Broad-Band Superluminescent Light Emitting Diodes Incorporating Quantum Dots in Compositionally Modulated Quantum Wells

2006 ◽  
Vol 45 (4A) ◽  
pp. 2542-2545 ◽  
Author(s):  
S. K. Ray ◽  
K. M. Groom ◽  
H. Y. Liu ◽  
M. Hopkinson ◽  
R. A. Hogg
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Broad Band ◽  
Light Emitting

Broad-band superluminescent light-emitting diodes incorporating quantum dots in compositionally modulated quantum wells

2006 ◽  
Vol 18 (1) ◽  
pp. 58-60 ◽  
Author(s):  
S.K. Ray ◽  
K.M. Groom ◽  
M.D. Beattie ◽  
H.Y. Liu ◽  
M. Hopkinson ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Broad Band ◽  
Light Emitting

Broad-band Superluminescent Light Emitting Diodes Incorporating Quantum Dots in Compositionally Modulated Quantum Wells

2005 ◽  
Author(s):  
S.K. Ray ◽  
K.M. Groom ◽  
M.D. Beattie ◽  
H.Y. Liu ◽  
M. Hopkinson ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Broad Band ◽  
Light Emitting

Broad-band superluminescent light emitting diodes incorporating quantum dots in compositionally modulated quantum wells

2006 ◽  
Author(s):  
S. K. Ray ◽  
K. M. Groom ◽  
M. D. Beattie ◽  
H. Y. Liu ◽  
M. Hopkinson ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Broad Band ◽  
Light Emitting

Time-resolved photoluminescence measurements of quantum dots in InGaN multiple quantum wells and light-emitting diodes

1999 ◽  
Vol 86 (2) ◽  
pp. 1114-1118 ◽  
Author(s):  
M. Pophristic ◽  
F. H. Long ◽  
C. Tran ◽  
I. T. Ferguson ◽  
R. F. Karlicek
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Light Emitting ◽  
Time Resolved Photoluminescence

InGaN/GaN Quantum Dot and Nanowire LEDs and Lasers

2014 ◽  
Vol 93 ◽  
pp. 270-275
Author(s):  
Pallab Bhattacharya ◽  
Thomas Frost ◽  
Animesh Banerjee ◽  
Shafat Jahangir
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Gan Nanowires ◽  
Self Organized ◽  
Gan Nanowire ◽  
Emitting Lasers ◽  
Visible Wavelengths

GaN-based InGaN/GaN self-organized quantum dots and InGaN quantum dots (disks) in GaN nanowires are important nanostructures with potential advantages over planar quantum wells, including luminescence at the longer visible wavelengths. We describe the epitaxy and characteristics of red-emitting InGaN/GaN quantum dot edge-emitting lasers and InGaN/GaN nanowire light emitting diodes, which can be used in a host of applications.

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