Asymmetric Gate Stack Surrounding gate Transistor (ASYMGAS SGT): 2-D Analytical Threshold Voltage Model

2007 Asia-Pacific Microwave Conference ◽

10.1109/apmc.2007.4554710 ◽

2007 ◽

Author(s):

Harsupreet Kaur ◽

Sneha Kabra ◽

R.S. Gupta ◽

Subhasis Haldar

Keyword(s):

Threshold Voltage ◽

Surrounding Gate ◽

Threshold Voltage Model

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An analytical threshold voltage model for graded channel asymmetric gate stack (GCASYMGAS) surrounding gate MOSFET

Solid-State Electronics ◽

10.1016/j.sse.2007.09.006 ◽

2008 ◽

Vol 52 (2) ◽

pp. 305-311 ◽

Author(s):

Harsupreet Kaur ◽

Sneha Kabra ◽

Subhasis Haldar ◽

R.S. Gupta

Keyword(s):

Threshold Voltage ◽

Surrounding Gate ◽

Threshold Voltage Model

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Threshold voltage model of junctionless cylindrical surrounding gate MOSFETs including fringing field effects

Superlattices and Microstructures ◽

10.1016/j.spmi.2015.09.001 ◽

2015 ◽

Vol 88 ◽

pp. 188-197 ◽

Author(s):

Santosh Kumar Gupta

Keyword(s):

Threshold Voltage ◽

Field Effects ◽

Surrounding Gate ◽

Fringing Field ◽

Threshold Voltage Model

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Analytical Threshold Voltage Model Including Effective Conducting Path Effect (ECPE) for Surrounding-Gate MOSFETs (SGMOSFETs) With Localized Charges

IEEE Transactions on Electron Devices ◽

10.1109/ted.2010.2066278 ◽

2010 ◽

Vol 57 (11) ◽

pp. 3176-3180 ◽

Author(s):

Yun Seop Yu ◽

Namki Cho ◽

Sung Woo Hwang ◽

Doyeol Ahn

Keyword(s):

Threshold Voltage ◽

Conducting Path ◽

Surrounding Gate ◽

Threshold Voltage Model

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A New Quasi-2-D Threshold Voltage Model for Short-Channel Junctionless Cylindrical Surrounding Gate (JLCSG) MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2012.2212904 ◽

2012 ◽

Vol 59 (11) ◽

pp. 3127-3129 ◽

Author(s):

Te-Kuang Chiang

Keyword(s):

Threshold Voltage ◽

Short Channel ◽

Surrounding Gate ◽

Threshold Voltage Model

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The short-channel threshold voltage model for junctionless surrounding-gate MOSFETs

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology ◽

10.1109/icsict.2012.6466738 ◽

2012 ◽

Author(s):

T. K. Chiang ◽

D. H. Chang

Keyword(s):

Threshold Voltage ◽

Short Channel ◽

Surrounding Gate ◽

Threshold Voltage Model

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A Compact Analytical Threshold-Voltage Model for Surrounding-Gate MOSFETs With Interface Trapped Charges

IEEE Electron Device Letters ◽

10.1109/led.2010.2051317 ◽

2010 ◽

Vol 31 (8) ◽

pp. 788-790 ◽

Author(s):

Chiang Te-Kuang

Keyword(s):

Threshold Voltage ◽

Surrounding Gate ◽

Threshold Voltage Model

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A new two-dimensional threshold voltage model for cylindrical, fully-depleted, surrounding-gate (SG) MOSFETs

Microelectronics Reliability ◽

10.1016/j.microrel.2006.05.016 ◽

2007 ◽

Vol 47 (2-3) ◽

pp. 379-383 ◽

Author(s):

T.K. Chiang

Keyword(s):

Threshold Voltage ◽

Two Dimensional ◽

Fully Depleted ◽

Surrounding Gate ◽

Threshold Voltage Model

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A threshold voltage model for the surrounding-gate MOSFETs

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ◽

10.1109/icsict.2010.5667783 ◽

2010 ◽

Author(s):

Guanghui Mei ◽

Guangxi Hu ◽

Peicheng Li ◽

Jinglun Gu ◽

Ran Liu ◽

...

Keyword(s):

Threshold Voltage ◽

Surrounding Gate ◽

Threshold Voltage Model

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A New Two-Dimensional Analytical Threshold Voltage Model for Short-Channel Triple-Material Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.054301 ◽

2012 ◽

Vol 51 ◽

pp. 054301 ◽

Author(s):

Hsin-Kai Wang ◽

Sean Wu ◽

Te-Kuang Chiang ◽

Maw-Shung Lee

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Short Channel ◽

Surrounding Gate ◽

Threshold Voltage Model

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New analytical threshold voltage model for halo-doped cylindrical surrounding-gate MOSFETs

Journal of Semiconductors ◽

10.1088/1674-4926/32/7/074002 ◽

2011 ◽

Vol 32 (7) ◽

pp. 074002 ◽

Author(s):

Cong Li ◽

Yiqi Zhuang ◽

Ru Han

Keyword(s):

Threshold Voltage ◽

Surrounding Gate ◽

Threshold Voltage Model

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