scholarly journals Single crystals of SnTe3O8 in the millimetre range grown by chemical vapor transport reactions

2021 ◽  
Vol 77 (12) ◽  
pp. 1-0
Author(s):  
Michael Ketter ◽  
Matthias Weil
Keyword(s):  
Current Model ◽  
Chemical Vapor ◽  
Chemical Vapor Transport ◽  
Site Symmetry ◽  
X Ray Diffraction ◽  
Acta Cryst ◽  
X Ray ◽  
High Degree ◽  
Degree Of Similarity ◽  
Very High

Tin(IV) trioxidotellurate(IV), SnTe3O8, is a member of the isotypic M IVTeIV 3O8 (M = Ti, Zr, Hf, Sn) series crystallizing with eight formula units per unit cell in space group Ia\overline{3}. In comparison with the previous crystal structure model of SnTe3O8 based on powder X-ray diffraction data [Meunier & Galy (1971). Acta Cryst. B27, 602–608], the current model based on single-crystal X-ray data is improved in terms of precision and accuracy. Nearly regular [SnO6] octahedra (Sn site symmetry .\overline{3}.) are situated in the voids of an oxidotellurate(IV) framework built up by corner-sharing [TeO4] bisphenoids (Te site symmetry 2..). A quantitative structural comparison revealed a very high degree of similarity for the structures with M = Ti, Zr, Sn in the M IVTe3O8 series.

Preparation of Plate-Like Bulk Beta Iron-Disilicide Crystals Using Metal to Semiconductor Phase Transition by Heat Treatment

2002 ◽  
Vol 749 ◽  
Author(s):  
Masato Osamura ◽  
Hidetaka Ishihara ◽  
Zhengxin Liu ◽  
Hisao Tanoue ◽  
Shirou. Sakuragi ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Chemical Vapor Transport ◽  
Annealing Duration ◽  
Bulk Crystals ◽  
X Ray Diffraction ◽  
X Ray ◽  
Flat Surfaces ◽  
The Matrix ◽  
The Mean ◽  
Micro Analysis

ABSTRACTPlate-like β-FeSi2 bulk crystals with size of 10×10 mm2 and thickness of 1 mm were fabricated by annealing CVT (chemical vapor transport)-grown plate-like α-Fe2Si5 at 800°C in Ar atmosphere. Before annealing, α-Fe2Si5 crystals were characterized by x-ray diffraction (XRD) and scanning electron microscopy (SEM) to be single crystals with flat surfaces. XRD measurements of β-FeSi2 crystals subjected to annealing showed that they had a po lycrystalline structure. The mean Fe/Si co mposit ion rat io of β-FeSi2 crystal measured by energy dispersive x-ray spectroscopy (EDX) was 31/69 and it was the same as that of α-Fe2Si5 bulk crystal before annealing. SEM, Raman scattering and electron probe micro-analysis (EPMA) measurements identified that there existed small Si precipitates mixed in the matrix of β-FeSi2 crystals. At annealing temperature of 800°C, the plate-like β-FeSi2 bulk was obtained even the annealing duration time was as short as 5 hours.

Synthesis and Characterization of FeO+ Nanosheets

2013 ◽  
Vol 544 ◽  
pp. 148-151 ◽  
Author(s):  
Jun Guo ◽  
Cai Xia Li ◽  
Lin Zhang ◽  
Jin Feng Xia ◽  
Danyu Jiang ◽  
...  
Keyword(s):  
Colloidal Suspension ◽  
Chemical Vapor ◽  
Butyl Alcohol ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
X Ray Diffraction ◽  
X Ray ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron

The layered FeOCl has been synthesized from Fe2O3 and FeCl3 by chemical vapor transport technique at 380°C., and an intercalation of sodium benzoate into as-synthesized FeOCl was conduct. After the intercalation composites were sonicated for 4 h in butyl alcohol, the colloidal suspension of layered iron oxide nanosheets was obtained. The FeOCl and the intercalation composites were analyzed by powder X-ray diffraction (XRD). Transmission Electron Microscopy (TEM) was also used to characterize the morphologies of the FeO+ Nanosheets. Except to this, the selected area electron diffraction was also performed to examine the iron nanosheets.

scholarly journals Surface Morphology Study of Chemical Vapor Transport of ZnO Crystals

Scanning ◽  
2018 ◽  
Vol 2018 ◽  
pp. 1-7 ◽  
Author(s):  
Long Fan ◽  
Jia Li ◽  
Dawei Yan ◽  
Liping Peng ◽  
Tao Jiang ◽  
...  
Keyword(s):  
Grown Crystal ◽  
Chemical Vapor ◽  
Optical Microscope ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
X Ray Diffraction ◽  
Vapor Interface ◽  
X Ray ◽  
Thermal Etching ◽  
Scanning Electron

