Dilute-As InGaNAs/GaN Quantum Wells for High-Efficiency Red Emitters

2022 ◽  
pp. 1-1
Author(s):  
Wei Sun ◽  
Hanlin Fu ◽  
Damir Borovac ◽  
Justin C. Goodrich ◽  
Chee-Keong Tan ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Efficiency

High-efficiency electron-beam-pumped sub-240-nm ultraviolet emitters based on ultra-thin GaN/AlN multiple quantum wells grown by plasma-assisted molecular-beam epitaxy on c-Al2O3

2018 ◽  
Vol 11 (9) ◽  
pp. 091003 ◽  
Author(s):  
Valentin N. Jmerik ◽  
Dmitrii V. Nechaev ◽  
Alexey A. Toropov ◽  
Evgenii A. Evropeitsev ◽  
Vladimir I. Kozlovsky ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
High Efficiency ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

scholarly journals Record High External Quantum Efficiency of 19.2% Achieved in Light-Emitting Diodes of Colloidal Quantum Wells Enabled by Hot-Injection Shell Growth

2019 ◽  
Author(s):  
Baiquan Liu ◽  
Yemliha Altintas ◽  
Lin Wang ◽  
Sushant Shendre ◽  
Manoj Sharma ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Performance ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Shell Growth ◽  
Light Emitting ◽  
Hot Injection ◽  
Key Factor

<p> Colloidal quantum wells (CQWs) are regarded as a new, highly promising class of optoelectronic materials thanks to their unique excitonic characteristics of high extinction coefficient and ultranarrow emission bandwidth. Although the exploration of CQWs in light-emitting diodes (LEDs) is impressive, the performance of CQW-LEDs lags far behind compared with other types of LEDs (e.g., organic LEDs, colloidal quantum-dot LEDs, and perovskite LEDs). Herein, for the first time, the authors show high-efficiency CQW-LEDs reaching close to the theoretical limit. A key factor for this high performance is the exploitation of hot-injection shell (HIS) growth of CQWs, which enables a near-unity photoluminescence quantum yield (PLQY), reduces nonradiative channels, ensures smooth films and enhances the stability. Remarkably, the PLQY remains 95% in solution and 87% in film despite rigorous cleaning. Through systematically understanding their shape-, composition- and device- engineering, the CQW-LEDs using CdSe/Cd<sub>0.25</sub>Zn<sub>0.75</sub>S core/HIS CQWs exhibit a maximum external quantum efficiency of 19.2%. Additionally, a high luminance of 23,490 cd m<sup>-2</sup>, extremely saturated red color with the Commission Internationale de L’Eclairage coordinates of (0.715, 0.283) and stable emission are obtained. The findings indicate that HIS grown CQWs enable high-performance solution-processed LEDs, which may pave the path for CQW-based display and lighting technologies.</p>

High-efficiency near-UV light-emitting diodes on Si substrates with InGaN/GaN/AlGaN/GaN multiple quantum wells

2020 ◽  
Vol 8 (3) ◽  
pp. 883-888 ◽  
Author(s):  
Yuan Li ◽  
Zhiheng Xing ◽  
Yulin Zheng ◽  
Xin Tang ◽  
Wentong Xie ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Multiple Quantum ◽  
High Quantum Efficiency ◽  
Light Emitting ◽  
Si Substrates

High quantum efficiency LEDs with InGaN/GaN/AlGaN/GaN MQWs have been demonstrated. The proposed GaN interlayer barrier can not only increase the concentration and the spatial overlap of carriers, but also improve the quality of the MQWs.

Realization of high efficiency AlGaN-based multiple quantum wells grown on nano-patterned sapphire substrates

CrystEngComm ◽  
2020 ◽  
Author(s):  
Yuanhao Sun ◽  
Fujun Xu ◽  
Na Zhang ◽  
Jing Lang ◽  
Jiaming Wang ◽  
...  
Keyword(s):  
Critical Temperature ◽  
Quantum Wells ◽  
High Efficiency ◽  
Growth Conditions ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

Growth of AlGaN-based multiple quantum wells (MQWs) has been attempted on nano-patterned sapphire substrates (NPSSs). By adopting a critical-temperature approach and optimizing the growth conditions of V/III ratio and Si...

Quantum wells for high-efficiency photovoltaics

2016 ◽  
Author(s):  
Diego Alonso-Álvarez ◽  
Nicholas Ekins-Daukes
Keyword(s):  
Quantum Wells ◽  
High Efficiency

LASER-INDUCED ADIABATIC POPULATION TRANSFER IN ASYMMETRIC QUANTUM WELLS

NANO ◽  
2009 ◽  
Vol 04 (05) ◽  
pp. 289-297
Author(s):  
MONICA GAMBHIR ◽  
SIDDHARTHA LAHON ◽  
PRADEEP KUMAR JHA ◽  
MAN MOHAN
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
High Efficiency ◽  
Proper Time ◽  
Logic Gates ◽  
Double Quantum ◽  
Population Transfer ◽  
Quantum Logic Gates ◽  
Double Quantum Well ◽  
The Impact

The basic technique of stimulated Raman adiabatic passage for laser-induced adiabatic population transfer between discrete quantum states of an asymmetric double quantum well has been used in our study. The results show that the proper time-delay, overlap, and detuning of two pulses allows the coherent transfer between the states of a double quantum well system, leading to the possibility of implementation of semiconductor–based quantum logic gates and high efficiency optical switches. The impact of phase relaxation on the population transfer efficiency is also studied.

Potentially modulated multi-quantum wells for high-efficiency solar cell applications

2005 ◽  
Vol 85 (2) ◽  
pp. 143-152 ◽  
Author(s):  
Yoshitaka Okada ◽  
Naoyuki Shiotsuka ◽  
Toru Takeda
Keyword(s):  
Solar Cell ◽  
Quantum Wells ◽  
High Efficiency

InGaAs/GaAsP quantum wells and wires for high-efficiency photovoltaic applications

2016 ◽  
Author(s):  
Masakazu Sugiyama ◽  
Hirofumi Cho ◽  
Toprasertpong Kasidit ◽  
Hassanet Sodabanlu ◽  
Kentaroh Watanabe ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Efficiency ◽  
Photovoltaic Applications
Sign in / Sign up

Export Citation Format

Share Document