A mechanism of stress-induced metal void in narrow aluminum-based metallization with the HDP CVD oxide dielectric

Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247) ◽

10.1109/iitc.1999.787105 ◽

2003 ◽

Author(s):

Soo Geun Lee ◽

Heok-Sang Oh ◽

Sun-Rae Kim ◽

Seung-Heon Song ◽

Sun Hu Park ◽

...

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