High performance wide-band and medium-band power amplifier MMICs

Author(s):  
T. Apel ◽  
R. Bhatla ◽  
B. Lauterwasser
2012 ◽  
Vol 6 (5) ◽  
Author(s):  
Yadollah Rezazadeh ◽  
Parviz Amiri ◽  
Maryam Baghban Kondori

2019 ◽  
Vol 30 ◽  
pp. 01011
Author(s):  
Vladimir Klokov ◽  
Nikolay Kargin ◽  
Alexander Garmash ◽  
Ekaterina Guzniaeva

The paper presents a description of design methodology for wide-band push-pull large-signal power amplifier based on GaN transistor with an output power of more than 10 W for high-performance Nonlinear Junction Detectors, which allows achieving optimal convergence of the theoretical model in practice, as well as increasing the efficiency of the power amplifier while maintaining a linear gain characteristic.


2014 ◽  
Vol 8 (6) ◽  
pp. 583-592 ◽  
Author(s):  
Alireza Yousefi ◽  
Ali Medi

2018 ◽  
Vol 6 (16) ◽  
pp. 6874-6881 ◽  
Author(s):  
Zhenghui Luo ◽  
Guanghao Li ◽  
Wei Gao ◽  
Kailong Wu ◽  
Zhi-Guo Zhang ◽  
...  

A new nonfullerene electron acceptor of m-MeIC was designed and synthesized, which is effective with different band-gap polymer donors, including wide band-gap J71, medium band-gap PBDB-T and low band-gap PCE-10.


Author(s):  
Mussa Mabrok ◽  
Zahriladha Zakaria ◽  
Nasrullah Saifullah

RF power amplifiers are one of challenging blocks in designing radio frequency transceivers, this is due to non-linearity behavior of power amplifiers that leads to inter-modulation distortion. This paper presents the design of wide-band power amplifier which combined with parallel coupled line band pass filter at the input and output of power amplifier to allow the only required frequency band to pass through the power amplifier. Class-A topology and ATF-511P8 transistor are used in this design. Advanced Design System software used as a simulation tool to simulate the designed wide-band power amplifier. The simulation results showed an input return loss (S11) which less than -10dB, and gain (S21) is higher than 10 dB over the entire frequency band and considers as flat as well. The designed amplifier is stable over the bandwidth (K>1). Inter-modulation distortion is -56.919dBc which is less than -50dBc with 10dBm input power. The designed amplifier can be used for the microwave applications which include weather radar, satellite communication, wireless networking, mobile, and TV.


Author(s):  
Jaewoo Sim ◽  
Jaeyeon Lim ◽  
Myoungkyu Park ◽  
Wenwoo Kang ◽  
Bak-IL Mah

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