Characterization of Undoped, N- and P-Type Hydrogenated Nanocrystalline Silicon Carbide Films Deposited by Hot-Wire Chemical Vapor Deposition at Low Temperatures

2007 ◽  
Vol 46 (4A) ◽  
pp. 1415-1426 ◽  
Author(s):  
Shinsuke Miyajima ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Low Temperatures ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Hot Wire ◽  
Nanocrystalline Silicon Carbide ◽  
P Type

Hot-wire chemical vapor deposition and characterization of p-type nanocrystalline SiC films and their use in Si heterojunction solar cells

2012 ◽  
Vol 520 (6) ◽  
pp. 2110-2114 ◽  
Author(s):  
Hsin-Yuan Mao ◽  
Dong-Sing Wuu ◽  
Bing-Rui Wu ◽  
Shih-Yung Lo ◽  
Hsin-Yu Hsieh ◽  
...  
Keyword(s):  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Heterojunction Solar Cells ◽  
P Type ◽  
Sic Films

Hot-wire chemical vapor deposition and characterization of p-type nanocrystalline Si films for thin film photovoltaic applications

2012 ◽  
Vol 520 (16) ◽  
pp. 5200-5205 ◽  
Author(s):  
Hsin-Yuan Mao ◽  
Shih-Yung Lo ◽  
Dong-Sing Wuu ◽  
Bing-Rui Wu ◽  
Sin-Liang Ou ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Photovoltaic Applications ◽  
Si Films ◽  
P Type ◽  
Nanocrystalline Si

scholarly journals The Growth of Homo-Epitaxial Silicon at Low Temperatures Using Hot Wire Chemical Vapor Deposition

1999 ◽  
Vol 570 ◽  
Author(s):  
J. Thiesen ◽  
K.M. Jones ◽  
R. Matson ◽  
R. Reedy ◽  
E. Iwaniczko ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Low Temperatures ◽  
Ion Beam ◽  
Chemical Vapor ◽  
High Growth ◽  
Epitaxial Silicon ◽  
Hot Wire ◽  
Transmission Electron ◽  
P Type

ABSTRACTWe report on the first known growth of high-quality epitaxial Si via the hot wire chemical vapor deposition (HWCVD) method. This method yields epitaxial Si at the comparatively low temperatures of 195° to 450°C, and relatively high growth rates of 3 to 20 Å/sec. Layers up to 4500-Å thick have been grown. These epitaxial layers have been characterized by transmission electron microscopy (TEM), indicating large regions of nearly perfect atomic registration. Electron channeling patterns (ECPs) generated on a scanning electron microscope (SEM) have been used to characterize, as well as optimize the growth process. Electron beam induced current (EBIC) characterization has also been performed, indicating defect densities as low as 8×104/cm2. Secondary ion beam mass spectrometry (SIMS) data shows that these layers have reasonable impurity levels within the constraints of our current deposition system. Both n and p-type layers were grown, and p/n diodes have been fabricated.

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