RF and hot carrier effects in metal gate/high-k dielectric nMOSFETs at cryogenic temperature

2009 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2009.5173397 ◽

2009 ◽

Author(s):

Hyun Chul Sagong ◽

Kyong Taek Lee ◽

Seung-Ho Hong ◽

Hyun-Sik Choi ◽

Gil-Bok Choi ◽

...

Keyword(s):

Cryogenic Temperature ◽

Hot Carrier ◽

High K ◽

Hot Carrier Effects ◽

High K Dielectric

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RF performance degradation in 100-nm metal gate/high-k dielectric nMOSFET by hot carrier effects

2009 Proceedings of the European Solid State Device Research Conference ◽

10.1109/essderc.2009.5331402 ◽

2009 ◽

Author(s):

Hyun Chul Sagong ◽

Kyong Taek Lee ◽

Chang Yong Kang ◽

Gil-Bok Choi ◽

Hyun-Sik Choi ◽

...

Keyword(s):

Performance Degradation ◽

Hot Carrier ◽

High K ◽

Hot Carrier Effects ◽

High K Dielectric ◽

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Tradeoff Between Hot Carrier and Negative Bias Temperature Degradations in High-Performance $\hbox{Si}_{1 - x}\hbox{Ge}_{x}$ pMOSFETs With High-$k$/Metal Gate Stacks

IEEE Electron Device Letters ◽

10.1109/led.2010.2071851 ◽

2010 ◽

Author(s):

Won-Ho Choi ◽

Chang-Young Kang ◽

Jung-Woo Oh ◽

Byoung-Hun Lee ◽

Prashant Majhi ◽

...

Keyword(s):

High Performance ◽

Negative Bias ◽

Gate Stacks ◽

Hot Carrier ◽

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Assessing the Performance of CMOS Amplifiers Using High-k Dielectric with Metal Gate on High Mobility Substrate

Communications in Computer and Information Science - Advances in Computing and Data Sciences ◽

10.1007/978-981-13-1810-8_28 ◽

2018 ◽

pp. 279-289

Author(s):

Deepa Anand ◽

M. Swathi ◽

A. Purushothaman ◽

Sundararaman Gopalan

Keyword(s):

High Mobility ◽

High K ◽

High K Dielectric

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Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC10

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Hot Carrier ◽

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Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress

Microelectronics Reliability ◽

10.1016/j.microrel.2012.06.011 ◽

2012 ◽

Vol 52 (9-10) ◽

pp. 1901-1904 ◽

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Chiho Lee ◽

Jeongsoo Park ◽

...

Keyword(s):

Gate Stacks ◽

Hot Carrier ◽

High K ◽

Enhanced Degradation

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Channel hot-carrier degradation in pMOS and nMOS short channel transistors with high-k dielectric stack

Microelectronic Engineering ◽

10.1016/j.mee.2009.05.013 ◽

2010 ◽

Vol 87 (1) ◽

pp. 47-50 ◽

Author(s):

E. Amat ◽

T. Kauerauf ◽

R. Degraeve ◽

R. Rodríguez ◽

M. Nafría ◽

...

Keyword(s):

Short Channel ◽

Hot Carrier ◽

High K ◽

High K Dielectric ◽

Hot Carrier Degradation

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Electron Energy-Loss Spectrum Imaging of an HfSiO High-k Dielectric Stack with a TaN Metal Gate

Springer Proceedings in Physics - Microscopy of Semiconducting Materials 2007 ◽

10.1007/978-1-4020-8615-1_68 ◽

2008 ◽

pp. 313-316

Author(s):

M MacKenzie ◽

A J Craven ◽

D W McComb ◽

C M McGilvery ◽

S McFadzean ◽

...

Keyword(s):

Energy Loss ◽

Electron Energy ◽

Electron Energy Loss Spectrum ◽

High K ◽

Spectrum Imaging ◽

High K Dielectric ◽

Electron Energy Loss

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Temperature operation of FDSOI devices with metal gate (TaSiN) and high-k dielectric

ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003. ◽

10.1109/essderc.2003.1256941 ◽

2004 ◽

Author(s):

J. Pretet ◽

A. Vandooren ◽

S. Ciistoloveanu

Keyword(s):

High K ◽

High K Dielectric

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New investigation of hot carrier degradation of RF small-signal parameters in high-k/metal gate nMOSFETs

2011 International Reliability Physics Symposium ◽

10.1109/irps.2011.5784516 ◽

2011 ◽

Author(s):

Hyun Chul Sagong ◽

Chang Yong Kang ◽

Chang-Woo Sohn ◽

Min Sang Park ◽

Do-Young Choi ◽

...

Keyword(s):

Small Signal ◽

Hot Carrier ◽

Signal Parameters ◽

High K ◽

Hot Carrier Degradation

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Dopant Segregated Schottky Source/Drain for Germanium p-MOSFETs with Metal Gate/High-k Dielectric Stack

ECS Meeting Abstracts ◽

10.1149/ma2009-02/31/2395 ◽

2009 ◽

Keyword(s):

High K ◽

High K Dielectric

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