scholarly journals Investigation of β-Ga2O3-based HEMTs using 2D Simulations for low noise amplification and RF applications

2021 ◽  
Vol 3 (3) ◽  
pp. 035042
Author(s):  
R Singh ◽  
T R Lenka ◽  
D K Panda ◽  
H P T Nguyen
Electronics ◽  
2020 ◽  
Vol 9 (5) ◽  
pp. 786 ◽  
Author(s):  
Massimiliano Rossi ◽  
Riccardo Liberati ◽  
Marco Frasca ◽  
John Richardson

It is quite common for transceivers to operate with the RF receiver and transmitter working on different time slots. Typical applications are radars and transceivers in the field of communications. Generally, the receiver is turned off when the transmitter broadcasts and vice versa. This is done in order to prevent the transmitter from blinding the receiver or causing the RF low noise amplification (LNA) stage to saturate. When keeping a receiver active, some leakage of RF energy is inevitable, and therefore shielding is applied to mitigate spurious signals. However, there are many applications wherein the receiver cannot be turned off. To address these applications, we investigate the design and performance of a fully-analog self-jamming canceller able to operate in UHF (Ultra High Frequency) RFID devices. While the traditional cost to design and build this type of topology can be quite high, our proposal is based on a low-cost physical approach. In addition to using common SMT (Surface Mount Technology) devices, we leveraged a new piece of modular technology offered by X-Microwave which allows designers to easily produce RF solutions with a broad portfolio of modular system drop-in blocks. A prototype was realized and the measured results are in close agreement with theoretical simulations. Significant damping of the leaked signal in the receiving channel was realized.


1999 ◽  
Vol 11 (6) ◽  
pp. 650-652 ◽  
Author(s):  
M. Hofer ◽  
M.E. Fermann ◽  
A. Galvanauskas ◽  
D. Harter ◽  
R.S. Windeler

2009 ◽  
Vol 3 (1) ◽  
pp. 1-10 ◽  
Author(s):  
M. Mollazadeh ◽  
K. Murari ◽  
G. Cauwenberghs ◽  
N. Thakor

1966 ◽  
Vol 14 (12) ◽  
pp. 608-618 ◽  
Author(s):  
E. Sard ◽  
B. Peyton ◽  
S. Okwit

2010 ◽  
Author(s):  
R. C. Pooser ◽  
A. M. Marino ◽  
V. Boyer ◽  
K. M. Jones ◽  
P. D. Lett

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Walter Ciccognani ◽  
Sergio Colangeli ◽  
Claudio Verona ◽  
Fabio Di Pietrantonio ◽  
Domenico Cannatà ◽  
...  

Abstract The first realizations of S-band hybrid amplifiers based on hydrogenated-diamond (H-diamond) FETs are reported. As test vehicles of the adopted H-diamond technology at microwave frequencies, two designs are proposed: one, oriented to low-noise amplification, the other, oriented to high-power operation. The two amplifying stages are so devised as to be cascaded into a two-stage amplifier. The activities performed, from the technological steps to characterization, modelling, design and realization are illustrated. Measured performance demonstrates, for the low-noise stage, a noise figure between 7 and 8 dB in the 2–2.5 GHz bandwidth, associated with a transducer gain between 5 and 8 dB. The OIP3 at 2 GHz is 21 dBm. As to the power-oriented stage, its transducer gain is 5–6 dB in the 2–2.5 GHz bandwidth. The 1-dB output compression point at 2 GHz is 20 dBm whereas the OIP3 is 33 dBm. Cascading the measured S-parameters of the two stages yields a transducer gain of 15 ± 1.2 dB in the 2–3 GHz bandwidth.


2009 ◽  
Vol 103 (1) ◽  
Author(s):  
R. C. Pooser ◽  
A. M. Marino ◽  
V. Boyer ◽  
K. M. Jones ◽  
P. D. Lett

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