One selector-one resistor (1S1R) crossbar array for high-density flexible memory applications

Author(s):  
Jiun-Jia Huang ◽  
Yi-Ming Tseng ◽  
Wun-Cheng Luo ◽  
Chung-Wei Hsu ◽  
Tuo-Hung Hou
Author(s):  
Arshid Nisar ◽  
Seema Dhull ◽  
Sparsh Mittal ◽  
Brajesh Kumar Kaushik

1995 ◽  
Vol 392 ◽  
Author(s):  
Larry R. Dalton ◽  
Aaron W. Harper ◽  
Zhiyong Liang ◽  
Jingsong Zhu ◽  
Uzi Efron ◽  
...  

AbstractChromophores capable of undergoing conformational changes when exposed to ultraviolet or visible light have been synthesized with functional groups permitting attachment to polymer matrices. One class of such chromophores, containing reactive functionalities at both ends of the chromophore, are referred to as double-end crosslinkable (DEC) chromophores. These chromophores are used in the synthesis of hardened nonlinear optically active lattices and in the fabrication of buried channel nonlinear optical waveguides by photoprocessing; development of such waveguides represents a critical step in the production of polymeric electro-optic modulators. Such chromophores are also crucial to the phenomena of laser-assisted poling (also known as photochemically-induced poling). Finally, these chromophores are attached to the surface of polystyrene beads permitting the realization of room temperature spectral hole burning exploiting morphology-dependent resonances. Such resonances provide the basis of wavelength coding for the development of high density optical memories.


2010 ◽  
Vol 31 (9) ◽  
pp. 1047-1049 ◽  
Author(s):  
Mei Xue ◽  
Sanaz Kabehie ◽  
Adam Z. Stieg ◽  
Ekaterina Tkatchouk ◽  
Diego Benitez ◽  
...  

2021 ◽  
Vol 118 (11) ◽  
pp. 112106
Author(s):  
Jinsu Jung ◽  
Dongjoo Bae ◽  
Sungho Kim ◽  
Hee-Dong Kim

2010 ◽  
Vol 57 (19) ◽  
pp. 1833-1840 ◽  
Author(s):  
I.M. Sokolov ◽  
D.V. Kupriyanov ◽  
R.G. Olave ◽  
M.D. Havey

2020 ◽  
Vol 34 (12) ◽  
pp. 2050115
Author(s):  
Liping Fu ◽  
Sikai Chen ◽  
Zewei Wu ◽  
Xiaoyan Li ◽  
Mingyang You ◽  
...  

Sneak current issue of RRAM-based crossbar array is one of the biggest hindrances for high-density memory application. The integration of an addition selector to each cell is one of the most familiar solutions to avoid this undesired cross-talk issue, and resistive switching parameters would affect on the storage density. This paper investigates the potential impact of different resistive switching parameters on crossbar arrays with one-diode one-resistor (1D1R) and one-selector one-resistor (1S1R) architectures. Results indicate that 1S1R architecture is a more scalable technology for high-density crossbar array than 1D1R, and the storage density of 1D1R- and 1S1R-based crossbar array shows little dependence on resistance values of high-resistance state and low-resistance state, which gives a guideline for choosing appropriate selectors for RRAM crossbar array with specific parameters.


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