scholarly journals Contactless Fault Isolation of Ultra Low k Dielectrics in Soft Breakdown Condition

Author(s):  
N. Herfurth ◽  
C. Wu ◽  
T. Nakamura ◽  
I.De Wolf ◽  
K. Croes ◽  
...  
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Author(s):  
N. Herfurth ◽  
A. Beyreuther ◽  
E. Amini ◽  
C. Boit ◽  
M. Simon-Najasek ◽  
...  
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2019 ◽  
Vol 92 ◽  
pp. 73-78 ◽  
Author(s):  
N. Herfurth ◽  
C. Wu ◽  
A. Beyreuther ◽  
T. Nakamura ◽  
I. De Wolf ◽  
...  

Author(s):  
Satish Kodali ◽  
Mia Nasimullah ◽  
Yuting Wei ◽  
Chong Khiam Oh ◽  
Felix Beaudoin

Abstract With increasing complexity involved in advance node semiconductor process development, dependability on parametric test structures has also increased significantly. Test structures play a predominant role throughout the entire development cycle of a product. It becomes very important to understand the root cause of failures at fastest pace to take necessary corrective actions. The use of ultra low K dielectrics for back end of line wafer build for advanced nodes created significant constraints on conventional beam imaging methods for fault isolation. This paper provides a streamlined process flow for root cause identification on shorts on advanced 20 nm and sub-20 nm technologies. Three unique cases are presented to demonstrate three typical situations identified in the process flow. They are blown capacitors, gate leakage, and resistance ladder short isolation.


Author(s):  
Avril V. Somlyo ◽  
H. Shuman ◽  
A.P. Somlyo

This is a preliminary report of electron probe analysis of rabbit portal-anterior mesenteric vein (PAMV) smooth muscle cryosectioned without fixation or cryoprotection. The instrumentation and method of electron probe quantitation used (1) and our initial results with cardiac (2) and skeletal (3) muscle have been presented elsewhere.In preparations depolarized with high K (K2SO4) solution, significant calcium peaks were detected over the sarcoplasmic reticulum (Fig 1 and 2) and the continuous perinuclear space. In some of the fibers there were also significant (up to 200 mM/kg dry wt) calcium peaks over the mitochondria. However, in smooth muscle that was not depolarized, high mitochondrial Ca was found in fibers that also contained elevated Na and low K (Fig 3). Therefore, the possibility that these Ca-loaded mitochondria are indicative of cell damage remains to be ruled out.


TAPPI Journal ◽  
2014 ◽  
Vol 13 (1) ◽  
pp. 33-41
Author(s):  
YVON THARRAULT ◽  
MOULOUD AMAZOUZ

Recovery boilers play a key role in chemical pulp mills. Early detection of defects, such as water leaks, in a recovery boiler is critical to the prevention of explosions, which can occur when water reaches the molten smelt bed of the boiler. Early detection is difficult to achieve because of the complexity and the multitude of recovery boiler operating parameters. Multiple faults can occur in multiple components of the boiler simultaneously, and an efficient and robust fault isolation method is needed. In this paper, we present a new fault detection and isolation scheme for multiple faults. The proposed approach is based on principal component analysis (PCA), a popular fault detection technique. For fault detection, the Mahalanobis distance with an exponentially weighted moving average filter to reduce the false alarm rate is used. This filter is used to adapt the sensitivity of the fault detection scheme versus false alarm rate. For fault isolation, the reconstruction-based contribution is used. To avoid a combinatorial excess of faulty scenarios related to multiple faults, an iterative approach is used. This new method was validated using real data from a pulp and paper mill in Canada. The results demonstrate that the proposed method can effectively detect sensor faults and water leakage.


2010 ◽  
Vol 130 (4) ◽  
pp. 319-324
Author(s):  
Kouichiro Mizuno ◽  
Hirotake Sugawara ◽  
Akihiro Murayama
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2002 ◽  
Vol 716 ◽  
Author(s):  
Yi-Mu Lee ◽  
Yider Wu ◽  
Joon Goo Hong ◽  
Gerald Lucovsky

AbstractConstant current stress (CCS) has been used to investigate the Stress-Induced Leakage Current (SILC) to clarify the influence of boron penetration and nitrogen incorporation on the breakdown of p-channel devices with sub-2.0 nm Oxide/Nitride (O/N) and oxynitride dielectrics prepared by remote plasma enhanced CVD (RPECVD). Degradation of MOSFET characteristics correlated with soft breakdown (SBD) and hard breakdown (HBD), and attributed to the increased gate leakage current are studied. Gate voltages were gradually decreased during SBD, and a continuous increase in SILC at low gate voltages between each stress interval, is shown to be due to the generation of positive traps which are enhanced by boron penetration. Compared to thermal oxides, stacked O/N and oxynitride dielectrics with interface nitridation show reduced SILC due to the suppression of boron penetration and associated positive trap generation. Devices stressed under substrate injection show harder breakdown and more severe degradation, implying a greater amount of the stress-induced defects at SiO2/substrate interface. Stacked O/N and oxynitride devices also show less degradation in electrical performance compared to thermal oxide devices due to an improved Si/SiO2 interface, and reduced gate-to-drain overlap region.


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