Characterisation of solid-phase-epitaxy of amorphous germanium thin-films

COMMAD 2012 ◽  
2012 ◽  
Author(s):  
M. Leong ◽  
J. C. McCallum ◽  
K. K. Lee ◽  
G. Impellizzeri ◽  
L. Romano
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Germanium

In situ excimer laser irradiation as cleaning tool for solid phase epitaxy of laser crystallized polycrystalline silicon thin films

2013 ◽  
Vol 210 (12) ◽  
pp. 2729-2735 ◽  
Author(s):  
Ingmar Höger ◽  
Thomas Schmidt ◽  
Anja Landgraf ◽  
Martin Schade ◽  
Annett Gawlik ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Silicon Thin Films ◽  
Excimer Laser Irradiation

Solid phase epitaxy of ferrimagnetic Y3Fe5O12 garnet thin films

2008 ◽  
Vol 93 (9) ◽  
pp. 092505 ◽  
Author(s):  
Y. Krockenberger ◽  
H. Matsui ◽  
T. Hasegawa ◽  
M. Kawasaki ◽  
Y. Tokura
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Solid Phase Epitaxy

Fabrication of heteroepitaxial thin films of layered oxychalcogenides LnCuOCh (Ln = La–Nd; Ch = S–Te) by reactive solid-phase epitaxy

2004 ◽  
Vol 19 (7) ◽  
pp. 2137-2143 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Kazushige Ueda ◽  
Kouhei Takafuji ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Epitaxial Films ◽  
Annealing Process ◽  
Epitaxial Thin Films ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Preparation Conditions ◽  
Thermal Annealing Process

Processes and preparation conditions for growing epitaxial thin films of Cu-based, layered oxychalcogenides LnCuOCh (Ln = La, Ce, Pr or Nd; Ch = S1-xSex or Se1-yTey) are reported. Epitaxial thin films on MgO (001) substrates were prepared by a reactive solid-phase epitaxy method. Four-axes high-resolution x-ray diffraction measurements revealed that the crystallographic orientation is (001)[110] LnCuOCh || (001)[110] MgO and the internal stress of the crystalline lattices in the films are relaxed during thermal-annealing process of the reactive solid-phase epitaxy. Furthermore, except for CeCuOS, systematic variations in the lattice constant by chalcogen or lanthanide ion substitutions were observed. These results demonstrated that the reactive solid-phase epitaxy is an efficient technique for fabricating LnCuOCh epitaxial films.

Solid phase epitaxy of EuTiO3 thin films on SrTiO3 (100) substrates with different oxygen contents

2013 ◽  
Vol 378 ◽  
pp. 243-245 ◽  
Author(s):  
K. Shimamoto ◽  
Y. Hirose ◽  
S. Nakao ◽  
T. Fukumura ◽  
T. Hasegawa
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Solid Phase Epitaxy

Growth of silicon thin films on erbium silicide by solid phase epitaxy

1994 ◽  
Vol 75 (1) ◽  
pp. 223-226 ◽  
Author(s):  
J.‐Y. Veuillen ◽  
C. d’Anterroches ◽  
T. A. Nguyen Tan
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Silicon Thin Films

Heteroepitaxial Bi2Sr2CaCu2Ox Superconducting thin films Deposited on LaA1O3 by Solid Phase Epitaxy and OMCVD

1992 ◽  
Vol 275 ◽  
Author(s):  
J. Chen ◽  
H. A. Lu ◽  
F. DiMeo ◽  
B. W. Wessels ◽  
D. L. Schulz ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Superconducting Thin Films ◽  
Epitaxial Thin Films ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Film Substrate

ABSTRACT-Heteroepitaxial superconducting Bi,Sr2CaCu2Ox (BSCCO 2212) thin films have been formed by solid phase epitaxy from amorphous films deposited on (100) LaA1O3 single crystal substrates by organometallic chemical vapor deposition. The epitaxial structure of the film is confirmed by x-ray diffraction including θ/2θ and Φ (in plane rotation) scans. Cross-sectional high resolution transmission electron microscopy indicates that the film-substrate interface is nearly atomically abrupt. Improvements in superconducting properties of the epitaxial thin films are noted in comparison to highly textured films deposited on MgO.

Growth of Ru2Si3 Polycrystalline Thin Films by Solid Phase Epitaxy in Ru-Si Amorphous Layers

2018 ◽  
Vol 386 ◽  
pp. 33-37 ◽  
Author(s):  
Kenta Setojima ◽  
Syuya Ikeda ◽  
Kazuya Ogi ◽  
Yoshikazu Terai
Keyword(s):  
Thin Films ◽  
Electron Density ◽  
Solid Phase ◽  
High Mobility ◽  
Solid Phase Epitaxy ◽  
Si Substrates ◽  
Polycrystalline Thin Films ◽  
Ruthenium Silicide

Semiconducting ruthenium silicide (Ru2Si3) polycrystalline thin films were grown by solid phase epitaxy using Ru-Si amorphous layers on Si substrates. The formation of Ru2Si3 phase was confirmed by XRD and Raman measurements when the amorphous layers were annealed at 600−900 °C in a vacuum. The Ru2Si3 thin films showed a low electron density of 1 × 1016 cm-3 with a high mobility of 430−940 cm2V-1s-1. Photoluminescence (PL) at ~0.8 eV was observed in the Ru2Si3 films.

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