High-power ytterbium-doped fibre master-oscillator power-amplifier at 1018 nm

A high-power master-oscillator power-amplifier (MOPA) at 1018 nm employing ytterbium (Yb)-doped fibres as a gain medium is reported. Utilizing a diffraction grating as a reflector, we could successfully suppress the influence of the broadband amplified spontaneous emission on the master-oscillator or the power-amplifier, resulting in stable amplification of the laser signal at 1018 nm. Based on a simple theoretical simulation on gain spectra and experimental investigation on parasitic lasing thresholds, the Yb fibre MOPA constructed in-house yielded 220 W of output at 1018 nm with a beam propagation factor (M2) of 1.1. The prospects for further power scaling are considered.

Dual-Band, Dual-Output Power Amplifier Using Simplified Three-Port, Frequency-Dividing Matching Network

This study presents a dual-band power amplifier (PA) with two output ports using a simplified three-port, frequency-dividing matching network. The dual-band, dual-output PA could amplify a dual-band signal with one transistor, and the diplexer-like output matching network (OMN) divided the two bands into different output ports. A structure consisting of a λ/4 open stub and a λ/4 transmission line was applied to restrain undesired signals, which made each branch equivalent to an open circuit at another frequency. A three-stub design reduced the complexity of the OMN. Second-order harmonic impedances were tuned for better efficiency. The PA was designed with a 10-W gallium nitride high electron mobility transistor (GaN HEMT). It achieved a drain efficiency (DE) of 55.84% and 53.77%, with the corresponding output power of 40.22 and 40.77 dBm at 3.5 and 5.0 GHz, respectively. The 40%-DE bandwidths were over 200 MHz in the two bands.