Hot carrier injection and negative bias temperature instability induced NMOS and PMOS degradation on CMOS Ring Oscillator

2016 ◽  
Author(s):  
Insaf Lahbib ◽  
Mohamed Aziz Doukkali ◽  
Patrick Martin ◽  
Guy Imbert
Keyword(s):  
Ring Oscillator ◽  
Negative Bias ◽  
Carrier Injection ◽  
Negative Bias Temperature Instability ◽  
Temperature Instability ◽  
Hot Carrier ◽  
Bias Temperature Instability ◽  
Hot Carrier Injection

scholarly journals 3.3V Transmitter Using 1.8V Transistors In A Cascode Configuration

2021 ◽  
Author(s):  
Marcs Ng
Keyword(s):  
Integrated Circuits ◽  
Transmission Rate ◽  
Carrier Injection ◽  
Digital Integrated Circuits ◽  
Negative Bias Temperature Instability ◽  
Hot Carrier ◽  
Bias Temperature Instability ◽  
Hot Carrier Injection ◽  
Capacitive Load ◽  
Ac Transmission

A voltage-mode transmitter using a 1.8V-to-3.3V levelshifter and cascoded output buffer is proposed. 1.8V TSMC 65nm transistors are used. The design is targeted to meet JEDEC Interface Standard for Nominal 3 V/3.3 V Supply Digital Integrated Circuits DC Specifications as well as an AC transmission rate of 200 MHz on a 30 cm 50Ω board trace terminated with a 4 pF capacitive load. Overstress voltages will not be exceeded in order to avoid device failure due to breaching Gate Oxide Integrity, Hot Carrier Injection, or Negative Bias Temperature Instability.

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