Analysis on Variations of Metal Gate Work Function on Junctionless Double Gate MOSFET with High-k Spacers

2020 ◽  
Author(s):  
Gaurav Dhiman ◽  
Rajeev Pourush
Keyword(s):  
Work Function ◽  
Double Gate ◽  
Metal Gate ◽  
High K ◽  
Double Gate Mosfet ◽  
Gate Work Function

Study of High-$k$/Metal-Gate Work Function Variation in FinFET: The Modified RGG Concept

2013 ◽  
Vol 34 (12) ◽  
pp. 1560-1562 ◽  
Author(s):  
Hyohyun Nam ◽  
Changhwan Shin
Keyword(s):  
Work Function ◽  
Metal Gate ◽  
High K ◽  
Gate Work Function

Metal Gate Work Function Engineering: Sub-Nano Regime Double Gate MOSFETs

2019 ◽  
Author(s):  
Md. Rokib Hasan ◽  
Kefayet Ullah ◽  
Marwan Hossain ◽  
Tanvir Hossain ◽  
Nafis Farhan Rashid ◽  
...  
Keyword(s):  
Work Function ◽  
Double Gate ◽  
Metal Gate ◽  
Gate Work Function

scholarly journals Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories

Micromachines ◽  
2021 ◽  
Vol 12 (9) ◽  
pp. 1084
Author(s):  
Sivaramakrishnan Ramesh ◽  
Arjun Ajaykumar ◽  
Lars-Åke Ragnarsson ◽  
Laurent Breuil ◽  
Gabriel El Hajjam ◽  
...  
Keyword(s):  
Work Function ◽  
Metal Electrode ◽  
Flat Band ◽  
Nand Flash ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function ◽  
High K ◽  
The Impact ◽  
Gate Work Function

We studied the metal gate work function of different metal electrode and high-k dielectric combinations by monitoring the flat band voltage shift with dielectric thicknesses using capacitance–voltage measurements. We investigated the impact of different thermal treatments on the work function and linked any shift in the work function, leading to an effective work function, to the dipole formation at the metal/high-k and/or high-k/SiO2 interface. We corroborated the findings with the erase performance of metal/high-k/ONO/Si (MHONOS) capacitors that are identical to the gate stack in three-dimensional (3D) NAND flash. We demonstrate that though the work function extraction is convoluted by the dipole formation, the erase performance is not significantly affected by it.

scholarly journals Performance Evaluation of FD-SOI MOSFETS for Different Metal Gate Work Function

2011 ◽  
Vol 2 (1) ◽  
pp. 11-24 ◽  
Author(s):  
Deepesh Ranka ◽  
Ashwani K. Rana ◽  
Rakesh Kumar Yadav ◽  
Kamalesh Yadav ◽  
Devendra Giri
Keyword(s):  
Performance Evaluation ◽  
Work Function ◽  
Metal Gate ◽  
Gate Work Function

Oxygen incorporation in TiN for metal gate work function tuning with a replacement gate integration approach

2010 ◽  
Vol 87 (9) ◽  
pp. 1805-1807 ◽  
Author(s):  
Zilan Li ◽  
Tom Schram ◽  
Thomas Witters ◽  
Joshua Tseng ◽  
Stefan De Gendt ◽  
...  
Keyword(s):  
Work Function ◽  
Metal Gate ◽  
Oxygen Incorporation ◽  
Integration Approach ◽  
Work Function Tuning ◽  
Gate Work Function

Bottom-up method for work function tuning in high-k/metal gate stacks in advanced CMOS technologies

2011 ◽  
Author(s):  
Mrunal A. Khaderbad ◽  
Rohit Pandharipande ◽  
Aradhana Gautam ◽  
Abhishek Mishra ◽  
Meenakshi Bhaisare ◽  
...  
Keyword(s):  
Work Function ◽  
Gate Stacks ◽  
Metal Gate ◽  
Bottom Up ◽  
High K ◽  
Work Function Tuning
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