Growth of high-quality semiconducting tellurium films for high-performance p-channel field-effect transistors with wafer-scale uniformity

Achieving high-performance p-type semiconductors has been considered one of the most challenging tasks for three-dimensional vertically integrated nanoelectronics. Although many candidates have been presented to date, the facile and scalable realization of high-mobility p-channel field-effect transistors (FETs) is still elusive. Here, we report a high-performance p-channel tellurium (Te) FET fabricated through physical vapor deposition at room temperature. A growth route involving Te deposition by sputtering, oxidation and subsequent reduction to an elemental Te film through alumina encapsulation allows the resulting p-channel FET to exhibit a high field-effect mobility of 30.9 cm2 V−1 s−1 and an ION/OFF ratio of 5.8 × 105 with 4-inch wafer-scale integrity on a SiO2/Si substrate. Complementary metal-oxide semiconductor (CMOS) inverters using In-Ga-Zn-O and 4-nm-thick Te channels show a remarkably high gain of ~75.2 and great noise margins at small supply voltage of 3 V. We believe that this low-cost and high-performance Te layer can pave the way for future CMOS technology enabling monolithic three-dimensional integration.

Field canalization using anisotropic 2D plasmonics

Optical devices capable of suppressing diffraction nature of light are of great technological importance to many nanophotonic applications. One important technique to achieve diffractionless optics is to exploit field canalization effect. However, current technological platforms based on metamaterial structures typically suffer from strict loss-confinement trade-off, or lack dynamic reconfigurability over device operations. Here we report an integrated canalization platform that can alleviate this performance trade-off. It is found that by leveraging material absorption of anisotropic 2D materials, the dispersion of this class of materials can flatten without increasing propagation losses and compromising confinement. The realization of such plasmon canalization can be considered using black phosphorus (BP), where topological transition from elliptic to hyperbolic curves can be induced by dynamically leveraging material absorption of BP. At the transition point, BP film can support long range, deeply subwavelength, near-diffractionless field propagation, exhibiting diffraction angle of 5.5°, propagation distance of 10λspp, and λspp < λ0/300.

Cyclic production of biocompatible few-layer graphene ink with in-line shear-mixing for inkjet-printed electrodes and Li-ion energy storage

The scalable production of two-dimensional (2D) materials is needed to accelerate their adoption to industry. In this work, we present a low-cost in-line and enclosed process of exfoliation based on high-shear mixing to create aqueous dispersions of few-layer graphene, on a large scale with a Yw ~ 100% yield by weight and throughput of ϕ ~ 8.3 g h−1. The in-line process minimises basal plane defects compared to traditional beaker-based shear mixing which we attribute to a reduced Reynolds number, Re ~ 105. We demonstrate highly conductive graphene material with conductivities as high as σ ∼ 1.5 × 104 S m−1 leading to sheet-resistances as low as Rs ∼ 2.6 Ω □−1 (t ∼ 25 μm). The process is ideal for formulating non-toxic, biocompatible and highly concentrated (c ∼ 100 mg ml−1) inks. We utilise the graphene inks for inkjet printable conductive interconnects and lithium-ion battery anode composites that demonstrate a low-rate lithium storage capability of 370 mAh g−1, close to the theoretical capacity of graphite. Finally, we demonstrate the biocompatibility of the graphene inks with human colon cells and human umbilical vein endothelial cells at high c ∼ 1 mg ml−1 facilitating a route for the use of the graphene inks in applications that require biocompatibility at high c such as electronic textiles.

Manipulating the interlayer carrier diffusion and extraction process in organic-inorganic heterojunctions: from 2D to 3D structures

Interlayer carrier transfer at heterointerfaces plays a critical role in light to electricity conversion using organic and nanostructured materials. However, how interlayer carrier extraction at these interfaces is poorly understood, especially in organic-inorganic heterogeneous systems. Here, we provide a direct strategy for manipulating the interlayer carrier diffusion process, transfer rate and extraction efficiency in tetracene/MoS2 type-II band alignment heterostructure by constructing the 2D–3D organic-inorganic (O-I) system. As a result, the prolonged diffusion length (12.32 nm), enhanced electron transfer rate (9.53 × 109 s−1) and improved carrier extraction efficiency (60.9%) are obtained in the 2D O-I structure which may be due to the more sufficient charge transfer (CT) state generation. In addition, we have demonstrated that the interlayer carrier transfer behavior complied with the diffusion mechanism based on the one-dimensional diffusion model. The diffusion coefficients have varied from 0.0027 to 0.0036 cm2 s−1 as the organic layer changes from 3D to 2D structures. Apart from the relationship between the carrier injection and diffusion process, temperature-dependent time-resolved spectra measurement is used to reveal the trap-related recombination that may limit the interlayer carrier extraction. The controllable interlayer carrier transfer behavior enables O-I heterojunction to be optimized for optoelectronic applications.

Layer-dependent optical and dielectric properties of centimeter-scale PdSe2 films grown by chemical vapor deposition

Palladium diselenide (PdSe2), a new type of two-dimensional noble metal dihalides (NMDCs), has received widespread attention for its excellent electrical and optoelectronic properties. Herein, high-quality continuous centimeter-scale PdSe2 films with layers in the range of 3L–15L were grown using Chemical Vapor Deposition (CVD) method. The absorption spectra and DFT calculations revealed that the bandgap of the PdSe2 films decreased with the increasing number of layers, which is due to the enhancement of orbital hybridization. Spectroscopic ellipsometry (SE) analysis shows that PdSe2 has significant layer-dependent optical and dielectric properties. This is mainly due to the unique strong exciton effect of the thin PdSe2 film in the UV band. In particular, the effect of temperature on the optical properties of PdSe2 films was also observed, and the thermo-optical coefficients of PdSe2 films with the different number of layers were calculated. This study provides fundamental guidance for the fabrication and optimization of PdSe2-based optoelectronic devices.

