CW ruby laser pumped by an argon ion laser

1977 ◽  
Vol 13 (10) ◽  
pp. 808-809 ◽  
Author(s):  
M. Birnbaum ◽  
A. Tucker ◽  
C. Fincher
Keyword(s):  
Ruby Laser ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

Stimulated scattering and induced Bragg reflexion of light in liquid media. II. Experimental

1973 ◽  
Vol 334 (1597) ◽  
pp. 215-229 ◽  
Keyword(s):  
Dielectric Constant ◽  
Ruby Laser ◽  
Liquid Media ◽  
Stimulated Scattering ◽  
Comprehensive Investigation ◽  
Novel Technique ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Temporal And Spatial ◽  
Argon Ion

A novel technique for the investigation of stimulated scattering in liquid media is described. Bragg reflexion of the light of a continuous argon ion laser has been used to analyse the modulations of dielectric constant generated in liquid media by stimulated scattering of the light of a Q-switched ruby laser. The results obtained indicate that this technique allows a comprehensive investigation of the scattering phenomenon and is particularly suitable for studying the temporal and spatial variations of the modulations.

The ruby laser: Pumped by a pulsed argon ion laser

1968 ◽  
Vol 4 (5) ◽  
pp. 392-392
Author(s):  
M. Birnbaum ◽  
C. Fincher
Keyword(s):  
Ruby Laser ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

THE RUBY LASER: PUMPED BY A PULSED ARGON ION LASER

1968 ◽  
Vol 12 (7) ◽  
pp. 225-227 ◽  
Author(s):  
Milton Birnbaum ◽  
Curtis L. Fincher
Keyword(s):  
Ruby Laser ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

Laser Induced Etching for Generation of Si Nanocrystals and Spectroscopic Investigation of Morphology

2005 ◽  
Vol 23 ◽  
pp. 43-46
Author(s):  
H.S. Mavi ◽  
S. Rath ◽  
Arun Shukla
Keyword(s):  
Quantum Confinement ◽  
Silicon Nanocrystals ◽  
Laser Wavelength ◽  
Interconnected Network ◽  
Substrate Type ◽  
Argon Ion Laser ◽  
Si Nanocrystals ◽  
Ion Laser ◽  
Laser Induced Etching ◽  
Argon Ion

Laser-induced etching of silicon is used to generate silicon nanocrystals. The pore structure depends on the substrate type and etching laser wavelength. Porous silicon (PS) samples prepared by Nd:YAG laser (1.16 eV) etching of n-type substrate showed a fairly uniform and highly interconnected network of nearly circular pores separated by thin columnar boundaries, while no circular pits were produced by argon- ion laser (2.41 eV) etching under similar conditions. The size and size distribution of the nanocrystals are investigated by Raman and photoluminescence spectroscopies and analyzed within the framework of quantum confinement models.

Electron temperatures in a segmented-metal argon-ion laser

1972 ◽  
Vol 5 (10) ◽  
pp. 1807-1814 ◽  
Author(s):  
A Maitland ◽  
J C L Cornish
Keyword(s):  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

scholarly journals Spectroscopic Properties of Photoproduct of Hematoporphyrin Derivative Oligomer by Photoradiation of Argon-ion Laser

1988 ◽  
Vol 8 (4) ◽  
pp. 3-9
Author(s):  
Norio MIYOSHI ◽  
Takahiro SEKI ◽  
Shuichi KINOSHITA ◽  
Takashi KUSHIDA ◽  
Tsuyoshi NISHIZAKA ◽  
...  
Keyword(s):  
Spectroscopic Properties ◽  
Hematoporphyrin Derivative ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion
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