High efficiency single-inductor dual-output DC-DC converter with ZVS-PWM control

Author(s):  
Yoshiki Sunaga ◽  
Naoya Shiraishi ◽  
Koyo Asaishi ◽  
Nobukazu Tsukiji ◽  
Yasunori Kobori ◽  
...  
Keyword(s):  
2011 ◽  
Vol 383-390 ◽  
pp. 5771-5777
Author(s):  
Yu Quan Ma ◽  
Li Hong Zhang ◽  
Shu Fen Han ◽  
Zhi Peng Lin

The constant voltage power supply with dual directional reversible PWM compensation has merits of high precision, high efficiency, small volume, and so on. To ensure the quality of supply, it is important to fix the value of inductance, capacitance in main circuit. From the angle of filtering, and through analysis of the circuit working, detailed formulas of the inductance and capacitance calculation are given and an example of it is given too. In parameters calculation, to reduce the volume, the filter inductance is taken a smaller value but the capacitance is taken a greater value; the DC smoothing capacitance should be chosen according to the amplitude limit of DC voltage rising in inversion, and should be taken as great as possible to maintain voltage stabilizing precision.


2012 ◽  
Vol 482-484 ◽  
pp. 3-10
Author(s):  
Guo Hua Xu ◽  
Ying Zhang ◽  
Ming Dong ◽  
Qing De Meng

A high efficiency switch-mode power amplifier based on a cascaded multicell multilevel circuit topology is introduced in the paper. A multicell topology being operated in a unipolar phase-shifted PWM control to switch-mode amplifier system is introduced. After analysising a single-phase H-bridge unipolar PWM inverter’s output, the paper emphasis on the researching of the output of a Cascaded Multilevel Class-D Power Amplifier. The paper analyzes the advanced characteristic of the cascaded multilevel technique. Then a cascaded multilevel class-D power amplifier is built in the laboratory. The result of measurement shows a good following performance and stability.


1988 ◽  
Vol 102 ◽  
pp. 41
Author(s):  
E. Silver ◽  
C. Hailey ◽  
S. Labov ◽  
N. Madden ◽  
D. Landis ◽  
...  

The merits of microcalorimetry below 1°K for high resolution spectroscopy has become widely recognized on theoretical grounds. By combining the high efficiency, broadband spectral sensitivity of traditional photoelectric detectors with the high resolution capabilities characteristic of dispersive spectrometers, the microcalorimeter could potentially revolutionize spectroscopic measurements of astrophysical and laboratory plasmas. In actuality, however, the performance of prototype instruments has fallen short of theoretical predictions and practical detectors are still unavailable for use as laboratory and space-based instruments. These issues are currently being addressed by the new collaborative initiative between LLNL, LBL, U.C.I., U.C.B., and U.C.D.. Microcalorimeters of various types are being developed and tested at temperatures of 1.4, 0.3, and 0.1°K. These include monolithic devices made from NTD Germanium and composite configurations using sapphire substrates with temperature sensors fabricated from NTD Germanium, evaporative films of Germanium-Gold alloy, or material with superconducting transition edges. A new approache to low noise pulse counting electronics has been developed that allows the ultimate speed of the device to be determined solely by the detector thermal response and geometry. Our laboratory studies of the thermal and resistive properties of these and other candidate materials should enable us to characterize the pulse shape and subsequently predict the ultimate performance. We are building a compact adiabatic demagnetization refrigerator for conveniently reaching 0.1°K in the laboratory and for use in future satellite-borne missions. A description of this instrument together with results from our most recent experiments will be presented.


Author(s):  
J. M. Cowley ◽  
R. Glaisher ◽  
J. A. Lin ◽  
H.-J. Ou

Some of the most important applications of STEM depend on the variety of imaging and diffraction made possible by the versatility of the detector system and the serial nature, of the image acquisition. A special detector system, previously described, has been added to our STEM instrument to allow us to take full advantage of this versatility. In this, the diffraction pattern in the detector plane may be formed on either of two phosphor screens, one with P47 (very fast) phosphor and the other with P20 (high efficiency) phosphor. The light from the phosphor is conveyed through a fiber-optic rod to an image intensifier and TV system and may be photographed, recorded on videotape, or stored digitally on a frame store. The P47 screen has a hole through it to allow electrons to enter a Gatan EELS spectrometer. Recently a modified SEM detector has been added so that high resolution (10Å) imaging with secondary electrons may be used in conjunction with other modes.


Author(s):  
K.M. Hones ◽  
P. Sheldon ◽  
B.G. Yacobi ◽  
A. Mason

There is increasing interest in growing epitaxial GaAs on Si substrates. Such a device structure would allow low-cost substrates to be used for high-efficiency cascade- junction solar cells. However, high-defect densities may result from the large lattice mismatch (∼4%) between the GaAs epilayer and the silicon substrate. These defects can act as nonradiative recombination centers that can degrade the optical and electrical properties of the epitaxially grown GaAs. For this reason, it is important to optimize epilayer growth conditions in order to minimize resulting dislocation densities. The purpose of this paper is to provide an indication of the quality of the epitaxially grown GaAs layers by using transmission electron microscopy (TEM) to examine dislocation type and density as a function of various growth conditions. In this study an intermediate Ge layer was used to avoid nucleation difficulties observed for GaAs growth directly on Si substrates. GaAs/Ge epilayers were grown by molecular beam epitaxy (MBE) on Si substrates in a manner similar to that described previously.


Author(s):  
P. G. Kotula ◽  
D. D. Erickson ◽  
C. B. Carter

High-resolution field-emission-gun scanning electron microscopy (FESEM) has recently emerged as an extremely powerful method for characterizing the micro- or nanostructure of materials. The development of high efficiency backscattered-electron detectors has increased the resolution attainable with backscattered-electrons to almost that attainable with secondary-electrons. This increased resolution allows backscattered-electron imaging to be utilized to study materials once possible only by TEM. In addition to providing quantitative information, such as critical dimensions, SEM is more statistically representative. That is, the amount of material that can be sampled with SEM for a given measurement is many orders of magnitude greater than that with TEM.In the present work, a Hitachi S-900 FESEM (operating at 5kV) equipped with a high-resolution backscattered electron detector, has been used to study the α-Fe2O3 enhanced or seeded solid-state phase transformations of sol-gel alumina and solid-state reactions in the NiO/α-Al2O3 system. In both cases, a thin-film cross-section approach has been developed to facilitate the investigation. Specifically, the FESEM allows transformed- or reaction-layer thicknesses along interfaces that are millimeters in length to be measured with a resolution of better than 10nm.


Author(s):  
Yaru Li ◽  
Yu-Quan Zhu ◽  
Weili Xin ◽  
Song Hong ◽  
Xiaoying Zhao ◽  
...  

Rationally designing low-content and high-efficiency noble metal nanodots offers opportunities to enhance electrocatalytic performances for water splitting. However, the preparation of highly dispersed nanodots electrocatalysts remains a challenge. Herein, we...


1919 ◽  
Vol 88 (2282supp) ◽  
pp. 204-205
Author(s):  
Frank E. D. Acland
Keyword(s):  

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