Super-Nernstian ion sensitive field-effect transistor exploiting charge screening in WSe2/MoS2 heterostructure

Ion-sensitive field-effect transistors (ISFETs) have gained a lot of attention in recent times as compact, low-cost biosensors with fast response time and label-free detection. Dual gate ISFETs have been shown to enhance detection sensitivity beyond the Nernst limit of 59 mV pH−1 when the back gate dielectric is much thicker than the top dielectric. However, the thicker back-dielectric limits its application for ultrascaled point-of-care devices. In this work, we introduce and demonstrate a pH sensor, with WSe2(top)/MoS2(bottom) heterostructure based double gated ISFET. The proposed device is capable of surpassing the Nernst detection limit and uses thin high-k hafnium oxide as the gate oxide. The 2D atomic layered structure, combined with nanometer-thick top and bottom oxides, offers excellent scalability and linear response with a maximum sensitivity of 362 mV pH−1. We have also used technology computer-aided (TCAD) simulations to elucidate the underlying physics, namely back gate electric field screening through channel and interface charges due to the heterointerface. The proposed mechanism is independent of the dielectric thickness that makes miniaturization of these devices easier. We also demonstrate super-Nernstian behavior with the flipped MoS2(top)/WSe2(bottom) heterostructure ISFET. The results open up a new pathway of 2D heterostructure engineering as an excellent option for enhancing ISFET sensitivity beyond the Nernst limit, for the next-generation of label-free biosensors for single-molecular detection and point-of-care diagnostics.

Wafer scale synthesis of organic semiconductor nanosheets for van der Waals heterojunction devices

Organic semiconductors (OSC) are widely used for consumer electronic products owing to their attractive properties such as flexibility and low production cost. Atomically thin transition metal dichalcogenides (TMDs) are another class of emerging materials with superior electronic and optical properties. Integrating them into van der Waals (vdW) heterostructures provides an opportunity to harness the advantages of both material systems. However, building such heterojunctions by conventional physical vapor deposition (PVD) of OSCs is challenging, since the growth is disrupted due to limited diffusion of the molecules on the TMD surface. Here we report wafer-scale (3-inch) fabrication of transferable OSC nanosheets with thickness down to 15 nm, which enable the realization of heterojunction devices. By controlled dissolution of a poly(acrylic acid) film, on which the OSC films were grown by PVD, they can be released and transferred onto arbitrary substrates. OSC crystal quality and optical anisotropy are preserved during the transfer process. By transferring OSC nanosheets (p-type) onto prefabricated electrodes and TMD monolayers (n-type), we fabricate and characterize various electronic devices including unipolar, ambipolar and antiambipolar field-effect transistors. Such vdW p-n heterojunction devices open up a wide range of possible applications ranging from ultrafast photodetectors to conformal electronics.

Optimum design for the ballistic diode based on graphene field-effect transistors

We investigate the transport behavior of two-terminal graphene ballistic devices with bias voltages up to a few volts suitable for electronics applications. Four graphene devices based ballistic designs, specially fabricated from mechanically exfoliated graphene encapsulated by hexagonal boron nitride, exhibit strong nonlinear I-V characteristic curves at room temperature. A maximum asymmetry ratio of 1.58 is achieved at a current of 60 µA at room temperature through the ballistic behavior is limited by the thermal effect at higher bias. An analytical model using a specular reflection mechanism of particles is demonstrated to simulate the specular reflection of carriers from graphene edges in the ballistic regime. The overall trend of the asymmetry ratio depending on the geometry fits reasonably with the analytical model.

Single-atom catalytic growth of crystals using graphene as a case study

Anchored Single-atom catalysts have emerged as a cutting-edge research field holding tremendous appeal for applications in the fields of chemicals, energy and the environment. However, single-atom-catalysts for crystal growth is a nascent field. Of the few studies available, all of them are based on state-of-the-art in situ microscopy investigations and computational studies, and they all look at the growth of monolayer graphene from a single-atom catalyst. Despite the limited number of studies, they do, collectively, represent a new sub-field of single-atom catalysis, namely single-atom catalytic growth of crystalline solids. In this review, we examine them on substrate-supported and as freestanding graphene fabrication, as well as rolled-up graphene, viz., single-walled carbon nanotubes (SWCNT), grown from a single atom. We also briefly discuss the catalytic etching of graphene and SWCNT’s and conclude by outlining the future directions we envision this nascent field to take.

Photoelectroactive artificial synapse and its application to biosignal pattern recognition

In recent years, optoelectronic artificial synapses have garnered a great deal of research attention owing to their multifunctionality to process optical input signals or to update their weights optically. However, for most optoelectronic synapses, the use of optical stimuli is restricted to an excitatory spike pulse, which majorly limits their application to hardware neural networks. Here, we report a unique weight-update operation in a photoelectroactive synapse; the synaptic weight can be both potentiated and depressed using “optical spikes.” This unique bidirectional operation originates from the ionization and neutralization of inherent defects in hexagonal-boron nitride by co-stimuli consisting of optical and electrical spikes. The proposed synapse device exhibits (i) outstanding analog memory characteristics, such as high accessibility (cycle-to-cycle variation of <1%) and long retention (>21 days), and (ii) excellent synaptic dynamics, such as a high dynamic range (>384) and modest asymmetricity (<3.9). Such remarkable characteristics enable a maximum accuracy of 96.1% to be achieved during the training and inference simulation for human electrocardiogram patterns.