Analytical Performance of Low Noise Amplifier Using Single-Stage Configuration for ADS-B Receiver

Automatic dependent surveillance-broadcast (ADS-B) is an equipment of a radar system to reach difficult areas. For radar applications, an ADS-B requires a low noise amplifier (LNA) with high gain, stability, and a low noise figure. In this research, to produce an LNA with good performance, an LNA was designed using a BJT transistor 2SC5006 with DC bias, VCE = 3 V, and current Ic = 10 mA, also a DC supply with VCC = 12 V, to achieve a high gain with a low noise figure. The initial LNA impedance circuit was simulated using 2 elements and then converted into 3 elements to obtain parameters according to the target specification through the tuning process, impedance matching circuit was used to reduce return loss and voltage standing wave ratio (VSWR) values. The LNA sequence obtains the working frequency of 1090 MHz, return loss of -52.103 dB, a gain of 10.382, VSWR of 1.005, a noise figure of 0.552, stability factor of 0.997, and bandwidth of 83 MHz. From the simulation results, the LNA has been successfully designed according to the ADS-B receiver specifications.

A photoreceiver with an integrated X-band low-noise amplifier

The paper presents development results for a photodetector module with an integrated lownoise amplifier. The photodetector is based on a commercial indium-phosphide photodiode and a custom-designed adapter board and allows to use an optical carrier with wavelengths of 1.31 and 1.55 μm and performs optoelectronic conversion for electrical signals into 0–50 GHz range. The developed gallium arsenide low-noise amplifier is used to compensate photodiode conversion loss in the X-band frequency range. The photodetector module is intended for use as a microwave photonic link receiver, which provides a significant extension of the signal transmission range in comparison with classical types of transmission lines

A Wideband Noise and Harmonic Distortion Canceling Low-Noise Amplifier for High-Frequency Ultrasound Transducers

This paper presents a wideband low-noise amplifier (LNA) front-end with noise and distortion cancellation for high-frequency ultrasound transducers. The LNA employs a resistive shunt-feedback structure with a feedforward noise-canceling technique to accomplish both wideband impedance matching and low noise performance. A complementary CMOS topology was also developed to cancel out the second-order harmonic distortion and enhance the amplifier linearity. A high-frequency ultrasound (HFUS) and photoacoustic (PA) imaging front-end, including the proposed LNA and a variable gain amplifier (VGA), was designed and fabricated in a 180 nm CMOS process. At 80 MHz, the front-end achieves an input-referred noise density of 1.36 nV/sqrt (Hz), an input return loss (S11) of better than −16 dB, a voltage gain of 37 dB, and a total harmonic distortion (THD) of −55 dBc while dissipating a power of 37 mW, leading to a noise efficiency factor (NEF) of 2.66.

Experimental Validation for Moving Particle Detection Using Acoustic Emission Method

Gas-insulated switchgears (GISs) are important pieces of power equipment used to improve the reliability of power facilities. As the number of GISs increases, more insulation failures occur every year. The most common cause of insulation failure is particles and foreign bodies producing a partial discharge (PD), which causes deterioration of the insulation materials and results in insulation breakdown. However, it is not easy to detect them by conventional PD and ultra-high frequency (UHF) PD measurements because it is difficult to apply the conventional method to the GISs in service, and the UHF method is not always applicable to GISs. Therefore, an appropriate method to detect particles and foreign bodies in GISs is needed. In this study, experimental validation was performed to detect particles moving in GISs using the acoustic emission (AE) method. Acoustic wave signals were produced by the particles moving on the surface of a flat plate when applying voltage. An AE sensor with a frequency range of 50 to 400 kHz was used, and a decoupler and low-noise amplifier were designed to detect the acoustic wave signals with high sensitivity. Twelve types of particles were used, and one was selected to confirm the detectable minimum output voltage. In an actual factory test, the output voltage of the acoustic wave signals was analyzed while considering the applied voltage and signal attenuation. Consequently, it was confirmed that the AE measuring system proposed in this paper could detect particles moving inside GISs.

Single Event Effect Analysis of SiGe Low Noise Amplifier

This paper analyzes the single event transient (SET) response of low noise amplifier (LNA) designed using SiGe heterojunction bipolar transistors (HBT). To verify the radiation tolerance of the proposed LNA, a total of four cascode configurations were designed. Comprehensive mixed-mode simulations were performed to evaluate the SET susceptibility of considered LNA cascode configurations, and we have analyzed how the strike parameters affect their output response. In this fact the strike position, linear energy transfer (LET), and track radius, were varied, and the resulting transients were compared for the different LNA configurations. Through this study, the potential capability of the inverse mode SiGe heterojunction bipolar transistor (HBT) in LNA radiation tolerance was confirmed for various strike operating conditions. It has been demonstrated that the single event sensitivity was reduced for LNA employing inverse mode SiGe HBT for strike device. The strike influence on the different LNA configurations response depends on strike LET, where a reduced SET variation is observed for high LET.

A 1.8 to 4 GHz inductor-less highly linear CMOS LNA for wire-less receivers

This paper presents an inductor-less wide-band highly linear low-noise amplifier (LNA) for wire-less receivers. The inductor-less LNA consists of a complementary current-reuse common source amplifier combined with a low-current active feedback to obtain wide range input impedance matching and low noise figure. In our LNA, a degeneration resistor is utilized to improve linearity of the LNA. Furthermore, we designed a bypass mode for the LNA to extend the range of its applications. The proposed LNA is implemented in 28 nm CMOS process. It has a gain of 14.9 dB and a bandwidth of 2.2 GHz. The noise figure (NF) is 1.95 dB and the third-order input intercept point (IIP3) is 24.8 dBm at 2.3 GHz. It consumes 17.2 mW at a 0.9-V supply and has an area of 0.011 mm2.

A 20–44 GHz Wideband LNA Design Using the SiGe Technology for 5G Millimeter-Wave Applications

This paper presents the design and implementation of a low-noise amplifier (LNA) for millimeter-wave (mm-Wave) 5G wireless applications. The LNA was based on a common-emitter configuration with cascode amplifier topology using an IHP’s 0.13 μm Silicon Germanium (SiGe) heterojunction bipolar transistor (HBT) whose f_T/f_MAX/gate-delay is 360/450 GHz/2.0 ps, utilizing transmission lines for simultaneous noise and input matching. A noise figure of 3.02–3.4 dB was obtained for the entire wide bandwidth from 20 to 44 GHz. The designed LNA exhibited a gain (S_21) greater than 20 dB across the 20–44 GHz frequency range and dissipated 9.6 mW power from a 1.2 V supply. The input reflection coefficient (S_11) and output reflection coefficient (S_22) were below −10 dB, and reverse isolation (S_12) was below −55 dB for the 20–44 GHz frequency band. The input 1 dB (P1dB) compression point of −18 dBm at 34.5 GHz was obtained. The proposed LNA occupies only a 0.715 mm2 area, with input and output RF (Radio Frequency) bond pads. To the authors’ knowledge, this work evidences the lowest noise figure, lowest power consumption with reasonable highest gain, and highest bandwidth attained so far at this frequency band in any silicon-based technology.