Efektifitas Pengawetan Batang Kelapa Sawit (Elaeis guinensis Jacq.) Terhadap Serangan Rayap Tanah (Coptotermes curvignathus Holmgren) Menggunakan Campuran Boraks dan Asam Borat

Oil palm trunk has a high moisture content about 60%-300% depended on the height and age of the tree and it was presumed to have low quality and prone to decay by organisms. It is necessary to improve the trunk quality using preservatives. The purpose of this study is to calculate the value of the penetration and retention, to test the durability of oil palm trunk from the attack of termites after treated with a mixed preservative of borax and boric acid. This study used the free of defects trunk obtained from PT. Buana Karya Bhakti in Tanah Bumbu, South Kalimantan, planted in 1998 (±18 years old). The research used two factors: A (the preservative concentration variations) = a1 (5%); a2 (10%); a3 (15%); and B (soaking time variation) = b1 (1 day); b2 (3 days); b3 (5 days). The results showed that the trunk water content was 14.62%, the density was 0.25 g/cm3, the radial shrinkage was 1.48% and the tangential shrinkage was 2.17%. The average of boron penetration was 50 mm. The highest retention was got from the treatment of boron concentration 15% in 2 days for 54.71 kg/m3, while the lowest retention was from 5% boron in 1-day treatment for 13.7 kg/m3. The weight loss ranged from 19.30%-41.32%, and the average of termites attack degree ranged between 40% and 70% (categorized as moderate), while the control was decayed completely by termites in both experiments. The mortality rate in all treatments was 100%, while the control ranged from 7%-10.5%.Keywords: oil palm trunk, preservation, boron, termites

Leaky Device Channel Anomaly Identification and Case Study by Nano-Probing Technique, Curve Fitting, and Model Analysis

This paper demonstrated the use of curve fitting method on device transfer characteristic curve for device carrier mobility analysis and failure mechanism verification. In the content, a systematic device characterization was performed to identify device failure mode and failure site. Based on physical observations and electrical results, a device gate oxide boron penetration failure mechanism and an unexpected subtle p-type dopant at p-MOS device channel area was conjectured. However, this unexpected p-type dopant was successfully proved by subsequent carrier mobility analysis results, and the gate oxide boron penetration failure mechanism was accordingly verified.

Study on the Complex Strengthening Processes of 5Cr2NiMoVSi Steel Large Hot Forging Dies

To meet the high requirements of fatigue strength and thermal stability for the large forging dies, the complex strengthening process tests of new high thermal stability die steel 5Cr2NiMoVSi were done. This complex strengthening process was nickel plating the RE boron penetration→ pre-cool quenching → high temperature tempering. The results show that the surface micro-hardness, high temperature oxidation resistance, thermal fatigue resistance and wear resistance of 5Cr2NiMoVSi steel can greatly be improved by these processes. It has achieved significant results for auto front axle large forging dies by using the materials and processing technology.

Non-Gaussian Local Density Diffusion (LDD-) Model for Boron Diffusion in Si- and SixGe1-x Ultra-Shallow Junction Post-Implant and Advanced Rapid-Thermal-Anneals

Boron diffusion after implant and anneal has been studied extensively in the past, without de-convoluting the Boron diffusion behavior by the initial post implant Boron concentration profile, which is done in this work first time. To support the de-convolution approach, the local density diffusion (LDD) model is selected, because this model is based on just one single arbitrary diffusion parameter per atomic species and host lattice combination. The LDD model is used for Phosphorus and Arsenic diffusion so far and an extension to simulate Boron diffusion in presence of Boron clusters is presented here. As the result, maximum Boron penetration depth post different rapid thermal anneals and the quantification of diffusing and clustering (non-diffusing) Boron in silicon and silicon-germanium host lattice systems are given.