Design and Fabrication of a Ka Band RF MEMS Switch with High Capacitance Ratio and Low Actuation Voltage

In this paper a high capacitance ratio and low actuation voltage RF MEMS switch is designed and fabricated for Ka band RF front-ends application. The metal-insulator-metal (MIM) capacitors is employed on a signal line to improve the capacitance ratio, which will not degrade the switch reliability. To reduce the actuation voltage, a low spring constant bending folding beam and bilateral drop-down electrodes are designed in the MEMS switch. The paper analyzes the switch pull-in model and deduces the elastic coefficient calculation equation, which is consistent with the simulation results. The measured results indicated that, for the proposed MEMS switch with a gap of 2 μm, the insertion loss is better than −0.5 dB and the isolation is more than −20 dB from 25 to 35 GHz with an actuation voltage of 15.8 V. From the fitted results, the up-state capacitance is 6.5 fF, down-state capacitance is 4.3 pF, and capacitance ratios is 162. Compared with traditional MEMS capacitive switches with dielectric material Si3N4, the proposed MEMS switch exhibits high on/off capacitance ratios of 162 and low actuation voltage.

High-performance inline RF MEMS switch for application in 5G mobile networks

This article presents the results of the design and analysis of a radio-frequency switch made using microelectromechanical systems technology. The device is the capacitive switch with a hybrid type of contact, in which the movable electrode of the structure – the metal membrane is part of the microwave signal line of the coplanar waveguide. The switch design is characterized by a high capacitance ratio and low contact resistance. The zig-zag elastic suspension is used to reduce the value of the pull-down voltage – 2 V and the switching time ∼ 7 us. The central resonant frequency of the switch is 3.8 GHz. In this case, in the open state, the value of the insertion loss is not more than -0.2 dB and the isolation value in the close state is not less than -55 dB. The effective frequency range is the S-band, as well as the C-, X- and Ku-band, in which the isolation value is at least -30 dB. The presented inline RF MEMS switch is suitable for use in various types of ground and satellite communications, in particular for devices and systems of 5G mobile networks.

Design, Evaluation and Analysis of a Novel H-Shaped Capacitive RF MEMS Switch

In this paper, absolute evaluation of Radio Frequency Micro Electromechanical System (RF MEMS) to improve parameters like high actuation voltage and low switching time, by introducing a new fixed - fixed RF MEMS capacitive switch. The proposed switch designed step-by-step evaluation of the plane beam, a novel structure of beam, and deposit the perforations and meanders to reducethe pull-in voltage. All the RF MEMS switch design parameters arestudy using the COMSOL Multiphysics FEM (Finite Element Model) tool. The proposed RF MEMS switch express low pull-in voltageof 4.75V and good return, insertion, and isolation losses in both upstate and downstate conditions are >10dB, below 0.1dB and 60dB, respectively. The dielectric layer as silicon nitride (Si3N4), beam as a gold material. The RLC values are extracted by using lumped model design. The RF MEMS shunt switch (capacitance, inductance, and resistance) of the MEMS bridge are accurately evaluated from the S-parameter analysis. The computational and simulated results are good agreement with each other, which indicates the validity of the proposed switch for K (18-26) GHz band applications.

Erratum: Zhu, Y.; Pal, J. Low-Voltage and High-Reliability RF MEMS Switch with Combined Electrothermal and Electrostatic Actuation. Micromachines 2021, 12, 1237

The authors would like to update the Figure 3 and Figure 7 to the published paper [...]