Temperature dependent actuation voltage for longer MEMS switch lifetime

Low insertion loss, high isolation RF MEM switches have been thought of as one of the most attractive devices for space-based reconfigurable antenna and integrated circuit applications. Many RF MEMS switch topologies have been reported and they all show superior RF characteristics compared to semiconductor-based counterparts. At the University of Illinois, we developed state-of-the-art broadband low-voltage RF MEM switches using cantilever and hinged topologies. We demonstrated promisingsub-10volts operation for both switch topologies.The switches have an insertion loss of less than 0:1 dB, and an isolation of better than 25 dB over the frequency range from 0.25 to 40 GHz. The RF Model of the MEM switch was also established. The low voltage RF MEM switches will provide a solution for low voltage and highly linear switching methods for the next generation of broadband RF, microwave, and millimeter-wave circuits.

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Automated and Optimal Actuation Voltage Waveform Design for Contact Bouncing Mitigation of MEMS Switches

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.609-610.1248 ◽

2014 ◽

Vol 609-610 ◽

pp. 1248-1253

Author(s):

Chen Xu Zhao ◽

Xin Guo ◽

Tao Deng ◽

Ling Li ◽

Ze Wen Liu

Keyword(s):

Actuation Voltage ◽

Waveform Design ◽

Practical Case ◽

Voltage Waveform ◽

Mems Switches ◽

Mems Switch ◽

Simulation Based ◽

Speed Up ◽

Bouncing Effect

This paper presents an efficient methodology for automated optimal tailoring actuation voltage waveform of MEMS switches aiming at eliminating the detrimental contact bouncing effect to speed up the switching process and improve the mechanical reliability. This is a simulation-based approach where genetic algorithm (GA) is used in combination with a dedicated mechanical model of MEMS switch to derive optimal actuation waveform. The proposed technique has been implemented in SystemC-A, which is extremely well suited for complex modeling, implementation of post-processing of simulation results and optimization algorithms. Effectiveness of proposed approach is corroborated by a practical case study of automated actuation waveform design for a prefabricated DC-contact MEMS switch. The experimental results show that the switching time of the switch by employing optimized actuation voltage waveform is dramatically reduced to 60μs from 95μs, while the bouncing effect is successfully eliminated.

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Low Actuation Voltage Capacitive Shunt RF-MEMS Switch Having a Corrugated Bridge

IEICE Transactions on Electronics ◽

10.1093/ietele/e89-c.12.1880 ◽

2006 ◽

Vol E89-C (12) ◽

pp. 1880-1887 ◽

Cited By ~ 5

Author(s):

Y.-T. SONG ◽

H.-Y. LEE ◽

M. ESASHI

Keyword(s):

Rf Mems ◽

Actuation Voltage ◽

Rf Mems Switch ◽

Mems Switch

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Dynamic Study of a Capacitive MEMS Switch with Double Clamped-Clamped Microbeams

Shock and Vibration ◽

10.1155/2014/807489 ◽

2014 ◽

Vol 2014 ◽

pp. 1-7 ◽

Cited By ~ 10

Author(s):

Hatem Samaali ◽

Fehmi Najar ◽

Slim Choura

Keyword(s):

Transmission Line ◽

Electrostatic Force ◽

Equations Of Motion ◽

Actuation Voltage ◽

Transient Behavior ◽

Mems Switch ◽

Grid Points ◽

Capacitive Mems ◽

Better Than ◽

Rf Performances

We study a capacitive MEMS switch composed of two clamped-clamped exible microbeams. We first develop a mathematical model for the MEMS switch where the upper microbeam represents the ground transmission line and the lower one represents the central transmission line. An electrostatic force is applied between the two microbeams to yield the switch to its ON and OFF states. We derive the equations of motion of the system and associated boundary conditions and solve the static and dynamic problems using the differential quadratic method. We show that using only nine grid points gives relatively accurate results when compared to those obtained using FEM. We also examine the transient behavior of the microswitch and obtain results indicating that subsequent reduction in actuation voltage, switching time, and power consumption are expected along with relatively good RF performances. ANSYS HFSS simulator is used in this paper to extract the RF characteristics of the microswitch. HFSS simulation results show that the insertion loss is as low as −0.31 dB and that the return loss is better than −12.41 dB at 10 GHz in the ON state. At the OFF state, the isolation is lower than −23 dB in the range of 10 to 50 GHz.

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