Ferromagnet-semiconductor hybrid Hall effect device

2002 ◽  
Author(s):  
M. Johnson ◽  
B.R. Bennett
Keyword(s):  
Hall Effect

HALL EFFECT IN SILVER - RARE EARTH AMORPHOUS ALLOYS

1980 ◽  
Vol 41 (C8) ◽  
pp. C8-467-C8-469 ◽  
Author(s):  
R. Asomoza ◽  
J. B. Bieri ◽  
A. Fert ◽  
B. Boucher ◽  
J. C. Ousset
Keyword(s):  
Rare Earth ◽  
Hall Effect ◽  
Amorphous Alloys

The Hall effect and its analogs

2015 ◽  
Vol 185 (5) ◽  
pp. 479-488 ◽  
Author(s):  
Aleksandr F. Barabanov ◽  
Yurii M. Kagan ◽  
Leonid A. Maksimov ◽  
Andrey V. Mikheyenkov ◽  
Tatyana V. Khabarova
Keyword(s):  
Hall Effect

Position and Speed Estimation Methods of SPMSMs using a Hall Effect Sensor

2008 ◽  
Vol 128 (2) ◽  
pp. 125-130
Author(s):  
Kan Akatsu ◽  
Nobuhiro Mitomo ◽  
Shinji Wakui
Keyword(s):  
Hall Effect ◽  
Estimation Methods ◽  
Speed Estimation ◽  
Hall Effect Sensor

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

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