Effect of well thickness on the two-dimensional electron-hole system inAlxGa1−xSb/InAs quantum wells

1997 ◽  
Vol 55 (20) ◽  
pp. 13677-13681 ◽  
Author(s):  
Ikai Lo ◽  
Jih-Chen Chiang ◽  
Shiow-Fon Tsay ◽  
W. C. Mitchel ◽  
M. Ahoujja ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Hole

Fine structure of the emission spectrum of a two-dimensional electron–hole liquid in SiGe/Si quantum wells

JETP Letters ◽  
2016 ◽  
Vol 104 (3) ◽  
pp. 163-168 ◽  
Author(s):  
S. N. Nikolaev ◽  
V. S. Krivobok ◽  
V. S. Bagaev ◽  
E. E. Onishchenko ◽  
A. V. Novikov ◽  
...  
Keyword(s):  
Fine Structure ◽  
Emission Spectrum ◽  
Quantum Wells ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Hole

scholarly journals Спектр излучения и стабильность двух типов электронно-дырочной жидкости в мелких Si/Si-=SUB=-1-x-=/SUB=-Ge-=SUB=-x-=/SUB=-Si квантовых ямах

2020 ◽  
Vol 62 (4) ◽  
pp. 529
Author(s):  
А.А. Васильченко ◽  
В.С. Кривобок ◽  
С.Н. Николаев ◽  
В.С. Багаев ◽  
Е.Е. Онищенко ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Density Functional ◽  
Two Dimensional ◽  
Photoluminescence Spectra ◽  
Dimensional Electron ◽  
Electron Hole ◽  
Germanium Content ◽  
Well Design ◽  
Low Temperature Photoluminescence

Abstract Based on calculations within the density functional theory and an analysis of low-temperature photoluminescence spectra, the structure of electron–hole liquid in shallow Si/Si_1 – _ x Ge_ x Si (100) quantum wells 5 nm wide with germanium content x = 3–5.5% is studied. It is shown that the energy of quasi-two-dimensional electron–hole liquid localized in quantum wells for this composition range as a function of carrier concentration exhibits two local minima. The position of the deeper (major) minimum depends on the quantum well design and controls properties of quasi-two-dimensional electron–hole liquid at low temperatures. For the series of Si/Si_1 – _ x Ge_ x Si quantum wells, modification of properties of electron–hole liquid was experimentally shown, which can be interpreted as a change of the major minimum due to an increases in the germanium concentration in the Si_1 – _ x Ge_ x layer. The effect of the multicomponent composition (electrons, light and heavy holes) of the electron–hole liquid on low-temperature photoluminescence spectra of Si/Si_1 ‒ _ x Ge_ x Si quantum wells is discussed.

Two-dimensional electron-hole system in HgTe-based quantum wells with surface orientation (112)

2011 ◽  
Vol 83 (19) ◽  
Author(s):  
Z. D. Kvon ◽  
E. B. Olshanetsky ◽  
E. G. Novik ◽  
D. A. Kozlov ◽  
N. N. Mikhailov ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Surface Orientation ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Hole

Quasi-Two-Dimensional Electron–Hole Liquid in Si/SiO2 Quantum Wells

2018 ◽  
Vol 61 (3) ◽  
pp. 457-462 ◽  
Author(s):  
A. A. Vasilchenko ◽  
G. F. Kopytov
Keyword(s):  
Quantum Wells ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Hole

Quasi-Two-Dimensional Electron–Hole Liquid in Shallow SiGe/Si Quantum Wells

2018 ◽  
Vol 61 (2) ◽  
pp. 205-210 ◽  
Author(s):  
A. A. Vasilchenko ◽  
G. F. Kopytov ◽  
V. S. Krivobok
Keyword(s):  
Quantum Wells ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Hole
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