Dynamic Trapping Related Hysteresis of Effective Output Capacitance in Overvoltage Transients of GaN E-mode Devices

2021 ◽  
Author(s):  
Ruize Sun ◽  
Jingxue Lai ◽  
Chao Liu ◽  
Wanjun Chen ◽  
Yiqiang Chen ◽  
...  
Keyword(s):  
Output Capacitance ◽  
Effective Output

Small- and Large-Signal Dynamic Output Capacitance and Energy Loss in GaN-on-Si Power HEMTs

2021 ◽  
Vol 68 (4) ◽  
pp. 1819-1826
Author(s):  
Jia Zhuang ◽  
Grayson Zulauf ◽  
Jaume Roig-Guitart ◽  
James Plummer ◽  
Juan Rivas
Keyword(s):  
Energy Loss ◽  
Large Signal ◽  
Dynamic Output ◽  
Gan On Si ◽  
Output Capacitance ◽  
Signal Dynamic

scholarly journals Output-Capacitance Hysteresis Losses of Field-Effect Transistors

2020 ◽  
Author(s):  
Nirmana Perera ◽  
Armin Jafari ◽  
Luca Nela ◽  
Georgios Kampitsis ◽  
Mohammad Samizadeh Nikoo ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Hysteresis Losses ◽  
Output Capacitance

Minority carrier diffusion length determination from capacitance measurements in Se–CdO photovoltaic cells

1991 ◽  
Vol 69 (3-4) ◽  
pp. 538-542 ◽  
Author(s):  
C. H. Champness ◽  
Z. A. Shukri ◽  
C. H. Chan
Keyword(s):  
Substrate Temperature ◽  
Diffusion Length ◽  
Incident Light ◽  
Photovoltaic Cells ◽  
Minority Carrier Diffusion Length ◽  
Electron Collection ◽  
Straight Line ◽  
Current Change ◽  
Length Determination ◽  
Output Capacitance

In Se–CdO photovoltaic cells, the electron diffusion length Ln in the selenium absorber layer has been determined from measurements of capacitance C and photocurrent under monochromatic illumination by variation of applied reverse bias. If penetrating incident light of band-gap wavelength is used, a plot against 1/C of the illuminated-to-dark current change ΔI yields a straight line over a certain range of bias values. Extrapolation of this line to the 1/C axis yields Ln. It was found in the fabrication of the Se–CdO cells that increasing the substrate temperature from 100 to 140 °C during the selenium deposition resulted in an increase in the cell photovoltaic output. Capacitance and ΔI measurements on these cells showed an increase in diffusion length with substrate temperature, indicating that the increased cell performance was due to improved electron collection in the selenium layer.

Multimodal Systems

2014 ◽  
Author(s):  
Elisabeth André ◽  
Jean-Claude Martin
Keyword(s):  
Natural Language ◽  
Rapid Growth ◽  
Large Data ◽  
Access To Information ◽  
Language Technology ◽  
Data Archives ◽  
Multimodal Systems ◽  
Integral Role ◽  
Effective Output

Recent years have witnessed a rapid growth in the development of multimodal systems. Improving technology and tools enable the development of more intuitive styles of interaction and convenient ways of accessing large data archives. Starting from the observation that natural language plays an integral role in many multimodal systems, this chapter focuses on the use of natural language in combination with other modalities, such as body gestures or gaze. It addresses the following three issues: (1) how to integrate multimodal input including spoken or typed language in a synergistic manner; (2) how to combine natural language with other modalities in order to generate more effective output; and (3) how to make use of natural language technology in combination with other modalities in order to enable better access to information.

scholarly journals Equivalent circuit modeling in GaN wireless power transmission including stray inductance and capacitance by measuring radiated emission

2022 ◽  
Author(s):  
Toshihide IDE ◽  
Mitsuaki Shimizu ◽  
Noriyuki TAKADA
Keyword(s):  
Power Transmission ◽  
Supply Voltage ◽  
Peak Shift ◽  
Stray Capacitance ◽  
Resonance Model ◽  
Series Resonance ◽  
Equivalent Circuit Modeling ◽  
Destructive Measurement ◽  
Output Capacitance ◽  
Radiated Emission

Abstract We establish the method for estimating the stray elements of the GaN-WPT circuit by measuring the radiated emission around the GaN switching device. By controlling the circuit supply voltage, the spectrum peak shift due to the output capacitance of the GaN-HEMT is observed. It is found that these peak shift characteristics include the influence of both the stray wire inductance and stray capacitance. By the fitting using the series resonance model, the value of the stray inductance and stray capacitance can be estimated in the non-destructive measurement in the GaN-WPT circuit.

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