Characterization of a low-loss and wide-band (DC to 170 GHz) flip-chip interconnect on an organic substrate

Author(s):  
Wasif Tanveer Khan ◽  
A. Cagri Ulusoy ◽  
Robert L. Schmid ◽  
John Papapolymerou
Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.


Author(s):  
Andrew J. Komrowski ◽  
N. S. Somcio ◽  
Daniel J. D. Sullivan ◽  
Charles R. Silvis ◽  
Luis Curiel ◽  
...  

Abstract The use of flip chip technology inside component packaging, so called flip chip in package (FCIP), is an increasingly common package type in the semiconductor industry because of high pin-counts, performance and reliability. Sample preparation methods and flows which enable physical failure analysis (PFA) of FCIP are thus in demand to characterize defects in die with these package types. As interconnect metallization schemes become more dense and complex, access to the backside silicon of a functional device also becomes important for fault isolation test purposes. To address these requirements, a detailed PFA flow is described which chronicles the sample preparation methods necessary to isolate a physical defect in the die of an organic-substrate FCIP.


2013 ◽  
Vol 28 (6) ◽  
pp. 671-676 ◽  
Author(s):  
Yu-Qing ZHANG ◽  
Li-Li ZHAO ◽  
Shi-Long XU ◽  
Chao ZHANG ◽  
Xiao-Ying CHEN ◽  
...  

2007 ◽  
Vol 54 (2) ◽  
pp. 86-92
Author(s):  
Kazutomo Abe ◽  
Naoto Kitahara ◽  
Daiju Sugiyama ◽  
Fumiko Morifuji ◽  
Mikio Higuchi ◽  
...  

2018 ◽  
Vol 0 (0) ◽  
Author(s):  
Mohammad Rakibul Islam ◽  
Md. Arif Hossain ◽  
Syed Iftekhar Ali ◽  
Jakeya Sultana ◽  
Md. Saiful Islam

AbstractA novel photonic crystal fiber (PCF) based on TOPAS, consisting only rectangular slots is presented and analyzed in this paper. The PCF promises not only an extremely low effective material loss (EML) but also a flattened dispersion over a broad frequency range. The modal characteristics of the proposed fiber have been thoroughly investigated using finite element method. The fiber confirms a low EML of 0.009 to 0.01 cm−1 in the frequency range of 0.77–1.05 THz and a flattened dispersion of 0.22±0.01 ps/THz/cm. Besides, some other significant characteristics like birefringence, single mode operation and confinement loss have also been inspected. The simplicity of the fiber makes it easily realizable using the existing fabrication technologies. Thus it is anticipated that the new fiber has the potential to ensure polarization preserving transmission of terahertz signals and to serve as an efficient medium in the terahertz frequency range.


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