Influence of Spacer Thickness on the Optical Properties of Vertically Stacked InP/AlGaInP Quantum Dot Lasers at the Short Wavelength

2019 ◽  
Author(s):  
Zhihua Huang ◽  
Stefan Hepp ◽  
Robert Sittig ◽  
Michael Jetter ◽  
Peter Michler
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Short Wavelength ◽  
Quantum Dot Lasers ◽  
Spacer Thickness

Effects of Spacer Thickness on the Performance of InGaAs/GaAs Quantum Dot Lasers

2000 ◽  
Vol 642 ◽  
Author(s):  
Nien-Tze Yeh ◽  
Wei-Shen Liu ◽  
Shu-Han Chen ◽  
Jen-Inn Chyi
Keyword(s):  
Quantum Dot ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Characteristic Temperature ◽  
Threshold Current ◽  
Inhomogeneous Broadening ◽  
Quantum Dot Lasers ◽  
Low Threshold ◽  
Spacer Thickness ◽  
Gaas Quantum Dot

ABSTRACTIt is found that the performance of self-assembled In0.5Ga0.5As/GaAs multi-stack quantum dot lasers is sensitive to the GaAs spacer thickness between the dots. Reducing the spacer thickness from 30 nm to 10 nm leads to narrow photoluminescence linewidth, low threshold current, high characteristic temperature and high internal quantum efficiency. This behavior is attributed to inhomogeneous broadening caused by dot size fluctuation related to spacer thickness.

Influences of GaAs Spacer Thickness on the Optical Properties of InAs/GaAs Quantum Dot Molecule

2017 ◽  
Vol 46 (8) ◽  
pp. 816002
Author(s):  
刘瑶 LIU Yao ◽  
王颖 WANG Ying ◽  
郭庆林 GUO Qing-lin ◽  
李晓莉 LI Xiao-li ◽  
梁宝来 LIANG Bao-lai ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Spacer Thickness ◽  
Gaas Quantum Dot

InP / AlGaInP short wavelength quantum dot lasers

2008 ◽  
Author(s):  
P. M. Smowton ◽  
M. Al-Ghamdi ◽  
S.N. Elliott ◽  
G. Edwards ◽  
P. Blood ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Short Wavelength ◽  
Quantum Dot Lasers

Short-Wavelength (760–920 nm) AlGaInAs Quantum Dot Lasers

2009 ◽  
Vol 15 (3) ◽  
pp. 792-798 ◽  
Author(s):  
Thomas W. Schlereth ◽  
Christian Schneider ◽  
Sven Gerhard ◽  
Sven Hofling ◽  
Alfred Forchel
Keyword(s):  
Quantum Dot ◽  
Short Wavelength ◽  
Quantum Dot Lasers

High-Performance Short-Wavelength ($\sim$760 nm) AlGaInAs Quantum-Dot Lasers

2007 ◽  
Vol 19 (18) ◽  
pp. 1380-1382 ◽  
Author(s):  
T.W. Schlereth ◽  
S.. Gerhard ◽  
W.. Kaiser ◽  
S.. Hofling ◽  
A.. Forchel
Keyword(s):  
Quantum Dot ◽  
Short Wavelength ◽  
High Performance ◽  
Quantum Dot Lasers

MAGNETIC FIELD, PRESSURE AND TEMPERATURE DEPENDENT OPTICAL PROPERTIES IN A GaAs 9.0 P 1.0 QUANTUM DOT

2014 ◽  
Vol 6 (2) ◽  
pp. 1178-1190
Author(s):  
A. JOHN PETER ◽  
Ada Vinolin
Keyword(s):  
Magnetic Field ◽  
Optical Properties ◽  
Quantum Dot ◽  
Field Strength ◽  
Magnetic Field Strength ◽  
Photon Energy ◽  
Nonlinear Optical ◽  
Binding Energies ◽  
Nonlinear Optical Properties ◽  
Optical Rectification

Simultaneous effects of magnetic field, pressure and temperature on the exciton binding energies are found in a 9.0 1.0 6.0 4.0 GaAs P / GaAs P quantum dot. Numerical calculations are carried out taking into consideration of spatial confinement effect. The cylindrical system is taken in the present problem with the strain effects. The electronic properties and the optical properties are found with the combined effects of magnetic field strength, hydrostatic pressure and temperature values. The exciton binding energies and the nonlinear optical properties are carried out taking into consideration of geometrical confinement and the external perturbations.Compact density approach is employed to obtain the nonlinear optical properties. The optical rectification coefficient is obtained with the photon energy in the presence of pressure, temperature and external magnetic field strength. Pressure and temperature dependence on nonlinear optical susceptibilities of generation of second and third order harmonics as a function of incident photon energy are brought out in the influence of magnetic field strength. The result shows that the electronic and nonlinear optical properties are significantly modified by the applications of external perturbations in a 9.0 1.0 6.0 4.0 GaAs P / GaAs P quantum dot.

Modeling of carrier dynamics in InGaAs/GaAs self-assembled quantum dot lasers

2016 ◽  
Vol 55 (8) ◽  
pp. 2042 ◽  
Author(s):  
M. Kashiri ◽  
A. Asgari
Keyword(s):  
Quantum Dot ◽  
Carrier Dynamics ◽  
Quantum Dot Lasers ◽  
Self Assembled
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