A chemical vapor transport (CVT) method was implemented to grow bulk ZnO crystals. X-ray diffraction (XRD), field emission scanning electron microscopy (SEM), and optical microscope (OM) studies were carried out to characterize the surface properties of the grown crystal. The XRD result indicated the exposed solid-vapor interface of the as-grown crystal was composed of (0001) and {101-1} faces. Using SEM and OM, we observed small hexagonal pyramids and microstructures formed of crosslines on the as-grown crystal and found hexagonal thermal etching pits on the surfaces of seed crystals. The formation, evolution, and distribution mechanisms of the microstructures were investigated.

scholarly journals Crystal Growth of the Quasi-2D Quarternary Compound AgCrP2S6 by Chemical Vapor Transport

Crystals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 500
Author(s):  
Sebastian Selter ◽  
Yuliia Shemerliuk ◽  
Bernd Büchner ◽  
Saicharan Aswartham
Keyword(s):  
Crystal Growth ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
X Ray Diffraction ◽  
Monoclinic Symmetry ◽  
X Ray ◽  
Low Dimensional

We report optimized crystal growth conditions for the quarternary compound AgCrP2S6 by chemical vapor transport. Compositional and structural characterization of the obtained crystals were carried out by means of energy-dispersive X-ray spectroscopy and powder X-ray diffraction. AgCrP2S6 is structurally closely related to the M2P2S6 family, which contains several compounds that are under investigation as 2D magnets. As-grown crystals exhibit a plate-like, layered morphology as well as a hexagonal habitus. AgCrP2S6 crystallizes in monoclinic symmetry in the space group P2/a (No. 13). The successful growth of large high-quality single crystals paves the way for further investigations of low dimensional magnetism and its anisotropies in the future and may further allow for the manufacturing of few-layer (or even monolayer) samples by exfoliation.

scholarly journals PbI2 Single Crystal Growth and Its Optical Property Study

Crystals ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 589 ◽  
Author(s):  
Lin ◽  
Guo ◽  
Dai ◽  
Lin ◽  
Hsu
Keyword(s):  
Band Gap ◽  
Chemical Vapor ◽  
Band Gap Energy ◽  
Chemical Vapor Transport ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gap Energy ◽  
Photoelectric Properties ◽  
Metal Semiconductor Metal ◽  
Excitonic Transition

In this work, we used the chemical vapor transport (CVT) method to grow PbI2 crystals using iodine as a self-transporting agent. The crystals’ structure, composition, and uniformity were confirmed by X-ray diffraction (XRD) and electron probe microanalysis (EPMA) measurements. We investigated the band gap energy using absorption spectroscopy measurements. Furthermore, we explored the temperature dependence of the band gap energy, which shifts from 2.346 eV at 300 K to 2.487 eV at 20 K, and extracted the temperature coefficients. A prototype photodetector with a lateral metal–semiconductor–metal (MSM) configuration was fabricated to evaluate its photoelectric properties using a photoconductivity spectrum (PC) and persistent photoconductivity (PPC) experiments. The resonance-like PC peak indicates the excitonic transition in absorption. The photoresponse ILight/IDark-1 is up to 200%.

Composition Dependent Band Gaps of Single Crystal Cu2ZnSn(SxSe1-x)4 Solid Solutions

2012 ◽  
Vol 194 ◽  
pp. 139-143 ◽  
Author(s):  
Yi Ping Wang ◽  
Sergiu Levcenco ◽  
Dumitru O. Dumcenco ◽  
Ying Sheng Huang ◽  
Ching Hwa Ho ◽  
...  
Keyword(s):  
Solid Solutions ◽  
Chemical Vapor ◽  
Vapor Transport ◽  
Band Gaps ◽  
Chemical Vapor Transport ◽  
X Ray Diffraction ◽  
X Ray ◽  
Vegard’S Law ◽  
Diffraction Patterns ◽  
Transport Technique

Single crystals of Cu2ZnSn(SxSe1-x)4(CZTSSe) solid solutions have deen grown by chemical vapor transport technique using ICl3as a transport agent. Analyzing the X-ray diffraction patterns reveal that the as-grown CZTSSe solid solutions are crystallized in kesterite structure and the lattice parameters are determined. The S contents of the obtained crystals are estimated by Vegard’s law. The composition dependent band gaps of CZTSSe solid solutions are studied by electrolyte electroreflectance (EER) techniques. The band gaps of CZTSSe are evaluated by a lineshape fit of the EER spectra and are found to increase almost linearly with the increase of S content.

Combined Structural and Optical Assessment of CVD Grown 3C-SiC/Si

1994 ◽  
Vol 339 ◽  
Author(s):  
Z. C. Feng ◽  
C. C. Tin ◽  
K. T. Yue ◽  
R. Hu ◽  
J. Williams ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Growth Conditions ◽  
Growth Time ◽  
X Ray Diffraction ◽  
X Ray ◽  
Crystal Perfection ◽  
Cvd Growth ◽  
Torr Pressure ◽  
High Degree ◽  
Sic Films

ABSTRACTA combined structural and optical assessment of cubic (3C-) SiC thin films grown on Si (100) substrates by chemical vapor epitaxy (CVD) is presented. The CVD growth was performed at both atmospheric and low (100 Torr) pressure, using a vertical reactor. The CVD-grown 3C-SiC films with different growth time were characterized by X-ray diffraction, Raman scattering and Fourier transform infrared (FTIR) spectroscopy to be single crystalline with a high degree of crystal perfection. The film thickness was determined from FTIR spectra. Variations of X-ray, FTIR and Raman spectra with different growth conditions and film thicknesses are studied comparatively. Related problems are discussed.

