Scaling the high-performance double-gate SOI MOSFET down to the 32 nm technology node with SiO/sub 2/-based gate stacks

2006 ◽  
Author(s):  
N. Barin ◽  
M. Braccioli ◽  
C. Fiegna ◽  
E. Sangiorgi
Keyword(s):  
High Performance ◽  
Double Gate ◽  
Gate Stacks ◽  
Soi Mosfet ◽  
Technology Node

32nm technology node Double-Gate SOI MOSFET using SiO2 gate stacks

2006 ◽  
Author(s):  
Enrico Sangiorgi ◽  
Nicola Barin ◽  
Marco Braccioli ◽  
Claudio Fiegna
Keyword(s):  
Double Gate ◽  
Gate Stacks ◽  
Soi Mosfet ◽  
Technology Node

scholarly journals To study high performance analysis of surround gate SOI MOSFET

2018 ◽  
Vol 7 (2.8) ◽  
pp. 191
Author(s):  
Arjimand Ashaf ◽  
Manisha Tyagi ◽  
Prashant Mani
Keyword(s):  
Performance Analysis ◽  
High Performance ◽  
Device Modeling ◽  
Double Gate ◽  
Electrical Characteristics ◽  
Soi Mosfet ◽  
Gate Structure ◽  
Rigorous Study ◽  
Soi Devices

In this paper, we are presenting a rigorous study about SOI MOSFET devices development. The development of SOI devices based on gate structure from single gate to surround gate is presented in this paper. We compared the various electrical characteristics between Single gate, double gate, and bulk and also discussed the device modeling based on surround gate structure.

scholarly journals Low-power and high-performance Automatic Gain Control systems based on nanoscale Field Effect Diode and SOI-MOSFET

2010 ◽  
Vol 7 (5) ◽  
pp. 371-376 ◽  
Author(s):  
Farzan Jazayeri ◽  
Farshid Raissi ◽  
Behjat Forouzandeh
Keyword(s):  
Low Power ◽  
Control Systems ◽  
Field Effect ◽  
High Performance ◽  
Automatic Gain Control ◽  
Gain Control ◽  
Soi Mosfet
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