scholarly journals Analysis and Optimization of Threshold Voltage Variability by Polysilicon Grain Size Simulation in 3D NAND Flash Memory

2020 ◽  
Vol 8 ◽  
pp. 140-144 ◽  
Author(s):  
Tao Yang ◽  
Zhiliang Xia ◽  
Dandan Shi ◽  
Yingjie Ouyang ◽  
Zongliang Huo
Keyword(s):  
Grain Size ◽  
Threshold Voltage ◽  
Flash Memory ◽  
Nand Flash ◽  
Nand Flash Memory

In-line Monitoring of Grain Size Distribution of Channel Poly Si used in 3D NAND Flash Memory Devices using Multiwavelength Raman Spectroscopy

MRS Advances ◽  
2016 ◽  
Vol 1 (5) ◽  
pp. 339-348 ◽  
Author(s):  
Noh Yeal Kwak ◽  
Chul Young Ham ◽  
Min Sung Ko ◽  
Sung Chul Shin ◽  
Seung Jin Yeom ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Grain Size ◽  
Size Distribution ◽  
Grain Size Distribution ◽  
Flash Memory ◽  
Memory Devices ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Cross Sectional ◽  
Monitoring Technique

ABSTRACTFeasibility of multiwavelength Raman spectroscopy was studied as a potential in-line monitoring technique for grain size distribution in channel poly-Si used in three dimensional stacked NAND (3D NAND) Flash memory devices. Various channel poly-Si materials in 3D-NAND Flash memory devices, converted from chemical vapor deposition (CVD) grown a-Si, were characterized using non-contact, multiwavelength Raman spectroscopy and high resolution cross-sectional transmission electron microscopy (HRXTEM). The Raman characterization results were compared with HRXTEM images. The correlation between the grain size distribution characterized by multiwavelength Raman spectroscopy and “on current” (ION) of 3D NAND Flash memory devices was investigated. Good correlation between these techniques was seen. Multiwavelength Raman spectroscopy is very promising as a non-destructive in-line monitoring technique for grain size distribution in channel poly-Si used in 3D NAND Flash memory devices.

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