A 315–340 GHz Frequency Amplifier/Multiplier Chain with 8.5 dBm Peak Output Power

2020 ◽  
Author(s):  
Xianjin Deng ◽  
Yaoling Tian ◽  
Kun Huang ◽  
Jun Jiang ◽  
Yue He ◽  
...  
Keyword(s):  
Output Power ◽  
Peak Output Power

scholarly journals A G-Band High Output Power and Wide Bandwidth Sheet Beam Extended Interaction Klystron Design Operating at TM31 with 2π Mode

Electronics ◽  
2021 ◽  
Vol 10 (16) ◽  
pp. 1948
Author(s):  
Shasha Li ◽  
Feng Zhang ◽  
Cunjun Ruan ◽  
Yiyang Su ◽  
Pengpeng Wang
Keyword(s):  
Output Power ◽  
Characteristic Impedance ◽  
Great Influence ◽  
Operating Mode ◽  
High Order Mode ◽  
Input Power ◽  
Mode Competition ◽  
Tuning Method ◽  
Peak Output Power ◽  
Extended Interaction

In this paper, we propose a high-order mode sheet beam extended interaction klystron (EIK) operating at G-band. Through the study of electric field distribution, we choose TM31 2π mode as the operating mode. The eigenmode simulation shows that the resonant frequency of the modes adjacent to the operating mode is far away from the central frequency, so there is almost no mode competition in our high mode EIK. In addition, by studying the sensitivity of the related geometry parameters, we conclude that the height of the coupling cavity has a great influence on the effective characteristic impedance, and the width of the gap mainly affects the working frequency. Therefore, it is necessary to strictly control the fabrication tolerance within 2 μm. Finally, the RF circuit using six barbell multi-gap cavities is determined, with five gaps for the input cavity and idler cavities and seven gaps for the output cavity. To expand the bandwidth, the stagger tuning method is adopted. Under the conditions of a voltage of 16.5 kV, current of 0.5 A and input power of 0.2 W, the peak output power of 650 W and a 3-dB bandwidth of 700 MHz are achieved without any self-oscillation.

A broadband 23.1 ∼ 27.2 GHz doherty power amplifier with peak output power of 24.3 dBm

Circuit World ◽  
2019 ◽  
Vol 46 (1) ◽  
pp. 1-5
Author(s):  
Yanfeng Fang ◽  
Yijiang Zhang
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Input Power ◽  
Content Type ◽  
Fully Integrated ◽  
Power Added Efficiency ◽  
Peak Output Power ◽  
Saturated Output Power ◽  
Direct Input ◽  
Matching Techniques

Purpose This paper aims to implement a new high output power fully integrated 23.1 to 27.2 GHz gallium arsenide heterojunction bipolar transistor power amplifier (PA) to meet the stringent linearity requirements of LTE systems. Design/methodology/approach The direct input power dividing technique is used on the chip. Broadband input and output matching techniques are used for broadband Doherty operation. Findings The PA achieves a small-signal gain of 22.8 dB at 25.1 GHz and a saturated output power of 24.3 dBm at 25.1 GHz with a maximum power added efficiency of 31.7%. The PA occupies 1.56 mm2 (including pads) and consumes a maximum current of 79.91 mA from a 9 V supply. Originality/value In this paper, the author proposed a novel direct input dividing technique with broadband matching circuits using a low Q output matching technique, and demonstrated a fully-integrated Doherty PA across frequencies of 23.1∼27.2 GHz for long term evolution-license auxiliary access (LTE-LAA) handset applications.

Attainment of a 40 TW peak output power with a visible-range hybrid femtosecond laser system

2019 ◽  
Vol 49 (10) ◽  
pp. 901-904 ◽  
Author(s):  
S V Alekseev ◽  
N G Ivanov ◽  
V F Losev ◽  
G A Mesyats ◽  
L D Mikheev ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Output Power ◽  
Laser System ◽  
Visible Range ◽  
Peak Output Power

A 280-325 GHz Frequency Multiplier Chain With 2.5 dBm Peak Output Power

2019 ◽  
Author(s):  
Peigen Zhou ◽  
Jixin Chen ◽  
Pinpin Yan ◽  
Zhe Chen ◽  
Debin Hou ◽  
...  
Keyword(s):  
Output Power ◽  
Frequency Multiplier ◽  
Peak Output Power
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