Low switching losses devices architectures for power management applications integrated in a low cost 0.13μm CMOS technology

AbstractAchieving high-performance p-type semiconductors has been considered one of the most challenging tasks for three-dimensional vertically integrated nanoelectronics. Although many candidates have been presented to date, the facile and scalable realization of high-mobility p-channel field-effect transistors (FETs) is still elusive. Here, we report a high-performance p-channel tellurium (Te) FET fabricated through physical vapor deposition at room temperature. A growth route involving Te deposition by sputtering, oxidation and subsequent reduction to an elemental Te film through alumina encapsulation allows the resulting p-channel FET to exhibit a high field-effect mobility of 30.9 cm2 V−1 s−1 and an ION/OFF ratio of 5.8 × 105 with 4-inch wafer-scale integrity on a SiO2/Si substrate. Complementary metal-oxide semiconductor (CMOS) inverters using In-Ga-Zn-O and 4-nm-thick Te channels show a remarkably high gain of ~75.2 and great noise margins at small supply voltage of 3 V. We believe that this low-cost and high-performance Te layer can pave the way for future CMOS technology enabling monolithic three-dimensional integration.

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A 0.65V embedded SDRAM with smart boosting and power management in a 45nm CMOS technology

Proceedings of the IEEE 2012 Custom Integrated Circuits Conference ◽

10.1109/cicc.2012.6330622 ◽

2012 ◽

Author(s):

Suk-Soo Pyo ◽

Jun-Sung Kim ◽

Jung-Han Kim ◽

Hyun-Taek Jung ◽

Tae-Joong Song ◽

...

Keyword(s):

Power Management ◽

Cmos Technology

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Fabrication of a CMOS-based Imaging Chip with Monolithically Integrated RGB and NIR Filters

Proceedings ◽

10.3390/proceedings2130751 ◽

2019 ◽

Vol 2 (13) ◽

pp. 751

Author(s):

Bart Vereecke ◽

Els Van Besien ◽

Deniz Sabuncuoglu Tezcan ◽

Nick Spooren ◽

Nicolaas Tack ◽

...

Keyword(s):

Bandpass Filter ◽

Imaging System ◽

Low Cost ◽

Cmos Technology ◽

Image Sensors ◽

Single Chip ◽

Interference Filters ◽

Monolithically Integrated ◽

Recent Developments

Recent developments in multispectral cameras have demonstrated how compact and low-cost spectral sensors can be made by monolithically integrating filters on top of commercially available image sensors. In this paper, the fabrication of a RGB + NIR variation to such a single-chip imaging system is described, including the integration of a metallic shield to minimize crosstalk, and two interference filters: a NIR blocking filter, and a NIR bandpass filter. This is then combined with standard polymer based RGB colour filters. Fabrication of this chip is done in imec’s 200 mm cleanroom using standard CMOS technology, except for the addition of RGB colour filters and microlenses, which is outsourced.

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Impact of Fluid Flow on CMOS-MEMS Resonators Oriented to Gas Sensing

Sensors ◽

10.3390/s20174663 ◽

2020 ◽

Vol 20 (17) ◽

pp. 4663

Author(s):

Rafel Perello-Roig ◽

Jaume Verd ◽

Sebastià Bota ◽

Jaume Segura

Keyword(s):

Fluid Flow ◽

Gas Sensing ◽

Low Cost ◽

Cmos Technology ◽

Monolithically Integrated ◽

Impact Reduction ◽

Mems Resonators ◽

Cmos Mems ◽

Outstanding Result ◽

The Impact

Based on experimental data, this paper thoroughly investigates the impact of a gas fluid flow on the behavior of a MEMS resonator specifically oriented to gas sensing. It is demonstrated that the gas stream action itself modifies the device resonance frequency in a way that depends on the resonator clamp shape with a corresponding non-negligible impact on the gravimetric sensor resolution. Results indicate that such an effect must be accounted when designing MEMS resonators with potential applications in the detection of volatile organic compounds (VOCs). In addition, the impact of thermal perturbations was also investigated. Two types of four-anchored CMOS-MEMS plate resonators were designed and fabricated: one with straight anchors, while the other was sustained through folded flexure clamps. The mechanical structures were monolithically integrated together with an embedded readout amplifier to operate as a self-sustained fully integrated oscillator on a commercial CMOS technology, featuring low-cost batch production and easy integration. The folded flexure anchor resonator provided a flow impact reduction of 5× compared to the straight anchor resonator, while the temperature sensitivity was enhanced to −115 ppm/°C, an outstanding result compared to the −2403 ppm/°C measured for the straight anchored structure.

