A 8-Channels Low-Noise CMOS Readout Circuit for Silicon Detectors with on-Chip Front-End JFET

2006 ◽  
Author(s):  
C. Fiorini ◽  
M. Porro ◽  
T. Frizzi
Keyword(s):  
Low Noise ◽  
Readout Circuit ◽  
Silicon Detectors ◽  
Front End ◽  
On Chip

Low noise 4-channel front end ASIC with on-chip DLL for the upgrade of the LHCb Calorimeter

2015 ◽  
Vol 10 (04) ◽  
pp. C04017-C04017 ◽  
Author(s):  
E. Picatoste ◽  
C. Bigbeder-Beau ◽  
O. Duarte ◽  
L. Garrido ◽  
D. Gascon ◽  
...  
Keyword(s):  
Low Noise ◽  
Front End ◽  
On Chip

A 160-GHz low-noise downconversion receiver front-end in a SiGe HBT technology

2011 ◽  
Vol 3 (3) ◽  
pp. 347-353 ◽  
Author(s):  
Erik Öjefors ◽  
Franck Pourchon ◽  
Pascal Chevalier ◽  
Ullrich R. Pfeiffer
Keyword(s):  
Noise Figure ◽  
Intermediate Frequency ◽  
Low Noise ◽  
Sige Hbt ◽  
Millimeter Wave Imaging ◽  
Fully Differential ◽  
Front End ◽  
Wave Imaging ◽  
Noise Amplifier ◽  
On Chip

A 160-GHz SiGe-HBT (Heterojunction Bipolar Transistor) down-conversion receiver front-end for use in active millimeter-wave imaging arrays and D-band communication applications is presented. The monolithic front-end consists of a three-stage low-noise amplifier providing 24 dB of gain and a Gilbert-cell mixer capable of operating from a −8-dBm LO signal. A fully differential architecture compatible with balanced on or off-chip antennas is used to avoid the need for on-chip baluns in antenna-integrated applications. The implemented downconversion front-end consumes 50 mA from a 3.3 V supply and requires a 0.1 mm2 die area (excl. pads) per channel. With a 160-GHz input signal and an Intermediate Frequency (IF) of 1 GHz, the implemented front-end yields a 25-dB conversion gain, a −30-dBm input compression point, and a 9-dB/7-dB (with/without auxiliary on-chip input balun) system noise figure.

scholarly journals Design of a Low-Noise Front-End Readout Circuit for CdZnTe Detectors

2013 ◽  
Vol 04 (02) ◽  
pp. 123-128 ◽  
Author(s):  
Bo Gan ◽  
Tingcun Wei ◽  
Wu Gao ◽  
Huiming Zeng ◽  
Yann Hu
Keyword(s):  
Low Noise ◽  
Readout Circuit ◽  
Front End ◽  
Cdznte Detectors

A Low Power and Low Noise On-Chip Active RF Tracking Filter for Digital TV Tuner ICs

2011 ◽  
Vol E94-C (10) ◽  
pp. 1698-1701
Author(s):  
Yang SUN ◽  
Chang-Jin JEONG ◽  
In-Young LEE ◽  
Sang-Gug LEE
Keyword(s):  
Low Power ◽  
Digital Tv ◽  
Low Noise ◽  
On Chip ◽  
Tracking Filter

scholarly journals A Tri-Band Cooled Receiver for Geodetic VLBI

Sensors ◽  
2021 ◽  
Vol 21 (8) ◽  
pp. 2662
Author(s):  
José A. López-Pérez ◽  
Félix Tercero-Martínez ◽  
José M. Serna-Puente ◽  
Beatriz Vaquero-Jiménez ◽  
María Patino-Esteban ◽  
...  
Keyword(s):  
Very Long Baseline Interferometry ◽  
Low Noise ◽  
Cryogenic Temperatures ◽  
Geospatial Information ◽  
Receiver Noise ◽  
Geodetic Vlbi ◽  
Long Baseline ◽  
Front End ◽  
X Band ◽  
Santa Maria

This paper shows a simultaneous tri-band (S: 2.2–2.7 GHz, X: 7.5–9 GHz and Ka: 28–33 GHz) low-noise cryogenic receiver for geodetic Very Long Baseline Interferometry (geo-VLBI) which has been developed at Yebes Observatory laboratories in Spain. A special feature is that the whole receiver front-end is fully coolable down to cryogenic temperatures to minimize receiver noise. It was installed in the first radio telescope of the Red Atlántica de Estaciones Geodinámicas y Espaciales (RAEGE) project, which is located in Yebes Observatory, in the frame of the VLBI Global Observing System (VGOS). After this, the receiver was borrowed by the Norwegian Mapping Autorithy (NMA) for the commissioning of two VGOS radiotelescopes in Svalbard (Norway). A second identical receiver was built for the Ishioka VGOS station of the Geospatial Information Authority (GSI) of Japan, and a third one for the second RAEGE VGOS station, located in Santa María (Açores Archipelago, Portugal). The average receiver noise temperatures are 21, 23, and 25 Kelvin and the measured antenna efficiencies are 70%, 75%, and 60% in S-band, X-band, and Ka-band, respectively.

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