Defect-Mediated Conductivity Enhancements in Na3-xPn1-xWxS4 (Pn = P, Sb) using Aliovalent Substitutions

2019 ◽  
Author(s):  
Till Fuchs ◽  
Sean Culver ◽  
Paul Till ◽  
Wolfgang Zeier
Keyword(s):  
Ionic Conductivity ◽  
Vacancy Concentration ◽  
Sodium Ion ◽  
High Ionic Conductivity ◽  
Ionic Conductors ◽  
X Ray Diffraction ◽  
X Ray ◽  
Solid State Batteries ◽  
Ion Conducting ◽  
Very High

<p>The sodium-ion conducting family of Na<sub>3</sub><i>Pn</i>S<sub>4</sub>, with <i>Pn</i> = P, Sb, have gained interest for the use in solid-state batteries due to their high ionic conductivity. However, significant improvements to the conductivity have been hampered by the lack of aliovalent dopants that can introduce vacancies into the structure. Inspired by the need for vacancy introduction into Na<sub>3</sub><i>Pn</i>S<sub>4</sub>, the solid solutions with WS<sub>4</sub><sup>2-</sup> introduction are explored. The influence of the substitution with WS<sub>4</sub><sup>2-</sup> for PS<sub>4</sub><sup>3-</sup> and SbS<sub>4</sub><sup>3-</sup>, respectively, is monitored using a combination of X-ray diffraction, Raman and impedance spectroscopy. With increasing vacancy concentration improvements resulting in a very high ionic conductivity of 13 ± 3 mS·cm<sup>-1</sup> for Na<sub>2.9</sub>P<sub>0.9</sub>W<sub>0.1</sub>S<sub>4</sub> and 41 ± 8 mS·cm<sup>-1</sup> for Na<sub>2.9</sub>Sb<sub>0.9</sub>W<sub>0.1</sub>S<sub>4</sub> can be observed. This work acts as a stepping-stone towards further engineering of ionic conductors using vacancy-injection via aliovalent substituents.</p>

Defect-Mediated Conductivity Enhancements in Na3-xPn1-xWxS4 (Pn = P, Sb) using Aliovalent Substitutions

2019 ◽  
Author(s):  
Till Fuchs ◽  
Sean Culver ◽  
Paul Till ◽  
Wolfgang Zeier
Keyword(s):  
Ionic Conductivity ◽  
Vacancy Concentration ◽  
Sodium Ion ◽  
High Ionic Conductivity ◽  
Ionic Conductors ◽  
X Ray Diffraction ◽  
X Ray ◽  
Solid State Batteries ◽  
Ion Conducting ◽  
Very High

<p>The sodium-ion conducting family of Na<sub>3</sub><i>Pn</i>S<sub>4</sub>, with <i>Pn</i> = P, Sb, have gained interest for the use in solid-state batteries due to their high ionic conductivity. However, significant improvements to the conductivity have been hampered by the lack of aliovalent dopants that can introduce vacancies into the structure. Inspired by the need for vacancy introduction into Na<sub>3</sub><i>Pn</i>S<sub>4</sub>, the solid solutions with WS<sub>4</sub><sup>2-</sup> introduction are explored. The influence of the substitution with WS<sub>4</sub><sup>2-</sup> for PS<sub>4</sub><sup>3-</sup> and SbS<sub>4</sub><sup>3-</sup>, respectively, is monitored using a combination of X-ray diffraction, Raman and impedance spectroscopy. With increasing vacancy concentration improvements resulting in a very high ionic conductivity of 13 ± 3 mS·cm<sup>-1</sup> for Na<sub>2.9</sub>P<sub>0.9</sub>W<sub>0.1</sub>S<sub>4</sub> and 41 ± 8 mS·cm<sup>-1</sup> for Na<sub>2.9</sub>Sb<sub>0.9</sub>W<sub>0.1</sub>S<sub>4</sub> can be observed. This work acts as a stepping-stone towards further engineering of ionic conductors using vacancy-injection via aliovalent substituents.</p>

ChemInform Abstract: A Study of Stress in Microwave Plasma Chemical Vapor Deposited Diamond Films Using X-Ray Diffraction.

ChemInform ◽  
2010 ◽  
Vol 28 (32) ◽  
pp. no-no
Author(s):  
M. S. HAQUE ◽  
H. A. NASEEM ◽  
A. P. MALSHE ◽  
W. D. BROWN
Keyword(s):  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Plasma Chemical ◽  
X Ray ◽  
Chemical Vapor Deposited
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