2009 second international workshop on compact thin-film transistor (TFT) modeling for circuit simulation

2009 ◽  
Keyword(s):  
Thin Film ◽  
Circuit Simulation ◽  
International Workshop ◽  
Thin Film Transistor ◽  
Second International

A New Device Model of Amorphous Silicon Thin-Film Transistor for Circuit Simulation

1991 ◽  
Vol 219 ◽  
Author(s):  
Hong S. Choi ◽  
Jin S. Park ◽  
Chang H. Oh ◽  
In S. Joo ◽  
Yong S. Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Analytical Model ◽  
Circuit Simulation ◽  
Thin Film Transistor ◽  
Drain Current ◽  
Channel Length ◽  
Silicon Thin Film ◽  
New Device ◽  
Circuit Simulator

ABSTRACTWe present a new analytical model of amorphous silicon thin-film transistor (a-Si TFT) suitable for circuit simulators such as SPICE. The effects of localized gap state distributions of a-Si as well as temperatures on the a-Si TFT performances have been fully considered in the presented model. The parameters used in SPICE, such as transconductance, channel-length modulation, and power factor of source-drain current, are evaluated from the measured current-voltage and capacitance-voltage characteristics by employing the proposed extraction method. It has been found out that the analytical model is in good agreement with experimental data at both room temperature and elevated temperature and successfully implemented in a widely used circuit simulator.

Sign in / Sign up

Export Citation Format

Share Document