2-D-3-D crossover in single asymmetric quantum wells: investigation of the electric field and temperature effects

2000 ◽  
Vol 36 (3) ◽  
pp. 348-353 ◽  
Author(s):  
Fanyao Qu ◽  
P.C. Morais
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Temperature Effects ◽  
Asymmetric Quantum

Electric field effects on electron mobility inn-AlGaAs/GaAs/AlGaAs single asymmetric quantum wells

2002 ◽  
Vol 92 (9) ◽  
pp. 5296-5303 ◽  
Author(s):  
F. M. S. Lima ◽  
A. L. A. Fonseca ◽  
O. A. C. Nunes ◽  
Q. Fanyao
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Electron Mobility ◽  
Electric Field Effects ◽  
Field Effects ◽  
Asymmetric Quantum

Intersubband Transitions in Asymmetric Quantum Wells with External Electric Field

2014 ◽  
Vol 525 ◽  
pp. 170-176
Author(s):  
Zhao Xu Liu ◽  
Jun Zhu ◽  
Si Hua Ha
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
External Electric Field ◽  
Electric Fields ◽  
Stark Effect ◽  
Energy Levels ◽  
Intersubband Transitions ◽  
External Electric Fields ◽  
Asymmetric Quantum ◽  
Negative Field

The quantum-confined Stark effect on the optical absorption of intersubband transitions in an asymmetric AlxGa1-xN/In0.3Ga0.7N/GaN quantum wells is investigated by means of the density matrix formulism. The built-in electric field generated by the piezoelectric and spontaneous polarizations competing against to the external electric fields is considered. As the result, the influences of the built-in and external electric fields on the energy potentials and the eigen stares are discussed in detail. When the positive external electric field is applied, the peak values of the absorption coefficients from 3-2, 2-1 and 3-1 transitions are reduced and moved to the lower photon energy levels. With the negative field, the exactly opposite results can be obtained. Moreover, it is indicated that the results of the wavelengths from the 3-2, 2-1 and 3-1 transitions are reduced by the positive external electric field and increased by the negative field.

scholarly journals Optical Measurements and Theoretical Modelling of Excitons in Double ZnO/ZnMgO Quantum Wells in an Internal Electric Field

Materials ◽  
2021 ◽  
Vol 14 (23) ◽  
pp. 7222
Author(s):  
Janusz Andrzejewski ◽  
Mieczyslaw Antoni Pietrzyk ◽  
Dawid Jarosz ◽  
Adrian Kozanecki
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Optical Measurements ◽  
Theoretical Modelling ◽  
Linear Potential ◽  
Internal Electric Field ◽  
Photoluminescence Spectra ◽  
Consistent Model ◽  
Asymmetric Quantum ◽  
Different Thickness

In this paper, the photoluminescence spectra of excitons in ZnO/ZnMgO/ZnO double asymmetric quantum wells grown on a–plane Al2O3 substrates with internal electric-field bands structures were studied. In these structures, the electron and the hole in the exciton are spatially separated between neighbouring quantum wells, by a ZnMgO barrier with different thickness. The existence of an internal electric field generates a linear potential and, as a result, lowers the energy of quantum states in the well. For the wide wells, the electrons are spatially separated from the holes and can create indirect exciton. To help the understanding of the photoluminescence spectra, for single particle states the 8 k·p for wurtzite structure is employed. Using these states, the exciton in the self-consistent model with 2D hydrogenic 1s–like wave function is calculated.

The electronic states and the optical absorption for an asymmetrical quantum well applied with an external electric field

2019 ◽  
Vol 33 (26) ◽  
pp. 1950301 ◽  
Author(s):  
Yu Liu ◽  
Youbin Yu
Keyword(s):  
Optical Absorption ◽  
Iterative Method ◽  
Electric Field ◽  
Quantum Well ◽  
Quantum Wells ◽  
External Electric Field ◽  
Electronic States ◽  
Matrix Approach ◽  
Absorption Coefficients ◽  
Asymmetric Quantum

Electric field influences on the electronic states and the optical absorption in an asymmetrical quantum well with semiparabolic potential are investigated. The formula for the absorption coefficients in this asymmetrical quantum well with electric field are deduced by applying iterative method and density-matrix approach. The results are discussed with GaAs/AlGaAs materials and show that the external electric field has a significant effect on the electronic states and absorption coefficients of asymmetric quantum wells.

Bound polarons in asymmetric quantum wells in an electric field

1998 ◽  
Vol 7 (1) ◽  
pp. 28-37 ◽  
Author(s):  
Liu Zi-xin ◽  
Weng Yong-gang ◽  
Shi Jun-jie ◽  
Wang Zhi-jie ◽  
Pan Shao-hua
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Asymmetric Quantum

scholarly journals Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCB09 ◽  
Author(s):  
George M. Christian ◽  
Stefan Schulz ◽  
Simon Hammersley ◽  
Menno J. Kappers ◽  
Martin Frentrup ◽  
...  
Keyword(s):  
Optical Properties ◽  
Field Strength ◽  
Electric Field ◽  
Quantum Wells ◽  
Electric Field Strength ◽  
Single Quantum ◽  
Total Electric Field
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