Characterization of Pd-nanocrystal-based nonvolatile memory devices

2006 ◽  
Author(s):  
Kwang Soo Seol ◽  
Seong Jae Choi ◽  
Jae-Young C ◽  
Eun-Joo Jang ◽  
Byung-Ki Kim ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Memory Devices ◽  
Nonvolatile Memory Devices

scholarly journals Applications of Focus Ion Beam Technique in the Characterization of Nanocrystal Nonvolatile Memory Devices

2013 ◽  
Vol 19 (S2) ◽  
pp. 888-889
Author(s):  
J.-G. Zheng
Keyword(s):  
Nonvolatile Memory ◽  
Ion Beam ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
Focus Ion Beam ◽  
Beam Technique

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

Characterization of CoxNiyO hybrid metal oxide nanoparticles as charge trapping nodes in nonvolatile memory devices

2008 ◽  
Vol 52 (10) ◽  
pp. 1530-1535 ◽  
Author(s):  
Chin-Lung Cheng ◽  
Chien-Wei Liu ◽  
Kuei-Shu Chang-Liao ◽  
Ping-Hung Tsai ◽  
Jin-Tsong Jeng ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Nonvolatile Memory ◽  
Metal Oxide Nanoparticles ◽  
Charge Trapping ◽  
Oxide Nanoparticles ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
Hybrid Metal Oxide

Fabrication of YMnO3 Films: New Candidate for Non-Volatile Memory Devices

1996 ◽  
Vol 433 ◽  
Author(s):  
Norifumi Fujimura ◽  
Tadashi Ishida ◽  
Takeshi Yoshimura ◽  
Taichiro Ito
Keyword(s):  
Nonvolatile Memory ◽  
Valence Electron ◽  
Bottom Electrode ◽  
Rf Magnetron Sputtering ◽  
Film Deposition ◽  
Deposition Condition ◽  
Memory Devices ◽  
Non Volatile Memory ◽  
Nonvolatile Memory Devices ◽  
First Time

AbstractWe have proposed ReMnO3 (Re:rare earth) thin films, as a new candidate for nonvolatile memory devices. In this paper, we try to fabricate (0001) oriented YMnO3 films on (111)MgO, (0001)ZnO:Al/(0001) sapphire and (111)Pt/(111)MgO using rf magnetron sputtering. We succeed in obtaining (0001) epitaxial YMnO3 films on (111) MgO and (0001)ZnO:Al/(0001)sapphire substrate, and polycrystalline films on (111)Pt/(1 11)MgO for the first time. Electrical property of the bottom electrode (ZnO:Al) changes with varying the deposition condition of YMnO3 films. However, we find an optimum deposition condition of ZnO:Al film such that it functions as a bottom electrode even after YMnO3 film deposition. The dielectric properties of the epitaxial and polycrystalline YMnO3 films are almost the same. The YMnO3 films show leaky electrical properties. This may be caused by a change in the valence electron of Mn from 3+.

Nonvolatile memory devices with Cu2S and Cu-Pc bilayered films

2007 ◽  
Vol 91 (7) ◽  
pp. 073511 ◽  
Author(s):  
Liang Chen ◽  
Yidong Xia ◽  
Xuefei Liang ◽  
Kuibo Yin ◽  
Jiang Yin ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Memory Devices ◽  
Nonvolatile Memory Devices
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