scholarly journals Innovative application and driving of enhancement mode gallium nitride power transistors

2018 ◽  
Author(s):  
◽  
Aaron Qingwei Cai
Keyword(s):  
Gallium Nitride ◽  
Power Transistors ◽  
Enhancement Mode

Enhancement mode gallium nitride transistor reliability

2015 ◽  
Author(s):  
Alex Lidow ◽  
Rob Strittmatter ◽  
Chunhua Zhou ◽  
Yanping Ma
Keyword(s):  
Gallium Nitride ◽  
Enhancement Mode ◽  
Transistor Reliability

scholarly journals Gallium Nitride Electrical Characteristics Extraction and Uniformity Sorting

2015 ◽  
Vol 2015 ◽  
pp. 1-15 ◽  
Author(s):  
Shyr-Long Jeng ◽  
Chih-Chiang Wu ◽  
Wei-Hua Chieng
Keyword(s):  
Gallium Nitride ◽  
Equivalent Circuit ◽  
Field Effect Transistors ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Electrical Characteristics ◽  
Electrical Measurements ◽  
Power Transistors ◽  
High Power Output ◽  
The Difference

This study examined the output electrical characteristics—current-voltage (I-V) output, threshold voltage, and parasitic capacitance—of novel gallium nitride (GaN) power transistors. Experimental measurements revealed that both enhanced- and depletion-mode GaN field-effect transistors (FETs) containing different components of identical specifications yielded varied turn-off impedance; hence, the FET quality was inconsistent. Establishing standardized electrical measurements can provide necessary information for designers, and measuring transistor electrical characteristics establishes its equivalent-circuit model for circuit simulations. Moreover, high power output requires multiple parallel power transistors, and sorting the difference between similar electrical characteristics is critical in a power system. An isolated gate driver detection method is proposed for sorting the uniformity from the option of the turn-off characteristic. In addition, an equivalent-circuit model for GaN FETs is established on the basis of the measured electrical characteristics and verified experimentally.

Displacement Damage Testing of the Intersil ISL70023SEH and ISL70024SEH Gallium Nitride Power Transistors

2017 ◽  
Author(s):  
N. W. van Vonno ◽  
O. Mansilla ◽  
J. S. Gill ◽  
W. H. Newman ◽  
L. G. Pearce ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Displacement Damage ◽  
Power Transistors
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