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Enhancement mode gallium nitride transistor reliability
2015 IEEE Applied Power Electronics Conference and Exposition (APEC)
◽
10.1109/apec.2015.7104532
◽
2015
◽
Cited By ~ 8
Author(s):
Rob Strittmatter
◽
Chunhua Zhou
◽
Alex Lidow
◽
Yanping Ma
Keyword(s):
Gallium Nitride
◽
Enhancement Mode
◽
Transistor Reliability
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References
Enhancement mode gallium nitride transistor reliability
2015 IEEE International Reliability Physics Symposium
◽
10.1109/irps.2015.7112686
◽
2015
◽
Author(s):
Alex Lidow
◽
Rob Strittmatter
◽
Chunhua Zhou
◽
Yanping Ma
Keyword(s):
Gallium Nitride
◽
Enhancement Mode
◽
Transistor Reliability
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Download Full-text
Enhancement mode gallium nitride transistor reliability
2015 IEEE First International Conference on DC Microgrids (ICDCM)
◽
10.1109/icdcm.2015.7152052
◽
2015
◽
Cited By ~ 1
Author(s):
Alex Lidow
◽
Rob Strittmatter
Keyword(s):
Gallium Nitride
◽
Enhancement Mode
◽
Transistor Reliability
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A Comprehensive Analytical Switching Transients and Loss Modeling Approach with Accurate Parasitic Parameters for Enhancement-Mode Gallium Nitride Transistors
SAE International Journal of Electrified Vehicles
◽
10.4271/14-11-01-0010
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2021
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Vol 11
(1)
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Author(s):
James Tian
◽
Chunyan Lai
◽
Yang Luo
◽
Steven Turco
◽
Sivanagaraju Gangavarapu
◽
...
Keyword(s):
Gallium Nitride
◽
Enhancement Mode
◽
Modeling Approach
◽
Parasitic Parameters
◽
Loss Modeling
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Evaluation of gate drive overvoltage management methods for enhancement mode gallium nitride transistors
2017 IEEE Applied Power Electronics Conference and Exposition (APEC)
◽
10.1109/apec.2017.7931044
◽
2017
◽
Cited By ~ 11
Author(s):
David Reusch
◽
Michael de Rooij
Keyword(s):
Gallium Nitride
◽
Enhancement Mode
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Degradation Characteristics of Enhancement-Mode Gallium Nitride Cascoded FETs under different DC voltages
2019 3rd International Conference on Electronic Information Technology and Computer Engineering (EITCE)
◽
10.1109/eitce47263.2019.9094792
◽
2019
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Author(s):
Dongqing Hu
◽
Xiaokang Luo
◽
Xintian Zhou
Keyword(s):
Gallium Nitride
◽
Enhancement Mode
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Innovative application and driving of enhancement mode gallium nitride power transistors
10.32657/10356/73923
◽
2018
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Author(s):
◽
Aaron Qingwei Cai
Keyword(s):
Gallium Nitride
◽
Power Transistors
◽
Enhancement Mode
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Loss modeling for enhancement mode gallium nitride field efect transistor in power converter applications
IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society
◽
10.1109/iecon.2013.6700326
◽
2013
◽
Author(s):
Omair Khan
◽
Fonkwe Fongang Edwin
◽
Weidong Xiao
Keyword(s):
Gallium Nitride
◽
Power Converter
◽
Enhancement Mode
◽
Loss Modeling
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Single-Event and Radiation Effect on Enhancement Mode Gallium Nitride FETs
2014 IEEE Radiation Effects Data Workshop (REDW)
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10.1109/redw.2014.7004594
◽
2014
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Cited By ~ 11
Author(s):
A. Lidow
◽
A. Nakata
◽
M. Rearwin
◽
J. Strydom
◽
A. M. Zafrani
Keyword(s):
Gallium Nitride
◽
Radiation Effect
◽
Single Event
◽
Enhancement Mode
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Experimental characterization of enhancement mode gallium-nitride power field-effect transistors at cryogenic temperatures
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
◽
10.1109/wipda.2016.7799923
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2016
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Cited By ~ 8
Author(s):
Juan Colmenares
◽
Thomas Foulkes
◽
Christopher Barth
◽
Tomas Modeert
◽
Robert C. N. Pilawa-Podgurski
Keyword(s):
Gallium Nitride
◽
Field Effect
◽
Field Effect Transistors
◽
Cryogenic Temperatures
◽
Experimental Characterization
◽
Enhancement Mode
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Analysis and design of half-bridge gate driver for enhancement-mode gallium nitride-on-silicon HEMTs
10.14711/thesis-b1584790
◽
2016
◽
Author(s):
Ziang Chen
Keyword(s):
Gallium Nitride
◽
Analysis And Design
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Enhancement Mode
◽
Gate Driver
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