Conduction-Band Density of States in Hydrogenated Amorphous Silicon Determined by Inverse Photoemission

1984 ◽  
Vol 53 (15) ◽  
pp. 1481-1484 ◽  
Author(s):  
W. B. Jackson ◽  
S. -J. Oh ◽  
C. C. Tsai ◽  
J. W. Allen
Keyword(s):  
Amorphous Silicon ◽  
Conduction Band ◽  
Density Of States ◽  
Hydrogenated Amorphous Silicon ◽  
Inverse Photoemission ◽  
Hydrogenated Amorphous

scholarly journals Analytical Study of near Mobility Edge Density of States of Hydrogenated Amorphous Silicon

2014 ◽  
Vol 11 (3) ◽  
pp. 1243-1249
Author(s):  
Baghdad Science Journal
Keyword(s):  
Amorphous Silicon ◽  
Valence Band ◽  
Conduction Band ◽  
Density Of States ◽  
Power Law ◽  
Power Index ◽  
Hydrogenated Amorphous Silicon ◽  
Band Edge ◽  
Simple Power ◽  
Hydrogenated Amorphous

Experimental results for the density of states of hydrogenated amorphous silicon due to Jackson et al near the valence and conduction band edges were analyzed using Levenberg-Marquardt nonlinear fitting method. It is found that the density of states of the valence band and the conduction band can be fitted to a simple power law, with a power index 0.60 near the valence band edge, and 0.55 near the conduction band edge. These results indicate a modest but noticeable deviation from the square root law (power index=0.5) which is found in crystalline semiconductors. Analysis of Jackson et al density of states integral J(E) data over about (1.4 eV) of photon energy range, showed a significant fit to a simple power law with a power index of 2.11 close to that predicted from the density of states fitting results 2.15

Sign in / Sign up

Export Citation Format

Share Document