Future navy application of wide bandgap power semiconductor devices

2002 ◽  
Vol 90 (6) ◽  
pp. 1077-1082 ◽  
Author(s):  
T. Ericsen
Keyword(s):  
Semiconductor Devices ◽  
Wide Bandgap ◽  
Power Semiconductor ◽  
Power Semiconductor Devices

A Survey of Wide Bandgap Power Semiconductor Devices

2014 ◽  
Vol 29 (5) ◽  
pp. 2155-2163 ◽  
Author(s):  
Jose Millan ◽  
Philippe Godignon ◽  
Xavier Perpina ◽  
Amador Perez-Tomas ◽  
Jose Rebollo
Keyword(s):  
Semiconductor Devices ◽  
Wide Bandgap ◽  
Power Semiconductor ◽  
Power Semiconductor Devices

High-Temperature Characterization and Comparison of 1.2 kV SiC Power Semiconductor Devices

2013 ◽  
Vol 10 (4) ◽  
pp. 138-143 ◽  
Author(s):  
Christina DiMarino ◽  
Zheng Chen ◽  
Dushan Boroyevich ◽  
Rolando Burgos ◽  
Paolo Mattavelli
Keyword(s):  
High Temperature ◽  
Semiconductor Devices ◽  
Wide Bandgap ◽  
Current Gain ◽  
Dynamic Characterization ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Unbiased Manner ◽  
Insight Into

Focused on high-temperature (200°C) operation, this paper seeks to provide insight into state-of-the-art 1.2 kV silicon carbide (SiC) power semiconductor devices; namely the MOSFET, BJT, SJT, and normally-off JFET. This is accomplished by characterizing and comparing the latest generation of these wide bandgap devices from various manufacturers (Cree, GE, ROHM, Fairchild, GeneSiC, and SemiSouth). To carry out this study, the static and dynamic characterization of each device is performed under increasing temperatures (25–200°C). Accordingly, this paper describes the experimental setup used and the different measurements conducted, which include: threshold voltage, current gain, specific on-resistance, and the turn-on and turn-off switching energies of the devices. The driving method used for each device is also detailed. Key trends and observations are reported in an unbiased manner throughout the paper and summarized in the conclusion.

Modeling of Wide Bandgap Power Semiconductor Devices—Part I

2015 ◽  
Vol 62 (2) ◽  
pp. 423-433 ◽  
Author(s):  
Homer Alan Mantooth ◽  
Kang Peng ◽  
Enrico Santi ◽  
Jerry L. Hudgins
Keyword(s):  
Semiconductor Devices ◽  
Wide Bandgap ◽  
Power Semiconductor ◽  
Power Semiconductor Devices

High-Temperature Characterization and Comparison of 1.2 kV SiC Power Semiconductor Devices

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000082-000087 ◽  
Author(s):  
Christina DiMarino ◽  
Zheng Chen ◽  
Dushan Boroyevich ◽  
Rolando Burgos ◽  
Paolo Mattavelli
Keyword(s):  
High Temperature ◽  
Semiconductor Devices ◽  
Wide Bandgap ◽  
Current Gain ◽  
Dynamic Characterization ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Unbiased Manner ◽  
Insight Into

Focused on high-temperature (200 °C) operation, this paper seeks to provide insight into state-of-the-art 1.2 kV Silicon Carbide (SiC) power semiconductor devices; namely the MOSFET, BJT, SJT, and normally-off JFET. This is accomplished by characterizing and comparing the latest generation of these wide bandgap devices from various manufacturers (Cree, GE, Rohm, Fairchild, GeneSiC, and SemiSouth). To carry out this study, the static and dynamic characterization of each device is performed under increasing temperatures (25–200 °C). Accordingly, this paper describes the experimental setup used and the different measurements conducted, which include: threshold voltage, current gain, specific on-resistance, and the turn-on and turn-off switching energies of the devices. The driving method used for each device is also detailed. Key trends and observations are reported in an unbiased manner throughout the paper and summarized in the conclusion.

Modeling of Wide-Bandgap Power Semiconductor Devices—Part II

2015 ◽  
Vol 62 (2) ◽  
pp. 434-442 ◽  
Author(s):  
Enrico Santi ◽  
Kang Peng ◽  
Homer Alan Mantooth ◽  
Jerry L. Hudgins
Keyword(s):  
Semiconductor Devices ◽  
Wide Bandgap ◽  
Power Semiconductor ◽  
Power Semiconductor Devices
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