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Lead Selenide Polycrystalline Coatings Sensitized Using Diffusion and Ion Beam Methods for Uncooled Mid-Infrared Photodetection

Coatings ◽

10.3390/coatings8120444 ◽

2018 ◽

Vol 8 (12) ◽

pp. 444 ◽

Cited By ~ 5

Author(s):

Hao Yang ◽

Xiaojiang Li ◽

Guodong Wang ◽

Jianbang Zheng

Keyword(s):

High Speed ◽

Large Scale ◽

Low Cost ◽

Ion Beam ◽

Lead Selenide ◽

Cmos Technology ◽

Oxide Semiconductor ◽

Recombination Suppression ◽

Mid Infrared ◽

Physical Effects

Polycrystalline lead selenide material that is processed after a sensitization technology offers the additional physical effects of carrier recombination suppression and carrier transport manipulation, making it sufficiently sensitive to mid-infrared radiation at room temperature. Low-cost and large-scale integration with existing electronic platforms such as complementary metal–oxide–semiconductor (CMOS) technology and multi-pixel readout electronics enable a photodetector based on polycrystalline lead selenide coating to work in high-speed, low-cost, and low-power consumption applications. It also shows huge potential to compound with other materials or structures, such as the metasurface for novel optoelectronic devices and more marvelous properties. Here, we provide an overview and evaluation of the preparations, physical effects, properties, and potential applications, as well as the optoelectronic enhancement mechanism, of lead selenide polycrystalline coatings.

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Idleness-Aware Dynamic Power Mode Selection on the i.MX 7ULP IoT Edge Processor

Journal of Low Power Electronics and Applications ◽

10.3390/jlpea10020019 ◽

2020 ◽

Vol 10 (2) ◽

pp. 19

Author(s):

Alfio Di Mauro ◽

Hamed Fatemi ◽

Jose Pineda de Gyvez ◽

Luca Benini

Keyword(s):

Power Consumption ◽

Power Management ◽

Management Strategy ◽

Low Cost ◽

Mode Selection ◽

Worst Case ◽

Dynamic Power ◽

Dynamic Tuning ◽

Power Management Strategy ◽

Power Mode

Power management is a crucial concern in micro-controller platforms for the Internet of Things (IoT) edge. Many applications present a variable and difficult to predict workload profile, usually driven by external inputs. The dynamic tuning of power consumption to the application requirements is indeed a viable approach to save energy. In this paper, we propose the implementation of a power management strategy for a novel low-cost low-power heterogeneous dual-core SoC for IoT edge fabricated in 28 nm FD-SOI technology. Ss with more complex power management policies implemented on high-end application processors, we propose a power management strategy where the power mode is dynamically selected to ensure user-specified target idleness. We demonstrate that the dynamic power mode selection introduced by our power manager allows achieving more than 43% power consumption reduction with respect to static worst-case power mode selection, without any significant penalty in the performance of a running application.

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A 4.0 GHz 291 Mb Voltage-Scalable SRAM Design in a 32 nm High-k + Metal-Gate CMOS Technology With Integrated Power Management

IEEE Journal of Solid-State Circuits ◽

10.1109/jssc.2009.2034082 ◽

2010 ◽

Vol 45 (1) ◽

pp. 103-110 ◽

Cited By ~ 32

Author(s):

Yih Wang ◽

Uddalak Bhattacharya ◽

Fatih Hamzaoglu ◽

Pramod Kolar ◽

Yong-Gee Ng ◽

...

Keyword(s):

Power Management ◽

Cmos Technology ◽

Metal Gate ◽

High K ◽

Sram Design

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