A high performance double-gate SOI MOSFET using lateral solid phase epitaxy

2002 ◽  
Author(s):  
Haitao Liu ◽  
Zhibin Xiong ◽  
Sin ◽  
Peiqi Xuan ◽  
Bokor
Keyword(s):  
High Performance ◽  
Solid Phase ◽  
Double Gate ◽  
Solid Phase Epitaxy ◽  
Soi Mosfet

Implementation and characterization of the double-gate mosfet using lateral solid-phase epitaxy

2003 ◽  
Vol 50 (6) ◽  
pp. 1552-1555 ◽  
Author(s):  
Haitao Liu ◽  
Zhibin Xiong ◽  
J.K.O. Sin
Keyword(s):  
Solid Phase ◽  
Double Gate ◽  
Solid Phase Epitaxy ◽  
Double Gate Mosfet

scholarly journals To study high performance analysis of surround gate SOI MOSFET

2018 ◽  
Vol 7 (2.8) ◽  
pp. 191
Author(s):  
Arjimand Ashaf ◽  
Manisha Tyagi ◽  
Prashant Mani
Keyword(s):  
Performance Analysis ◽  
High Performance ◽  
Device Modeling ◽  
Double Gate ◽  
Electrical Characteristics ◽  
Soi Mosfet ◽  
Gate Structure ◽  
Rigorous Study ◽  
Soi Devices

In this paper, we are presenting a rigorous study about SOI MOSFET devices development. The development of SOI devices based on gate structure from single gate to surround gate is presented in this paper. We compared the various electrical characteristics between Single gate, double gate, and bulk and also discussed the device modeling based on surround gate structure.

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