High efficiency data center power supply using wide band gap power devices

Author(s):  
Yutian Cui ◽  
Fan Xu ◽  
Weimin Zhang ◽  
Ben Guo ◽  
Leon M. Tolbert ◽  
...  
Author(s):  
Mengmeng Chen ◽  
Muhammad Akmal Kamarudin ◽  
Ajay K. Baranwal ◽  
Gaurav Kapil ◽  
Teresa S. Ripolles ◽  
...  

Molecules ◽  
2020 ◽  
Vol 25 (18) ◽  
pp. 4101
Author(s):  
Siyang Liu ◽  
Shuwang Yi ◽  
Peiling Qing ◽  
Weijun Li ◽  
Bin Gu ◽  
...  

The novel and appropriate molecular design for polymer donors are playing an important role in realizing high-efficiency and high stable polymer solar cells (PSCs). In this work, four conjugated polymers (PIDT-O, PIDTT-O, PIDT-S and PIDTT-S) with indacenodithiophene (IDT) and indacenodithieno [3,2-b]thiophene (IDTT) as the donor units, and alkoxy-substituted benzoxadiazole and benzothiadiazole derivatives as the acceptor units have been designed and synthesized. Taking advantages of the molecular engineering on polymer backbones, these four polymers showed differently photophysical and photovoltaic properties. They exhibited wide optical bandgaps of 1.88, 1.87, 1.89 and 1.91 eV and quite impressive hole mobilities of 6.01 × 10−4, 7.72 × 10−4, 1.83 × 10−3, and 1.29 × 10−3 cm2 V−1 s−1 for PIDT-O, PIDTT-O, PIDT-S and PIDTT-S, respectively. Through the photovoltaic test via using PIDT-O, PIDTT-O, PIDT-S and PIDTT-S as donor materials and [6,6]-phenyl-C-71-butyric acid methyl ester (PC71BM) as acceptor materials, all the PSCs presented the high open circuit voltages (Vocs) over 0.85 V, whereas the PIDT-S and PIDTT-S based devices showed higher power conversion efficiencies (PCEs) of 5.09% and 4.43%, respectively. Interestingly, the solvent vapor annealing (SVA) treatment on active layers could improve the fill factors (FFs) extensively for these four polymers. For PIDT-S and PIDTT-S, the SVA process improved the FFs exceeding 71%, and ultimately the PCEs were increased to 6.05%, and 6.12%, respectively. Therefore, this kind of wide band-gap polymers are potentially candidates as efficient electron-donating materials for constructing high-performance PSCs.


2014 ◽  
Vol 211 (9) ◽  
pp. 2063-2071 ◽  
Author(s):  
Fabrizio Roccaforte ◽  
Patrick Fiorenza ◽  
Giuseppe Greco ◽  
Raffaella Lo Nigro ◽  
Filippo Giannazzo ◽  
...  

2000 ◽  
Vol 640 ◽  
Author(s):  
Lori Lipkin ◽  
Mrinal Das ◽  
John Palmour

ABSTRACTSingle crystal SiC is a wide band-gap semiconductor with material characteristics that make it quite suitable for high voltage and high current applications. However, these devices are currently limited by their passivation. Significant improvements have been made with oxides on SiC. The most notable oxide processes are the re-oxidation anneal, a stacked ONO dielectric, and nitridation using an NO or N2O anneal. Additional improvements in lateral MOSFET mobility have been achieved using a surface channel implant, and lower temperature implant activation anneals. However, the passivation remains a significant limitation for SiC power devices.


2019 ◽  
Vol 41 (8) ◽  
pp. 315-330 ◽  
Author(s):  
Charles R. Sullivan ◽  
Di Yao ◽  
Garet Gamache ◽  
Alexander Latham ◽  
Jizheng Qiu

2014 ◽  
Vol 64 (7) ◽  
pp. 155-161
Author(s):  
L. Guo ◽  
A. Pozo Arribas ◽  
M. Krishnamurthy ◽  
K. Shenai ◽  
J. Wang

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