A Ku-band CMOS 6-bit Digital-Controlled Phase-Invariant Variable Gain Amplifier and Attenuator

2019 ◽  
Author(s):  
Jing Xu ◽  
Yongran Yi ◽  
Xiaohu You ◽  
Dixian Zhao
Keyword(s):  
Variable Gain Amplifier ◽  
Invariant Variable ◽  
Variable Gain ◽  
Ku Band

A High Efficiency Variable Gain Amplifier Circuit with Controllable Transconductance Amp

2009 ◽  
Vol 129 (10) ◽  
pp. 1968-1969
Author(s):  
Tetsuro Okura ◽  
Shunsuke Okura ◽  
Toru Ido ◽  
Kenji Taniguchi
Keyword(s):  
High Efficiency ◽  
Variable Gain Amplifier ◽  
Amplifier Circuit ◽  
Variable Gain

A Fully Differential Variable Gain Amplifier for Portable Impedance Sensing Applications

2019 ◽  
Vol 7 ◽  
Author(s):  
Jorge Pérez Bailón ◽  
Jaime Ramírez-Angulo ◽  
Belén Calvo ◽  
Nicolás Medrano
Keyword(s):  
Power Consumption ◽  
Active Area ◽  
Variable Gain Amplifier ◽  
Cmos Process ◽  
Current Steering ◽  
Impedance Sensing ◽  
Variable Gain ◽  
Fully Differential ◽  
Sensing Applications ◽  
Constant Bandwidth

This paper presents a Variable Gain Amplifier (VGA) designed in a 0.18 μm CMOS process to operate in an impedance sensing interface. Based on a transconductance-transimpedance (TC-TI) approach with intermediate analog-controlled current steering, it exhibits a gain ranging from 5 dB to 38 dB with a constant bandwidth around 318 kHz, a power consumption of 15.5 μW at a 1.8 V supply and an active area of 0.021 mm2.

scholarly journals An E-Band 21-dB Variable-Gain Amplifier with 0.5-V Supply in 40-nm CMOS

Electronics ◽  
2021 ◽  
Vol 10 (7) ◽  
pp. 804
Author(s):  
Gibeom Shin ◽  
Kyunghwan Kim ◽  
Kangseop Lee ◽  
Hyun-Hak Jeong ◽  
Ho-Jin Song
Keyword(s):  
Power Consumption ◽  
Frequency Band ◽  
Noise Figure ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Operating Frequency ◽  
Variable Gain Amplifier ◽  
Variable Gain ◽  
Operating Frequency Band ◽  
Shunt Capacitors

This paper presents a variable-gain amplifier (VGA) in the 68–78 GHz range. To reduce DC power consumption, the drain voltage was set to 0.5 V with competitive performance in the gain and the noise figure. High-Q shunt capacitors were employed at the gate terminal of the core transistors to move input matching points for easy matching with a compact transformer. The four stages amplifier fabricated in 40-nm bulk complementary metal oxide semiconductor (CMOS) showed a peak gain of 24.5 dB at 71.3 GHz and 3‑dB bandwidth of more than 10 GHz in 68–78 GHz range with approximately 4.8-mW power consumption per stage. Gate-bias control of the second stage in which feedback capacitances were neutralized with cross-coupled capacitors allowed us to vary the gain by around 21 dB in the operating frequency band. The noise figure was estimated to be better than 5.9 dB in the operating frequency band from the full electromagnetic (EM) simulation.

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