Electrical characterization of epitaxial silicon deposited at low temperatures by plasma-enhanced chemical vapor deposition

IEEE Electron Device Letters ◽

10.1109/edl.1985.26263 ◽

1985 ◽

Vol 6 (12) ◽

pp. 652-654 ◽

Author(s):

W.R. Burger ◽

R. Reif

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Low Temperatures ◽

Electrical Characterization ◽

Chemical Vapor ◽

Epitaxial Silicon

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Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures (450-600℃)

10.7567/ssdm.2006.i-8-4 ◽

2006 ◽

Author(s):

Naotaka Tawara ◽

Hiromasa Ohmi ◽

Yoshikazu Terai ◽

Hiroaki Kakiuchi ◽

Heiji Watanabe ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Low Temperatures ◽

Atmospheric Pressure Plasma ◽

Chemical Vapor ◽

Epitaxial Silicon ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition

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Characterization of Undoped, N- and P-Type Hydrogenated Nanocrystalline Silicon Carbide Films Deposited by Hot-Wire Chemical Vapor Deposition at Low Temperatures

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.1415 ◽

2007 ◽

Vol 46 (4A) ◽

pp. 1415-1426 ◽

Author(s):

Shinsuke Miyajima ◽

Akira Yamada ◽

Makoto Konagai

Keyword(s):

Silicon Carbide ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Low Temperatures ◽

Chemical Vapor ◽

Nanocrystalline Silicon ◽

Hot Wire ◽

Nanocrystalline Silicon Carbide ◽

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Cross-sectional TEM characterization of low temperature (750-800°C) epitaxial silicon by very low pressure (6 mTorr) chemical vapor deposition with and without plasma enhancement

Journal of Electronic Materials ◽

10.1007/bf02652144 ◽

1988 ◽

Vol 17 (2) ◽

pp. 139-148 ◽

Author(s):

T. R. Yew ◽

J. H. Comfort ◽

L. M. Garverick ◽

W. R. Burger ◽

R. Reif

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Epitaxial Silicon ◽

Cross Sectional ◽

Tem Characterization ◽

Plasma Enhancement

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Electrical characterization of Si-doped conductive AlInN films grown nearly lattice-matched to c-plane GaN on sapphire by metalorganic chemical vapor deposition

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/6.0000284 ◽

2020 ◽

Vol 38 (5) ◽

pp. 052205

Author(s):

Makoto Miyoshi ◽

Taiki Nakabayashi ◽

Mizuki Yamanaka ◽

Takashi Egawa ◽

Tetsuya Takeuchi

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Electrical Characterization ◽

Chemical Vapor ◽

Si Doped ◽

Lattice Matched ◽

Metalorganic Chemical

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Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation

IEICE Transactions on Electronics ◽

10.1093/ietele/e88-c.4.640 ◽

2005 ◽

Vol E88-C (4) ◽

pp. 640-645 ◽

Author(s):

H. MURAKAMI

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Gate Dielectrics ◽

Electrical Characterization ◽

Chemical Vapor ◽

Layer By Layer ◽

Aluminum Oxynitride ◽

Thermal Nitridation

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Current induced annealing and electrical characterization of single layer graphene grown by chemical vapor deposition for future interconnects in VLSI circuits

Applied Physics Letters ◽

10.1063/1.4895802 ◽

2014 ◽

Vol 105 (11) ◽

pp. 113513 ◽

Author(s):

Neetu Prasad ◽

Anita Kumari ◽

P. K. Bhatnagar ◽

P. C. Mathur ◽

C. S. Bhatia

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Electrical Characterization ◽

Single Layer ◽

Chemical Vapor ◽

Vlsi Circuits ◽

Single Layer Graphene ◽

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Electrical characterization of Si-donor-related shallow and deep states in InGaAlP alloys grown by metalorganic chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/0022-0248(91)90793-5 ◽

1991 ◽

Vol 115 (1-4) ◽

pp. 498-503 ◽

Author(s):

Mariko Suzuki ◽

Masayuki Ishikawa ◽

Kazuhiko Itaya ◽

Yukie Nishikawa ◽

Gen-ichi Hatakoshi ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Electrical Characterization ◽

Chemical Vapor ◽

Metalorganic Chemical

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Electrical Characterization of Ti–Silicate Films Grown by Atomic Layer Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.5259 ◽

2007 ◽

Vol 46 (8A) ◽

pp. 5259-5263 ◽

Author(s):

Seungjae Lee ◽

Kijung Yong

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Electrical Characterization ◽

Chemical Vapor ◽

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Plasma‐enhanced chemical vapor deposition ofinsitudoped epitaxial silicon at low temperatures. I. Arsenic doping

Journal of Applied Physics ◽

10.1063/1.343040 ◽

1989 ◽

Vol 65 (3) ◽

pp. 1053-1066 ◽

Author(s):

James H. Comfort ◽

Rafael Reif

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Low Temperatures ◽

Chemical Vapor ◽

Epitaxial Silicon ◽

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Characterization of SrBi2Ta2O9 ferroelectric thin films deposited at low temperatures by plasma-enhanced metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.119475 ◽

1997 ◽

Vol 71 (1) ◽

pp. 81-83 ◽

Author(s):

Nak-Jin Seong ◽

Soon-Gil Yoon ◽

Seaung-Suk Lee

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Low Temperatures ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Ferroelectric Thin Films ◽

Metalorganic Chemical

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