Controllability of flatband voltage in high-k gate stack structures - remarkable advantages of La/sub 2/O/sub 3/ over HfO/sub 2/

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings ◽

10.1109/icsict.2006.306256 ◽

2006 ◽

Author(s):

K. Ohmori ◽

P. Ahmet ◽

K. Shiraishi ◽

K. Yamabe ◽

H. Watanabe ◽

...

Keyword(s):

High K ◽

Flatband Voltage

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