Design and Implementation of High Power Stripline Directional coupler For VHF Radars

2019 ◽  
Author(s):  
Hamid Mubarak Mustafa Makkawi
Keyword(s):  
High Power ◽  
Directional Coupler ◽  
Design And Implementation

X-band high power microwave mode-selective directional coupler

2013 ◽  
Vol 25 (7) ◽  
pp. 1747-1750 ◽  
Author(s):  
白珍 Bai Zhen ◽  
李国林 Li Guolin ◽  
张军 Zhang Jun
Keyword(s):  
High Power ◽  
Directional Coupler ◽  
High Power Microwave ◽  
X Band ◽  
Power Microwave

GaN devices for communication applications: evolution of amplifier architectures

2010 ◽  
Vol 2 (1) ◽  
pp. 85-93 ◽  
Author(s):  
Ulf Schmid ◽  
Rolf Reber ◽  
Sébastien Chartier ◽  
Kristina Widmer ◽  
Martin Oppermann ◽  
...  
Keyword(s):  
Low Temperature ◽  
Integrated Circuits ◽  
Time Domain ◽  
High Power ◽  
Continuous Wave ◽  
Microwave Integrated Circuits ◽  
Monolithic Microwave Integrated Circuits ◽  
Class Ab ◽  
Design And Implementation ◽  
Gan Hemt

This paper presents the design and implementation of power amplifiers using high-power gallium nitride (GaN) high electronic mobility transistor (HEMT) powerbars and monolithic microwave integrated circuits (MMICs). The first amplifier is a class AB implementation for worldwide interoperability for microwave access (WiMAX) applications with emphasis on a low temperature cofired ceramics (LTCC) packaging solution. The second amplifier is a class S power amplifier using a high power GaN HEMT MMIC. For a 450 MHz continuous wave (CW) signal, the measured output power is 5.8 W and drain efficiency is 18.5%. Based on time domain simulations, loss mechanisms are identified and optimization steps are discussed.

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