the excitation of 242 nm, sharp emission peaks at 612, 543, 489 and 589 nm have been observed for CaWO4:(Eu3+,Tb3+) thin films.

Synthesis and Characterizations of Strontium Substituted Hydroxyapatite Thin Films

2010 ◽  
Vol 93-94 ◽  
pp. 231-234
Author(s):  
B. Hongthong ◽  
Satreerat K. Hodak ◽  
Sukkaneste Tungasmita
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Composition ◽  
Spin Coating ◽  
Phase Structure ◽  
Sol Gel ◽  
Cross Linking ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sol Gel Process

Strontium substituted hydroxyapatite(SrHAp) were fabricated both in the form of powder as reference and thin film by using inorganic precursor reaction. The sol-gel process has been used for the deposition of SrHAp layer on stainless steal 316L substrate by spin coating technique, after that the films were annealed in air at various temperatures. The chemical composition of SrHAp is represented (SrxCa1-x)5(PO4)3OH, where x is equal to 0, 0.5 and 1.0. Investigations of the phase structure of SrHAp were carried out by using X-ray diffraction technique (XRD). The results showed that strontium is incorporated into hydroxyapatite where its substitution for calcium increases in the lattice parameters, and Sr3(PO4)2 can be detected at 900°C. The SEM micrographs showed that SrHAp films exhibited porous structure before develop to a cross-linking structure.

scholarly journals Structural and Electrochemical Properties of Lithium Nickel Oxide Thin Films

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Gyu-bong Cho ◽  
Tae-hoon Kwon ◽  
Tae-hyun Nam ◽  
Sun-chul Huh ◽  
Byeong-keun Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrochemical Properties ◽  
Discharge Capacity ◽  
Oxygen Deficiency ◽  
Oxide Phase ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lithium Nickel Oxide

LiNiO2thin films were fabricated by RF magnetron sputtering. The microstructure of the films was determined by X-ray diffraction and field-emission scanning electron microscopy. The electrochemical properties were investigated with a battery cycler using coin-type half-cells. The LiNiO2thin films annealed below 500°C had the surface carbonate. The results suggest that surface carbonate interrupted the Li intercalation and deintercalation during charge/discharge. Although the annealing process enhanced the crystallization of LiNiO2, the capacity did not increase. When the annealing temperature was increased to 600°C, the FeCrNiO4oxide phase was generated and the discharge capacity decreased due to an oxygen deficiency in the LiNiO2thin film. The ZrO2-coated LiNiO2thin film provided an improved discharge capacity compared to bare LiNiO2thin film suggesting that the improved electrochemical characteristic may be attributed to the inhibition of surface carbonate by ZrO2coating layer.

Formation of ZnO Doped with Mn Thin Film by Electrodeposition and Magnetic Behaviour.

2005 ◽  
Vol 879 ◽  
Author(s):  
M. Abid ◽  
C. Terrier ◽  
J-P Ansermet ◽  
K. Hjort
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Room Temperature ◽  
Magnetic Behaviour ◽  
Spectroscopic Methods ◽  
X Ray Diffraction ◽  
X Ray ◽  
Doped Zno ◽  
Mn Doped ◽  
Weak Ferromagnetic

AbstractFollowing the theory, ferromagnetism is predicted in Mn- doped ZnO, Indeed, ferromagnetism above room temperature was recently reported in thin films as well as in bulk samples made of this material. Here, we have prepared Mn doped ZnO by electrodeposition. The samples have been characterized by X-ray diffraction and spectroscopic methods to ensure that the dopants are substitutional. Some samples exhibit weak ferromagnetic properties at room temperature, however to be useful for spintronics this material need additional carriers provided by others means.

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