Broad-band light-emitting diode for 1.4-2.0 μm using variable-composition InGaAs quantum wells

1995 ◽  
Vol 7 (11) ◽  
pp. 1270-1272 ◽  
Author(s):  
I.J. Fritz ◽  
J.F. Klem ◽  
M.J. Hafich ◽  
A.J. Howard ◽  
H.P. Hjalmarson
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diode ◽  
Broad Band ◽  
Variable Composition ◽  
Light Emitting

UV Emission Mechanisms in Quaternary AlInGaN Epilayers and Multiple Quantum Wells

2002 ◽  
Vol 722 ◽  
Author(s):  
Mee-Yi Ryu ◽  
C. Q. Chen ◽  
E. Kuokstis ◽  
J. W. Yang ◽  
G. Simin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Excitation Power ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Excitation Power Density ◽  
Light Emitting ◽  
Uv Emission ◽  
Alloy Disorder

AbstractWe present the results on investigation and analysis of photoluminescence (PL) dynamics of quaternary AlInGaN epilayers and AlInGaN/AlInGaN multiple quantum wells (MQWs) grown by a novel pulsed metalorganic chemical vapor deposition (PMOCVD). The emission peaks in both AlInGaN epilayers and MQWs show a blueshift with increasing excitation power density. The PL emission of quaternary samples is attributed to recombination of carriers/excitons localized at band-tail states. The PL decay time increases with decreasing emission photon energy, which is a characteristic of localized carrier/exciton recombination due to alloy disorder. The obtained properties of AlInGaN materials grown by a PMOCVD are similar to those of InGaN. This indicates that the AlInGaN system is promising for ultraviolet applications such as the InGaN system for blue light emitting diode and laser diode applications.

Broad-Band Superluminescent Light Emitting Diodes Incorporating Quantum Dots in Compositionally Modulated Quantum Wells

2006 ◽  
Vol 45 (4A) ◽  
pp. 2542-2545 ◽  
Author(s):  
S. K. Ray ◽  
K. M. Groom ◽  
H. Y. Liu ◽  
M. Hopkinson ◽  
R. A. Hogg
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Broad Band ◽  
Light Emitting

Colour-enhanced light emitting diode light with high gamut area for retail lighting

2015 ◽  
Vol 49 (3) ◽  
pp. 329-342 ◽  
Author(s):  
XF Feng ◽  
W Xu ◽  
QY Han ◽  
SD Zhang
Keyword(s):  
Light Source ◽  
Light Emitting Diodes ◽  
Spectral Power ◽  
Light Emitting Diode ◽  
Broad Band ◽  
Area Index ◽  
Light Emitting ◽  
High Preference ◽  
Colour Rendering ◽  
Colour Appearance

Light emitting diodes with high colour quality were investigated to enhance colour appearance and improve observers' preference for the illuminated objects. The spectral power distributions of the light emitting diodes were optimised by changing the ratios of the narrow band red, green and blue light emitting diodes, and the phosphor-converted broad-band light emitting diode to get the desired colour rendering index and high gamut area index. The influence of the light emitting diode light on different coloured fabrics was investigated. The experimental results and the statistical analysis show that by optimising the red, green, blue components the light emitting diode light can affect the colour appearance of the illuminated fabrics positively and make the fabrics appear more vivid and saturated due to the high gamut area index. Observers indicate a high preference for the colours whose saturations are enhanced. The results reveal that the colour-enhanced light emitting diode light source can better highlight products and improve visual impression over the ceramic metal halide lamp and the phosphor-converted light emitting diode light source.

Multi-Wavelength Emitting InGaN/GaN Quantum Well Grown on V-Shaped GaN(1101) Microfacet

2007 ◽  
Vol 7 (11) ◽  
pp. 4053-4056 ◽  
Author(s):  
Eun-Sil Kang ◽  
Jin-Woo Ju ◽  
Jin Soo Kim ◽  
Haeng-Keun Ahn ◽  
June Key Lee ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diode ◽  
Multiple Quantum ◽  
Continuous Change ◽  
Light Emitting ◽  
Transmission Electron ◽  
Luminescence Peak ◽  
Multi Wavelength ◽  
Upward Direction ◽  
Conventional Photolithography

InGaN/GaN multiple quantum wells (MQWs) were successfully grown on the inclined GaN(1101) microfacets. Conventional photolithography and subsequent growth of GaN were employed to generate the V-shaped microfacets along 〈1120〉 direction. The well-developed microfacets observed by scanning electron microscopy and the clear transmission electron microscope interfacial images indicated that the MQW was successfully grown on the GaN microfacets. Interestingly, cathodoluminescence (CL) spectra measured on the microfacets showed a continuous change in the luminescence peak positions. The CL peaks were shifted to a longer wavelength from 420 nm to 440 nm as the probing points were changed along upward direction. This could be attributed to the non-uniform distribution of the In composition and/or the wavefunction overlapping between adjacent wells. Present works thus propose a novel route to fabricate a monolithic white light emitting diode without phosphors by growing the InGaN/GaN MQWs on (1101) facet.

Near-infrared broad-band cavity enhanced absorption spectroscopy using a superluminescent light emitting diode

The Analyst ◽  
2009 ◽  
Vol 134 (11) ◽  
pp. 2220 ◽  
Author(s):  
W. Denzer ◽  
M. L. Hamilton ◽  
G. Hancock ◽  
M. Islam ◽  
C. E. Langley ◽  
...  
Keyword(s):  
Absorption Spectroscopy ◽  
Near Infrared ◽  
Light Emitting Diode ◽  
Broad Band ◽  
Light Emitting ◽  
Enhanced Absorption ◽  
Cavity Enhanced Absorption Spectroscopy

First Demonstration of Semipolar Deep Ultraviolet Light Emitting Diode onm-Plane Sapphire with AlGaN Multiple Quantum Wells

2010 ◽  
Vol 49 (4) ◽  
pp. 040206 ◽  
Author(s):  
Krishnan Balakrishnan ◽  
Vinod Adivarahan ◽  
Qhalid Fareed ◽  
Mohamed Lachab ◽  
Bin Zhang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emitting Diode ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Deep Ultraviolet

Photoluminescence close to V-shaped pits in the quantum wells and enhanced output power for InGaN light emitting diode

2017 ◽  
Vol 50 (47) ◽  
pp. 475103 ◽  
Author(s):  
Dan Han ◽  
Shufang Ma ◽  
Zhigang Jia ◽  
Wei Jia ◽  
Peizhi Liu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Output Power ◽  
Light Emitting Diode ◽  
Light Emitting

A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN

2008 ◽  
Vol 93 (8) ◽  
pp. 081111 ◽  
Author(s):  
C. Bayram ◽  
F. Hosseini Teherani ◽  
D. J. Rogers ◽  
M. Razeghi
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diode ◽  
Green Light ◽  
Light Emitting
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